FR10C03CFS [THINKISEMI]

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers;
FR10C03CFS
型号: FR10C03CFS
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers

文件: 总2页 (文件大小:327K)
中文:  中文翻译
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FR10C03CFA thru FR10C05CFA  
FR10C03CFA/FR10C04CFA/FR10C05CFA  
Pb Free Plating Product  
10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers  
ITO-220AB(TO-220F-3L)  
Unit:inch(mm)  
Features  
.189(4.8)  
.165(4.2)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
.1  
Case: Full Plastic Isolated Package ITO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
(2.55)  
(2.55)  
Case  
Case  
Case  
Case  
Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "CFD"  
Tandem Polarity  
Suffix "CFS"  
Common Cathode  
Suffix "CF"  
Common Anode  
Suffix "CFA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
FR10C03CF  
FR10C04CF  
FR10C05CF  
FR10C03CFA FR10C04CFA FR10C05CFA  
FR10C03CFD FR10C04CFD FR10C05CFD  
FR10C03CFS FR10C04CFS FR10C05CFS  
PARAMETER  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100°C  
10.0  
125  
1.3  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x5.0A=10.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
Maximum Instantaneous Forward Voltage  
@5.0A  
0.98  
1.7  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25°C  
At Rated DC Blocking Voltage @TJ=125°C  
5.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35  
65  
Trr  
CJ  
nS  
pF  
3.0  
RθJC  
°C/W  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
TJ,TSTG  
°C  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
FR10C03CFA thru FR10C05CFA  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
10.0  
125  
100  
75  
50  
25  
0
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
8.0  
6.0  
4.0  
2.0  
60 Hz Resistive or  
Inductive load  
0
0
50  
100  
150  
1
10  
100  
CASE TEMPERATURE, oC  
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
10  
1.0  
1000  
TJ=125oC  
100  
FR10C04CFA  
FR10C03CFA  
10  
FR10C05CFA  
0.1  
TJ=25oC  
1
TJ=25oC  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.01  
0.1  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
TJ = 25o  
C
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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