FMG34S [THINKISEMI]
20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode;
| 型号： | FMG34S |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode |
| 文件： | 总3页 (文件大小：601K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMG34S
FMG34S
Pb Free Plating Product
20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
TO-247AD/TO-3P
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
Anode
· Soft Recovery Characteristics
· Low Recovery Loss
Base Backside
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
FMG34S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
400
400
10
Unit
V
VR
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
VRRM
V
TC=110°C, Per Diode
A
IF(AV)
Average Forward Current
TC=110°C, Per Package
20
A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
TC=110°C, Per Diode
14
A
A
100
TJ=45°C, t=10ms, 50Hz, Sine
PD
83
W
°C
TJ
Junction Temperature
Storage Temperature Range
Module-to-Sink
-40 to +150
TSTG
Torque
RθJC
Weight
-40 to +150
°C
Recommended（M3）
1.1
1.5
6
N·m
°C /W
g
Thermal Resistance
Junction-to-Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
15
µA
VR=400V
--
--
--
--
--
--
--
--
--
--
--
IRM
Reverse Leakage Current
250
µA
VR=400V, TJ=125°C
IF=10A
1.00
0.87
20
--
--
--
--
--
--
--
V
V
VF
Forward Voltage
IF=10A, TJ=125°C
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
VR=200V, IF=10A
ns
ns
A
trr
Reverse Recovery Time
25
diF/dt=-200A/μs, TJ=25°C
IRRM
trr
Max. Reverse Recovery Current
Reverse Recovery Time
2.2
46
VR=200V, IF=10A
ns
A
diF/dt=-200A/μs, TJ=125°C
IRRM
Max. Reverse Recovery Current
5.5
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
FMG34S
20
16
12
8
70
60
50
40
30
20
10
0
VR=200V
TJ =125°C
IF=20A
TJ =125°C
IF=10A
IF=5A
TJ =25°C
4
0
0
0.50 0.75 1.00
1.50
0
200
400
600
800
1000
1.25
0.25
VF（V）
diF/dt（A/μs）
Fig1. Forward Voltage Drop vs Forward Current
Fig2. Reverse Recovery Time vs diF/dt
25
250
200
150
100
50
VR=200V
TJ =125°C
VR=200V
IF=20A
TJ =125°C
20
IF=20A
15
IF=10A
IF=5A
IF=10A
10
IF=5A
5
0
0
0
400
600
1000
0
200
400
600
800
1000
800
200
diF/dt（A/μs）
diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt
Fig4. Reverse Recovery Charge vs diF/dt
1.2
1
10
1
0.8
0.6
0.4
0.2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-1
10-2
10-3
trr
IRRM
Qrr
0
0
25
50
100
150
10-4
10-3
10-2
10-1
1
125
75
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/
FMG34S
IF
trr
0.25 IRRM
Qrr
IRRM
0.9 IRRM
dIF/dt
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/
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