ER1600D [THINKISEMI]
16Ampere Heat Sink Dual Doubler Polarity Super Fast Recovery Rectifiers;
| 型号： | ER1600D |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16Ampere Heat Sink Dual Doubler Polarity Super Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：802K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMU21S thru FMU26S
FMU21S/FMU22S/FMU23S/FMU24S/FMU25S/FMU26S
Pb Free Plating Product
10 Amperes Insulated Dual Common Cathode Fast Recovery Half Bridge Rectifiers
ITO-220AB/TO-220F-3L
Unit : inch (mm)
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.75 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "U" Suffix "UR"
Series
Negative
Common Cathode Common Anode
Suffix "S" Suffix "R"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FMU25S
FMU23S
FMU21S
UNIT
SYMBOL
FMU22S
FMU24S
FMU26S
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
10.0
100
1.3
A
A
V
IF(AV)
o
(Total Device 2*5A=10A)
Current TC=100 C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
1.7
VF
IR
0.98
(Both Diode/Per Diode/Per Leg)
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
5.0
μA
μA
100
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
CJ
35
65
℃
/W
R JC
3.0
Operating Junction and Storage
Temperature Range
-55 to +150
℃
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
FMU21S thru FMU26S
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
100
80
60
40
20
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
4
2
60 Hz Resistive or
Inductive load
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
50
FMU21S/FMU22S
TJ=125oC
100
FMU23S/FMU24S
FMU25S/FMU26S
5
10
TJ=25oC
1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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