FMG3A [TYSEMI]
Dual NPN digital transistor; 双NPN数字晶体管
| 型号： | FMG3A |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Dual NPN digital transistor |
| 文件： | 总2页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
FMG3A
■ Features
Unit: mm
● Dual NPN digital transistor
5
4
1
2
3
(3)
(2)
(1)
R1=4.7kΩ
R1
R1
DTr2
DTr1
(4)
(5)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
50
Collector-emitter voltage
Emitter-base voltage
50
5
V
V
Collector current
100
mA
mW
℃
Power dissipation(Total)
Pd
300
Operating and Storage and Temperature Range
Tj, TSTG
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Symbol
Test conditions
Min
50
50
5
Typ Max
Unit
V
IC = 50 μA, IE = 0
IC = 1 mA, IB = 0
IC = 50 μA, IC = 0
VCB=50V, IE=0
VEB= 4V, IC=0
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
V
V
0.5
0.5
μA
μA
Emitter cutoff current
IEBO
DC current gain
hFE
VCE=5V, IC=1mA
100
250
600
0.3
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
IC = 5 mA; IB = 0.25 mA
VCE=10V, IE= -5m A , f=100MHz
250
4.7
MHz
kΩ
Input resistance
R1
3.29
6.11
■ Marking
Marking
G3
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Product specification
FMG3A
■ Typical Characteristics
1k
1
VCE=5V
lC/lB=20
500
500m
200
200m
100m
50m
Ta=100˚C
25˚C
Ta=100˚C
100
50
−40˚C
25˚C
−40˚C
20
10
5
20m
10m
5m
2
1
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Fig.1 DC current gain vs. collector
current
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相关型号：
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ROHM
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