ER1600FCT [PANJIT]
ISOLATION SUPERFAST RECOVERY RECTIFIER; 隔离超快恢复整流器
| 型号： | ER1600FCT |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | ISOLATION SUPERFAST RECOVERY RECTIFIER |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
ER1600FCT~ER1604FCT
ISOLATION SUPERFAST RECOVERY RECTIFIER
Unit : inch (mm)
ITO-220AB
VOLTAGE
CURRENT 16.0 Amperes
50 to 400 Volts
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
Flame Retardant Epoxy Molding Compound.
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Pb free: 98.5% Sn above
.055(1.4)
.039(1.0)
.032(.8)
MAX
MECHANICALDATA
.035(0.9)
.011(0.3)
Case: ITO-220AB Molded plastic
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
.1
(2.55)
.1
(2.55)
AC
AC
Positive CT
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
MAXIMUMRATINGANDELECTRICALCHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ER1600 ER1601 ER1601A ER1602 ER1603 ER1604
PARAMETER
SYMBOL
UNITS
V
FCT
FCT
FCT
FCT
FCT
FCT
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
50
100
150
200
300
400
Maximum RMS Voltage
35
50
70
105
150
140
200
210
300
280
400
V
V
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Current .375"(9.5mm)
I
AV
16.0
125
A
lead length at Tc =90O
C
Peak Forward Surge Current, 8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
I
FSM
A
Maximum Forward Voltage at 8A
V
F
0.95
1.30
V
Maximum DC Reverse Current at T
A
=25O
C
C
10
500
I
R
uA
ns
Rated DC Blocking VoltageT
A
=100O
Maximum Reverse Recovery Time (Note 2)
Typical Junction capacitance (Note 1)
Maximum Thermal Resistance
T
RR
35
50
C
J
62
pF
OC / W
OC
RθJC
3.0
Operating and Storage Temperature Rang
E
T
J
,TSTG
-50 TO +150
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
PAGE . 1
STAD-SEP.12.2004
RATING AND CHARACTERISTIC CURVES
50
10
20
16
12
50-200V
300-400V
6
.375"9.5mm LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
1.0
0.1
4
0
T
J=25O
Pulse Width=200us
C
0
20
40
60
80
100 120 140 160
0
.8
1. .0
1.2
1.4
CASE TEMPERAURE, O
C
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.1- FORWARD CURRENT DERATING CURVE
1000
TJ = 100OC
100
150
125
8.3ms Single
Half Since-Wave
JEDEC Method
100
75
TJ = 75OC
10
50
25
TJ = 25OC
1
0
1
2
5
10
20
50
100
NO. OF CYCLE AT 60HZ
0.1
Fig.4- MAXIMUM NON - REPETITIVE SURGE CURRENT
0
20 40 60 80 100 120 140
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
80
Fig.3- TYPICAL REVERSE CHARACTERISTIC
70
TJ = 25OC
60
50
40
20
10
1
2
5
10 20
50 100 200 500
REVERSE VOLTAGE, VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
PAGE . 2
STAD-SEP.12.2004
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