MADR-009269-000100_15 [TE]
Single Driver for GaAs FET or PIN Diode Switches and Attenuators;
| 型号： | MADR-009269-000100_15 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Single Driver for GaAs FET or PIN Diode Switches and Attenuators |
| 文件： | 总8页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
Functional Schematic
Features
• High Voltage CMOS Technology
•
•
•
•
•
•
•
•
Complementary Outputs
Positive Voltage Control
CMOS device using TTL input levels
Low Power Dissipation
Low Cost Plastic SOICꢀ8 Package
100% Matte Tin Plating over Copper
HalogenꢀFree “Green” Mold Compound
260°C Reflow Compatible
Description
The MADRꢀ009269ꢀ000100 is a single channel
CMOS driver used to translate TTL control inputs
into complementary gate control voltages for GaAs
FET microwave switches and attenuators. High
speed analog CMOS technology is utilized to
achieve low power dissipation at moderate to high
speeds, encompassing most microwave switching
applications. The output HIGH level is optionally 0 to
+2.0V (relative to GND) to optimize the intermodulaꢀ
tion products of FET control devices at low frequenꢀ
cies. For driving PIN Diode circuits, the outputs are
nominally switched between +5V & ꢀ5V.
Pin Configuration3
Pin No.
Function
Output A
GND
1
2
3
4
5
6
7
8
VCC
C, Logic
VEE
Ordering Information1
VOPT
Part Number
Package
GND
MADRꢀ009269ꢀ000100
Bulk Packaging
Output B
MADRꢀ009269ꢀ000DIE
MADRꢀ009269ꢀ0001TR
Die 2
1000 piece reel
3. The bottom of the die should be isolated for part number
MADRꢀ009269ꢀ000DIE.
1. Reference Application Note M513 for reel size
information.
2. Die sales are available in waffle packs in increments of 100
pieces.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
volume is not guaranteed.
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
Guaranteed Operating Ranges 4,5,8
Symbol
VCC
Parameter
Unit
V
Min.
4.5
Typ.
5.0
Max.
5.5
Positive DC Supply Voltage
Negative DC Supply Voltage
VEE
V
ꢀ10.5
ꢀ5.0
ꢀ4.5
6,7
VOPT
Optional DC Output Supply Voltage
Negative Supply Voltage Range
V
V
0
—
VCC
VOPT ꢀ VEE
VCC ꢀ VEE
TOPER
IOH
4.5
Note 6,7
16.0
Positive to negative Supply Range
Operating Temperature
V
9.0
ꢀ40
ꢀ50
—
10.0
+25
—
16.0
+85
—
°C
DC Output Current ꢀ High
DC Output Current ꢀ Low
mA
mA
IOL
—
50
Trise, Tfall
Maximum Input Rise or Fall Time
ns
—
—
500
4. Unused logic inputs must be tied to either GND or VCC
5. All voltages are relative to GND.
.
6. VOPT is grounded in most cases when FETs are driven. To improve the intermodulation performance and the 1 dB compression point of
GaAs control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs
control devices will approximate performance at 500 MHz. It should be noted that the control current that is on the GaAs MMICs will inꢀ
crease when positive controls are applied.
7. When this driver is used to drive PIN diodes, VOPT is often set to +5.0V, with VEE set to ꢀ5.0V.
8. 0.01 uF decoupling capacitors are required on the power supply lines.
Truth Table
Handling Procedures
Please observe the following precautions to avoid
damage:
Input
C
Outputs
A
B
Static Sensitivity
Logic “0”
Logic “1”
VEE
VOPT
VOPT
VEE
Silicon Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.
2
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
DC Characteristics over Guaranteed Operating Range
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
Max.
VIH
Input High Voltage
Guaranteed High Input Voltage
V
2.0
—
—
VIL
VOH
VOL
Input Low Voltage
Output High Voltage
Output Low Voltage
Guaranteed Low Input Voltage
IOH = ꢀ1 mA
V
V
V
—
VOPT ꢀ 0.1
—
—
—
—
0.8
—
IOL = 1 mA
VEE + 0.1
VIN = VCC or GND, VEE = min,
IIN
Input Leakage Current
ꢁA
ꢂ
ꢀ1
—
1
V
CC = max, VOPT = min or max
VCC = 5.0V, VEE = ꢀ5.0V,
VOPT = 5.0V, VOUT = ꢀ4.9V
+25°C
Output Resistance NFET On
RNFET
—
30
—
(to VEE
)
VCC = 5.0V, VEE = ꢀ5.0V,
VOPT = 5.0V, VOUT = 4.9V
+25°C
Output Resistance PFET On
(to VOPT
RPFET
ꢂ
—
30
—
)
VIN = VCC or GND, VEE = ꢀ10.5V,
VCC = 5.5V, VOPT = 5.5V,
No Output Load
ICC
ꢀ ICC
IEE
Quiescent Supply Current
ꢁA
mA
ꢁA
—
—
—
1
1
1
—
—
—
Additional Supply Current
(per TTL Input pin)
VCC= max, VIN = VCC ꢀ2.1V
VIN = VCC or GND, VEE = ꢀ10.5V,
Quiescent Supply Current
Quiescent Supply Current
V
CC = 5.5V, VOPT = 5.5V,
No Output Load
VIN = VCC or GND, VEE = ꢀ10.5V,
VCC = 5.5V, VOPT = 5.5V,
No Output Load
IOPT
ꢁA
—
1
—
3
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
AC Characteristics Over Guaranteed Operating Range9
Typical performance
Symbol
TPLH
Parameter
Propagation Delay
ꢀ40°C
20
20
5
+85°C
+85°C
Unit
ns
22
22
5
25
25
8
TPHL
Propagation Delay
ns
TTLH
Output Transition Time (Rising Edge)
Output Transition Time (Falling Edge)
Delay Skew
ns
TTHL
4
4
5
ns
Tskew
2.5
DC
5
2.5
—
5
2.5
10
5
ns
PRF (max)
CIN
50% Duty Cycle
MHz
pF
Input Capacitance
9. VCC = +4.5V, VEE = ꢀ4.5V, VOPT = 0V or +4.5V, CL = 25 pF, Trise, Tfall = 6 ns
Switching Waveforms
Tf
Tr
LOGIC 1
90%
1.3V
90%
1.3V
INPUT C
VIN
10%
10%
TPHL
LOGIC 0
TPLH
TTLH
TTHL
OUTPUT
HIGH
OUTPUT B
90%
50%
90%
50%
VOUT
10%
10%
TSKEW
OUTPUT
LOW
OUTPUT A
TSKEW
4
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
Absolute Maximum Ratings11
Symbol
Parameter
Min
Max
Unit
VCC
Positive DC Supply Voltage
ꢀ0.5
7.0
V
ICC
Positive DC Supply Current (ꢀ0.5V ≤ VIN ≤ 0.8V;
2.0V ≤ VIN ≤ VCC + 0.5V; VCC ꢀ VIN ≤ 7.0V )
—
20
mA
VEE
IEE
Negative DC Supply Voltage
ꢀ11.0
ꢀ60
0.5
—
V
Negative DC Supply Current (per Output) 12
mA
VOPT
IOPT
Optional DC Output Supply Voltage
Optional DC Output Supply Current (per Output) 12
Output to Negative Supply Voltage Range
Positive to Negative Supply Voltage Range
DC Input Voltage
ꢀ0.5
—
Note 13
60
V
mA
V
VOPT ꢀ VEE
VCC ꢀ VEE
VIN
ꢀ0.5
ꢀ0.5
18.0
18.0
V
ꢀ0.5
VCC +0.5
V
Note 14
VO
DC Output Voltage
VEE – 0.5 VOPT + 0.5
V
15
PD
Power Dissipation in Still Air
—
500
125
150
—
mW
TOPER
TSTG
Operating Temperature
Storage Temperature
ESD Sensitivity
ꢀ55
ꢀ65
2.0
°C
°C
kV
ESD
11. All voltages are referenced to GND. All inputs and outputs incorporate latchꢀup protection structures.
12. The maximum IEE and IOPT are specified under the condition of VCC = 5.5V, VEE = ꢀ5.5V, VOPT = 5.5V, and
the total power dissipation is within 500 mW in still air.
13. The absolute maximum rating for VOPT is VCC + 0.5V, or +7.0V, whichever is less.
14. If VCC ≥ 6.5V, then the minimum for VIN is VCC ꢀ 7.0V.
15. Derate ꢀ7 mW/°C from 65°C to 85°C.
Equivalent Output Circuit for A and B Outputs (50 mA load at 25°)
5
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
Typical Application for a SPDT Switch
Description of Circuit
The MADRꢀ009269ꢀ000100 provides a pair of complementary outputs that are each capable of driving a maxiꢀ
mum of ± 50 mA into a load. In addition, with proper capacitor selection (C3 & C4) used in parallel with the curꢀ
rent setting resistor (R1 & R2), additional spiking current can be achieved.
To achieve the NonꢀInverting and Inverting complementary voltages, each output is switched between two interꢀ
nal FETs. The FETs are connected to VOPT for the positive output and VEE for the negative output. VOPT and VEE
are adjustable for various configurations and have the following limitations: VEE can be no more negative than –
10.5 volts; VOPT can be no more positive than +5.5 volts AND VOPT must always be less than or equal to VCC.
Increasing VOPT beyond VCC will prevent the device from switching states when commanded to by the logic input.
The most common configuration is to drive VEE at –5.0 volts with VCC and VOPT tied together at +5.0 volts.
6
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
• North America Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
Lead-Free, SOIC-8†
†
Reference Application Note M538 for leadꢀfree solder reflow
recommendations.
7
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
Die Outline
Pad Configuration16,17
Die Size: 1130 x 1290 ꢁm (nominal)
X (ꢁm)
nominal
Y (ꢁm)
nominal
Pad Size (ꢁm)
X x Y
Pad No.
0
1
0
0
Lower left edge of die
94 x 132
266.40
1092.35
2
157.50
903.70
85 x 85
3
4
5
6
7
8
9
200.40
365.30
684.35
972.50
972.50
863.60
1130
663.65
200.45
157.50
230.50
451.45
1092.35
1290
85 x 85
85 x 85
85 x 85
85 x 85
85 x 85
94 x 132
Upper right edge of die
16. All X,Y dimensions are at bond pad center.
17. Die thickness is 8.0 mils.
8
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
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