FR10B [THINKISEMI]

10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes;
FR10B
型号: FR10B
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes

文件: 总2页 (文件大小:521K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FR10A thru FR10M  
FR10A thru FR10M  
Pb Free Plating Product  
10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes  
Unit:inch(millimeter)  
Features  
OUTLINE  
For surface mounted application  
H
Low profile package  
Cathode Band  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
J
Fast recovery time for high efficiency  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
A
C
E
D
B
F
G
DIMENSIONS  
INCHES  
MIN  
MM  
Mechanical Data  
DIM  
A
B
C
D
E
MAX  
.214  
0
0.203  
0.005  
0.02  
0.056  
0 .179  
0.322  
0.243  
0.240  
MIN  
5.08  
4.70  
0.05  
---  
1.20  
4.27  
7.85  
6.08  
5.95  
MAX  
5.43  
5.30  
0.13  
0.51  
1.42  
4.55  
8.18  
6.18  
6.10  
NOTE  
.200  
0
.177  
0
Cases: HSMC(Round Lead)/SME Pkg  
0.002  
---  
0.047  
0.168  
0.309  
0.239  
0.234  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Packing: Tape&Reel  
F
G
H
J
HSMC/SMC-W/SMCE  
Weight: 0.093 gram approximately  
Maximum Ratings and Electrical Characteristics  
Rating at 25  
ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol  
Type Number  
FS10A FS10B FS10D FS10G FS10J FS10K FS10M  
Units  
Maximum Recurrent Peak Reverse  
Voltage  
VRRM  
50  
100  
200 400  
600 800 1000  
420 560 700  
600 800 1000  
V
Maximum RMS Voltage  
35  
50  
70  
140 280  
200 400  
V
V
VRMS  
VDC  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified  
Current See Fig. 1  
10.0  
300  
1.3  
A
A
V
I(AV)  
IFSM  
VF  
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
Maximum Instantaneous Forward Voltage  
@ 8.0A  
Maximum DC Reverse Current  
o
10  
50  
uA  
uA  
@TA =25 C at Rated DC Blocking Voltage  
o
IR  
@ TA=100 C  
Maximum Reverse Recovery Time  
( Note 1 )  
Trr  
nS  
150  
45  
250  
30  
500  
pF  
Typical Junction Capacitance ( Note 2 )  
Cj  
Maximum Thermal Resistance (Note 3)  
RθJA  
75  
20  
℃/W  
R
θJL  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
-55 to +150  
TSTG  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas  
Page 1/2  
http://www.thinkisemi.com/  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
FR10A thru FR10M  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.2- TYPICAL REVERSE CHARACTERISTICS  
1000  
10.0  
RESISTIVE OR  
INDUCTIVE LOAD  
0.4X0.4"(10X10mm)  
COPPER PAD AREAS  
100  
10  
8.0  
4.0  
Tj=1250C  
Tj=850C  
1
Tj=250C  
0
55  
LEAD TEMPERATURE. (oC)  
150  
0.1  
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
300  
8.3ms Single Half Sine Wave  
(JEDEC Method) at TL=120oC  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
150  
FIG.5- TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
60  
10  
Tj=250C  
PULSE WIDTH-300  
1% DUTY CYCLE  
S
0
100  
10  
1
NUMBER OF CYCLES AT 60Hz  
FIG.4- TYPICAL JUNCTION CAPACITANCE  
60  
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
1
50  
40  
30  
20  
0.1  
10  
0
0.01  
1
100  
0
10  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
REVERSE VOLTAGE. (V)  
FORWARD VOLTAGE. (V)  
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50W  
NONINDUCTIVE  
10W  
NONINDUCTIVE  
trr  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50Vdc  
(approx)  
(-)  
-0.25A  
1W  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
Page 2/2  
http://www.thinkisemi.com/  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  

相关型号:

FR10B-TP

Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, DO-214AB, PLASTIC, HSMC, 2 PIN
MCC

FR10B-TP-HF

Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, DO-214AB, HSMC, 2 PIN
MCC

FR10BP

DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, PLASTIC, HSMC, 2 PIN, Rectifier Diode
MCC

FR10C03CF

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C03CFA

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C03CFD

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C03CFS

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C04CF

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C04CFA

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C04CFD

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C04CFS

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI

FR10C05CF

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
THINKISEMI