FR10B [THINKISEMI]

10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes;


型号：	FR10B
厂家：	Thinki Semiconductor Co., Ltd.
描述：	10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes
文件：	总2页 (文件大小：521K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FR10A thru FR10M

Pb Free Plating Product

10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes

Unit:inch(millimeter)

Features

OUTLINE

ꢀ

For surface mounted application

Low profile package

Cathode Band

Built-in strain relief

Ideal for automated placement

Easy pick and place

Fast recovery time for high efficiency

Plastic material used carries Underwriters

Laboratory Classification 94V-0

ꢀ

DIMENSIONS

INCHES

MIN

Mechanical Data

DIM

MAX

.214

0.203

0.005

0.02

0.056

0 .179

0.322

0.243

0.240

MIN

5.08

4.70

0.05

---

1.20

4.27

7.85

6.08

5.95

MAX

5.43

5.30

0.13

0.51

1.42

4.55

8.18

6.18

6.10

NOTE

.200

.177

Cases: HSMC(Round Lead)/SME Pkg

ꢀ

0.002

---

0.047

0.168

0.309

0.239

0.234

ꢀ

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Packing: Tape&Reel

HSMC/SMC-W/SMCE

Weight: 0.093 gram approximately

Maximum Ratings and Electrical Characteristics

Rating at 25

ambient temperature unless otherwise specified.

℃

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Type Number

FS10A FS10B FS10D FS10G FS10J FS10K FS10M

Units

Maximum Recurrent Peak Reverse

Voltage

V_RRM

100

200 400

600 800 1000

420 560 700

600 800 1000

Maximum RMS Voltage

140 280

200 400

V_RMS

V_DC

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified

Current See Fig. 1

10.0

300

1.3

I_(AV)

I_FSM

V_F

Peak Forward Surge Current, 8.3 ms

Single Half Sine-wave Superimposed on

Rated Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@ 8.0A

Maximum DC Reverse Current

@T_A=25 C at Rated DC Blocking Voltage

I_R

@ T_A=100 C

Maximum Reverse Recovery Time

( Note 1 )

Trr

150

250

500

Typical Junction Capacitance ( Note 2 )

Maximum Thermal Resistance (Note 3)

R_θJA

℃/W

θJL

Operating Temperature Range

Storage Temperature Range

℃

T_J

-55 to +150

T^STG

1. Reverse Recovery Test Conditions: I^F=0.5A, I^R=1.0A, I^RR=0.25A

2. Measured at 1 MHz and Applied V^R=4.0 Volts

Notes:

3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas

Page 1/2

http://www.thinkisemi.com/

Rev.07C

FR10A thru FR10M

FIG.1- MAXIMUM FORWARD CURRENT DERATING

CURVE

FIG.2- TYPICAL REVERSE CHARACTERISTICS

1000

10.0

RESISTIVE OR

INDUCTIVE LOAD

0.4X0.4"(10X10mm)

COPPER PAD AREAS

100

8.0

4.0

Tj=125⁰C

Tj=85⁰C

Tj=25⁰C

LEAD TEMPERATURE. (^oC)

150

0.1

FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

300

8.3ms Single Half Sine Wave

(JEDEC Method) at TL=120^oC

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

150

FIG.5- TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

Tj=25⁰C

PULSE WIDTH-300

1% DUTY CYCLE

100

NUMBER OF CYCLES AT 60Hz

FIG.4- TYPICAL JUNCTION CAPACITANCE

Tj=25⁰C

f=1.0MHz

Vsig=50mVp-p

0.1

0.01

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

REVERSE VOLTAGE. (V)

FORWARD VOLTAGE. (V)

FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50W

NONINDUCTIVE

10W

NONINDUCTIVE

trr

+0.5A

(-)

DUT

(+)

PULSE

GENERATOR

(NOTE 2)

50Vdc

(approx)

(-)

-0.25A

OSCILLOSCOPE

(NOTE 1)

(+)

NON

INDUCTIVE

-1.0A

NOTES: 1. Rise Time=7ns max. Input Impedance=

1 megohm 22pf

1cm

SET TIME BASE FOR

5/ 10ns/ cm

2. Rise Time=10ns max. Sourse Impedance=

50 ohms

Page 2/2

http://www.thinkisemi.com/

Rev.07C

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