AM55-0004RTR [TE]
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz; 250毫瓦线性功率放大器和T / R开关1.8 - 2.0 GHz的
| 型号： | AM55-0004RTR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz |
| 文件： | 总8页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Specifications
250 mW Linear Power Amplifier and T/R Switch
1.8 - 2.0 GHz
AM55-0004
Features
SSOP-28
●
Operates Over Full PCN/PCS/PHS Bands
Operates Over +3 V to +5 V Supply Voltage
+.0037
-.0041
+0,09
-0,1
.3900
9,91
●
+.0025
.0275
0,7
-.0025
●
+24 dBm P
Typical at PA Out
1dB
+0,06
-0,06
●
●
●
35% PAE @ P
for Linear Operation
1dB
+.0034
On-Chip T/R Switch, Linear Operation to +30 dBm
Low Cost SSOP-28 Plastic Package
.1540
.236 ±.008
5,99±0,2
-.0043
+0,09
-0,11
3,91
PIN 1
Description
+.0018
-.0005
+0,05
-0,01
.057 ±.003
1,45 ±0,08
.015 (0,38) X 45°
.0080
0,2
M/A-COM’s AM55-0004 power amplifier/switch integrates a
power amplifier and transmit/receive switch in a low cost
SSOP package. The power amplifier delivers +24 dBm of
linear power with high efficiency and can be operated at
supply voltages as low as 2.7 V. It is ideally suited for
QPSK or other linearly modulated systems in the 1.8 to 2.0
GHz frequency band.
+.004
-.001
+0,1
-0,03
.010
0-8°
.007 ±.003
0,18 ±0,08
.025
0,64
0,25
+.022
-.013
.028
0,71
.004 (0,10)
+0,56
-0,33
Dimensions are inches over millimeters.
The power amplifier/switch is fully monolithic and requires
only one output capacitor for power match. The T/R switch
achieves good insertion loss and isolation without degrading
the overall linearity.
Ordering Information
The AM55-0004 is ideally suited for final stage power
amplification in linear TDD systems. The integrated switch is
convenient for duplexing. The AM55-0004 can also be used
as a driver stage for high power systems. Typical applications
include Japanese PHS systems or PCN/PCS transmit chains.
Part Number
Description
AM55-0004
SSOP 28-Lead Plastic Package
Forward Tape & Reel*
Reverse Tape & Reel*
Designer’s Kit
AM55-0004TR
AM55-0004RTR
AM55-0004SMB
M/A-COM’s AM55-0004 is fabricated using a mature
0.5-micron gate length GaAs process. The process features
full passivation for increased performance and reliability.
If specific reel size is required, consult factory for part
number assignment.
*
Typical Electrical Specifications
Test conditions: Frequency: 1.9 GHz, V
= V
= 4.8 V ±10%, V adjusted for 30 mA quiescent bias on V
,
DD1
DD2
G1
DD1
V
adjusted for 65 mA quiescent bias on V , TA= +25°C
G2
DD2
Parameter
Units
Min.
Typ.
Max.
Power Amplifier
Linear Gain
dB
dBm
mA
22
22.5
75
24
24
Power Output @ P1dB at PA OUT port
Current From Positive Supply @ P1dB
Input VSWR
175
2.0:1
275
1.0
T/R Switch
Insertion Loss
dB
dB
0.6
1.5:1
20
Input Match
Isolation
15
Specifications Subject to Change Without Notice
V2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
1
250 mW Linear Power Amplifier and T/R Switch
Absolute Maximum Ratings1
AM55-0004
Truth Table
Operating Mode
PA Tx
VSW
X
VSW
SAVE Tx
Parameter
Max. Input Power2
Operating Voltages2
Absolute Maximum
+23 dBm
VDD = 7 V
X
X
0 V
PA Sleep
X
-4.0 Volts
VGG = -5 V
T/R Switch Tx
T/R Switch Rx
0 Volts -4.0 Volts
-4.0 Volts 0 Volts
X
X
VDD - VGG = 8 V
Operating Temperature
Storage Temperature
-40°C to +85°C
-65°C to +150°C
X - Don’t Care
1. Exceeding these limits may cause permanent damage.
2. Ambient temperature (T ) = +25°C
A
Pin Configuration
Pin No. Pin Name
Functional Diagram and Pin Configuration
Description
1
2
GND
VSW
DC and RF Ground
1
28
Complimentary T/R Switch Control,
-4 V Tx mode/0 V Rx mode
GND
GND
VSW
V
VDD2
VSW
GND
Tx IN
GND
GND
3
4
5
6
7
GND
Tx IN
DC and RF Ground
Transmit side of T/R switch
DC and RF Ground
DC and RF Ground
GND
PA OUT
GND
GND
ANT IN/OUT
Common port of T/R switch which
is connected to the antenna
GND
GND
ANT IN/OUT
GND
8
GND
Rx OUT
GND
GND
V
DC and RF Ground
GND
V
G2
9
Receive side of T/R switch
DC and RF Ground
Rx OUT
10
11
12
GND
V
GND
GND
DC and RF Ground
Positive bias for the first stage of
PA, +2.7 to +6.0 volts
Sleep mode control of first stage of
PA ONLY
G1
1
DD
VDD1
GND
PA IN
GND
13
SAVE Tx
SAVE Tx
GND
0 V — first PA stage on
-4 V — first PA stage off
DC and RF Ground
14
15
14
15
16
17
18
GND
GND
PA IN
GND
DC and RF Ground
RF input of the Power Amplifier
DC and RF Ground
V
Negative bias control for the first PA
stage, voltage divider is on the MMIC,
G1
adjusted to set V
quiescent bias
DD1
current, which is typically 30 mA.
Input impedance: 10 kΩ
19
20
GND
DC and RF Ground
V
Negative bias control for the second
PA stage, adjusted to set V
G2
DD2
quiescent bias current, which is
typically 65 mA.
Input impedance: > 1MΩ
21
22
23
24
25
26
GND
GND
Second Stage DC and RF Ground
Second Stage DC and RF Ground
Second Stage DC and RF Ground
Second Stage DC and RF Ground
RF output of the Power Amplifier
GND
GND
PA OUT
V
Positive bias for the second stage of
the PA, +2.7 to +6.0 volts
DD2
27
28
VSW
GND
T/R Switch Control, 0 V Tx mode/-4 V
Rx mode
DC and RF Ground
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
2
250 mW Linear Power Amplifier and T/R Switch
Power Amplifier Small Signal Performance1
AM55-0004
Power Amplifier CW Performance at1.9 GHz1
GAIN
POWER OUTPUT
27
28
6.0 V
6.0 V
26
24
22
20
18
4.8 V
24
4.8 V
21
3.6 V
3.6 V
18
3.0 V
3.0 V
15
1.50
1.75
2.00
2.25
2.50
-5
-3
-1
(dBm)
1
3
FREQUENCY (GHz)
P
IN
INPUT MATCH
POWER ADDED EFFICIENCY (%)
0
-5
45
3.0 V
4.8 V
6.0 V
35 3.6 V
-10
-15
-20
-25
25
15
4.8 V
3.0 V
6.0 V
3.6 V
5
1.50
1.75
2.00
2.25
2.50
-5
-3
-1
1
3
FREQUENCY (GHz)
P
(dBm)
IN
OUTPUT MATCH
GAIN COMPRESSION
0
-5
0
-1
-2
-3
-4
-5
6.0 V
4.8 V
-10
-15
-20
-25
6.0 V
3.0 V
4.8 V
3.0 V
3.6 V
3.6 V
1
1.50
1.75
2.00
FREQUENCY (GHz)
2.25
2.50
-5
-3
-1
(dBm)
3
P
IN
1. All data measured at T = +25°C and V , V adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA,
A
G1
G2
respectively.
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
3
250 mW Linear Power Amplifier and T/R Switch
Power Amplifier Temperature Performance1
AM55-0004
Power Amplifier Spurious Response at
Various Supply Voltages1
THIRD ORDER INTERMODULATION RATIO @ 1.9 GHz
(TONE SPACING 600 KHz)
LINEAR GAIN, V
= V
= 4.8 V
DD1
DD2
30
27
24
21
18
15
6.0 V
-15°C
25
+25°C
4.8 V
20
+70°C
3.0 V
15
3.6 V
10
1.50
1.75
2.00
2.25
2.50
15
17
19
21
23
25
FREQUENCY (GHz)
FUNDAMENTAL P
/TONE (dBm)
OUT
2ND HARMONIC RATIO @ 1.9 GHz
POWER OUTPUT @ 1.9 GHz, V
= V
= 4.8 V
DD1
DD2
60
50
40
30
20
28
26
24
22
20
18
+25°C
4.8 V
-15°C
4.0 V
3.0 V
+70°C
-5
-3
-1
(dBm)
1
3
10
13
16
19
22
25
P
FUNDAMENTAL P
(dBm)
IN
OUT
POWER ADDED EFFICIENCY (%) @ 1.9 GHz,
3RD HARMONIC RATIO @ 1.9 GHz
V
= V
= 4.8 V
DD1
DD2
40
80
75
70
65
60
55
50
4.8 V
-15°C
35
30
25
20
15
10
4.0 V
+25°C
+70°C
3.0 V
-5
-3
-1
1
3
10
13
16
19
(dBm)
OUT
22
25
P
(dBm)
FUNDAMENTAL P
IN
1. All data measured at T = +25°C and V , V adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA, respectively.
A
G1
G2
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
4
250 mW Linear Power Amplifier and T/R Switch
AM55-0004
Transmit/Receive Switch Performance
Power Amplifier Spectral Response Under
Modulation Drive
(π/4 DQPSK, ␣ = 0.5, 384 kB/sec, 9-bit PN code)
SPECTRAL RESPONSE UNDER MODULATION1
INSERTION LOSS
(V = 3.0 V, P
= 20.5 dBm)
D
OUT
0.0
-0.5
-1.0
-1.5
-2.0
0
-20
-40
-60
-80
-15°C
+25°C
+70°C
1899.0
1899.4
1899.8
1900.2
1900.6
1901.0
1.50
1.75
2.00
FREQUENCY (GHz)
2.25
2.50
FREQUENCY (MHz)
SPECTRAL RESPONSE UNDER MODULATION1
(V = 4.8 V, P
= 23.4 dBm)
ISOLATION (@ -15°C, +25°C and +70°C)
D
OUT
0
-10
-20
-30
-40
-50
-60
-70
-20
-25
-30
-35
-40
1.50
1.75
2.00
2.25
2.50
1899.0
1899.4
1899.8
1900.2
1900.6
1901.0
FREQUENCY (GHz)
FREQUENCY (MHz)
RETURN LOSS (@ -15°C, +25°C and +70°C)
0
-5
Output Power Under Modulation2
-10
-15
-20
-25
-30
-35
In
VD (volts)
POUT (dBm)
20.5
Out
3
3.6
4
21.4
22.2
4.8
6
23.4
23.7
1.5 1.6 1.7 1.8
1.9
2.0 2.1
2.2
2.3 2.4
2.5
FREQUENCY (GHz)
1. Spectral output is tested under the following conditions:
Modulation scheme is π/4 DQPSK with a bit transfer rate
of 384 kB/sec and a root Nyquist filter with ␣ = 0.5 per
RCR STD-28. The spectrum analyzer settings are as follows:
LINEARITY (Tx MODE)
33
31
29
27
25
23
2.5
1.5
0.5
Resolution bandwidth: 10 kHz
Video bandwidth: 100 kHz
Sweep time: 5 seconds
-0.5
-1.5
-2.5
2. This chart documents the modulated output power delivered
for a fixed adjacent channel interference (ACI) rejection of 55
dBc at a 600-kHz offset.
25 26 27 28
29 30 31 32 33 34
POWER IN (dBm)
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
5
250 mW Linear Power Amplifier and T/R Switch
Recommended PCB Configuration
AM55-0004
Layout View
Cross-Section View
0.700 in.
RF Traces + Components
C1
C6
Pin 1
RF Ground
DC Routing
C9
Customer Defined
C10
R3 C2 R2
0.490 in.
R1
The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between
50-Ω lines and package pins. M/A-COM recommends an
FR-4 dielectric thickness of 0.008 in. (0.2 mm), yielding a
50-Ω line width of 0.015 in. (0.38 mm). The recommended
metalization thickness is 1 oz. copper.
C5
C3
C8
C7
C4
Shaded traces are vias to DC routing layer and traces on DC
routing layer.
Biasing Procedure
External Circuitry Parts List
The AM55-0004 requires that VGG bias be applied prior to
any VDD bias. Permanent damage may occur if this
procedure is not followed. All FETs in the PA will draw
excessive current and damage internal circuitry.
Label
C1 - C5
C6 - C8
C9
Value
1000 pF
68 pF
Purpose
Low frequency bypass
RF bypass
1.5 pF
Output power tuning
Reduces low frequency gain
Voltage divider to VG2
Voltage divider to VG2
Reduces low frequency gain
Power match
C10
15 pF
R1
2.7 k Ω
1.5 k Ω
150 Ω
R2
R3
Tline
0.250 in. long
All off-chip components are low-cost surface mount components obtainable from
multiple sources. (0.020 in. x 0.040 in. or 0.030 in. x 0.050 in.)
External Circuitry
VSW
VDD2
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
C1
C6
VSW
Tx IN
3
4
TLine
PA OUT
C9
5
6
7
C10
R3
ANT IN/OUT
R1
8
Rx OUT
VDD1
VG2
9
C2
10
11
12
13
14
R2
C8
C5
VG1
C3
C7
Save Tx
C4
PA IN
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
6
250 mW Linear Power Amplifier and T/R Switch
Designer’s Kit (AM55-0004SMB)
AM55-0004
The AM55-0004SMB Designer's Kit allows for immediate evaluation of M/A-COM's AM55-0004 integrated Power Amplifier
and T/R Switch. The evaluation board consists of an AM55-0004, recommended external surface mount circuitry, RF
connectors and a DC multipin connector, all mounted to a multi-layer FR-4 PCB. Other items included in the Designer's Kit:
a floppy disk (with typical performance data and a .DXF file of the recommended PCB layout) and any additional
Application Notes. The AM55-0004SMB PA/Switch evaluation PCB and block diagram are illustrated below with all
functional ports labeled.
P/A Switch Sample Board
Functional Block Diagram
VG1
VDD2
VDD1
PA OUT
Tx IN
TX IN
VSW VG2
VSW
SAVE T
ANT IN/OUT
PA OUT
ANT IN/OUT
RX OUT
PA IN
Rx OUT
PA IN
DC Connector Pinout
PCB DC
Connector
Device Pin
PCB DC
Connector
Device Pin
Number
Function
Function
Number
N/C
12
1
2
3
4
5
6
N/C
DD1 (+ 4.8 V)
11
12
13
14
15
16
VSW
VG1
27
18
V
SAVE Tx (0 V/-4 V)
GND
13
VSW
GND
VG2
27
N/C
13
N/C
20
SAVE Tx (0 V/-4 V)
VG1
18
VG1
18
7
8
2
17
18
N/C
VG2
N/C
20
VSW
GND
N/C
9
2
19
20
N/C
N/C
26
VSW
VG1
10
18
VDD2 ( + 4.8 V)
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
7
250 mW Linear Power Amplifier and T/R Switch
AM55-0004
AM55-0004SMB Biasing Procedure
In order to prevent transients which may damage the MMIC, please adhere to the following procedure.
• Turn on all power supplies and set all voltages to 0 volts BEFORE connecting the power supplies to the
DC connector.
• Apply -4.0 volt supply or GND to DC connector pin 9 (VSW, see truth table for desired mode).
• Apply -4.0 volt supply or GND to DC connector pin 13 (VSW, see truth table for desired mode).
• Apply a -4.0 volt supply to the DC connector pin 16 (V ).
G1
• Apply a -4.0 volt supply to the DC connector pin 18 (V ).
G2
• Apply a +4.8 volt supply to the DC connector pin 2 (V ).
DD1
• Apply a +4.8 volt supply to the DC connector pin 20 (V ).
DD2
• Apply GND to DC connector pin 5 (Save Tx).
• Adjust V supply for desired V
quiescent current (typically 30 mA).
quiescent current (typically 65 mA).
G1
DD1
• Adjust V supply for desired V
G2
DD2
• Change voltage on DC connector pin 5 as required (Save Tx, see truth table for desired mode).
• Apply RF power and test.
• To power off, reverse above procedure
1. Set V & V to -4 V.
G1
G2
2. Set V
& V
to 0 V.
DD1
DD2
3. Set control voltage supplies to 0 V.
4. Disconnect bias lines from DC connector.
5. Turn off power supplies.
Evaluation PCB and RF Connector Losses
Port Reference
PA IN
Estimated Loss (dB)
0.15
0.20
0.20
0.20
0.20
PA OUT
Tx IN
ANT IN/OUT
Rx OUT
The DC connector on the Designer’s Kit PCB allows selection of all the device’s operating modes.
It is accomplished by one or more of the following methods:
1. A mating female multi-pin connector (Newark Electronics
Stock # 46F-4658, not included)
2. Wires soldered to the necessary pins (not included)
3. Clip leads (not included)
4. A combination of clip leads or wires and jumpers
(jumpers included as required)
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
■
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
■
Telephone: 800-366-2266
8
相关型号：
©2020 ICPDF网 联系我们和版权申明