AM55-0007 [ETC]
140 mW Power Amplifier with T/R Switch 2.42.5 GHZ ; 140毫瓦功率放大器T / R开关2.42.5 GHZ
| 型号： | AM55-0007 |
| 厂家： | 
ETC |
| 描述： | 140 mW Power Amplifier with T/R Switch 2.42.5 GHZ
|
| 文件： | 总7页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Coming Attractions
140 mW Power Amplifier withT/R Switch
2.4 - 2.5 GHz
AM55-0007
V 2.00
Features
SSOP-24
●
Highly Integrated PA/Attenuator and T/R Switch
●
Low Current Consumption: 120 mA Typ.
●
Switch and Attenuator Controls CMOS Compatible
●
High Power (140 mW) and Low Power (16 mW)
Transmit Power Control
●
+5 V/-5 V Fixed Supply Voltages
Description
M/A-COM’s AM55-0007 is a GaAs power amplifier with an
integrated transmit/receive switch in a low cost SSOP 24
plastic package. The AM55-0007 employs active bias cir-
cuits that eliminate the need for external bias adjustment. A
‘Sleep Mode’ is incorporated which turns off current draw
from the positive supply of the PA during receive mode.
The AM55-0007 provides a 10-dB step attenuator for use as
a transmit power controller.
The AM55-0007 is designed for low power consumption
and is ideally suited for FSK systems in the 2.4 - 2.5 GHz
bands (North American ISM, Japanese RCR.32 and
European ETSI). Typical applications include WLAN and
wireless portable data collection.
Dimensions are in inches over millimeters.
Ordering Information
This amplifier is also available with diversity switching
(AM55-0001). Either power amplifier can be combined with
a transceiver IC (MD58-0001) to form a complete RF front
end.
Part Number
Description
AM55-0007
SSOP 24-Lead Plastic Package
Forward Tape & Reel*
Reverse Tape & Reel*
Designer’s Kit
AM55-0007TR
AM55-0007RTR
AM55-0007SMB
M/A-COM's AM55-0007 is fabricated using a mature
0.5-micron gate length GaAs process. The process features
full passivation for increased performance and reliability.
If specific reel size is required, consult factory for part
number assignment.
*
Typical Electrical Specifications
Test Conditions: Frequency: 2.45 GHz, V
= 5 V ±5%, V
GG
= - 5 V ±5%,TA= +25°C
DD
Parameter
Power Amplifier
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
High Power Mode
Low Power Mode
Both Modes
dB
dB
23
12
26.5
16
VSWR In
1.5:1
21.5
12
Output Power
P
P
= -3 dBm
= -3 dBm
High Power Mode
Low Power Mode
dBm
dBm
dBc
dBc
19
8
IN
Second Harmonic
Third Harmonic
-25
-17
High Power Mode
IN
I
(V
+ V
+ V
PA)
DD
mA
120
200
DD DD1
DD2
T/R Switch
Insertion Loss
Isolation
dB
dB
1.2
15
10
VSWR In/Out
1.5:1
V 2.00
Absolute Maximum Ratings1
TruthTable
Control Line
Parameter
Max. Input Power2
Operating Voltages2,3
Absolute Maximum
+23 dBm
Operating
Mode
ATTN
CTRL
T/R
CTRL
SLEEP
CTRL
*
V
= 8 V
DD
GG
X
0
1
X
1
0
0
1
-5 V
0 V
Receive
V
= -8 V
High Power
Low Power
Sleep Mode
Operating Temperature
Storage Temperature
-40°C to +85°C
-65°C to +150°C
0 V
-5 V
1.Exceeding these limits may cause permanent damage.
X - Don’t Care
2. Ambient temperature (T ) = +25°C
“0”= 0 V to 0.2 V @ 100 µA
“1” = V to V -0.2 V @ 200 µA
A
3. |V | + |V
| not to exceed 12 volts.
DD
GG
DD
DD
Control voltage levels between 0 V and V
SLEEP CTRL control line. (Pin 24)
must be used on
GG
*
Pin Configuration
Pin No.
Pin Name
Description
1
V
Negative voltage to all active
bias networks
GG
2
T/R CTRL
0 V for transmit mode, +5 V for
receive mode
Functional Diagram and Pin Configuration
3
4
5
6
Rx OUT
GND
Output of T/R switch for receive mode
DC and RF Ground
PA OUT
Output of T/R switch for transmit mode
V
PA
V
for output stage of PA, V for
DD
DD
DD
VGG
T/R CTRL
Rx OUT
GND
SLEEP CTRL
GND
active bias circuit of output stage
7
8
GND
DC and RF Ground
ATTN CTRL
0 V for high power mode, +5 V for low
power mode
PA IN
GND
9
GND
GND
GND
GND
GND
GND
GND
GND
DC and RF Ground
DC and RF Ground
DC and RF Ground
DC and RF Ground
DC and RF Ground
DC and RF Ground
DC and RF Ground
DC and RF Ground
PA OUT
10
11
12
13
14
15
16
17
GND
VDD1
VDD PA
GND
GND
VDD2
ATTN CTRL
GND
GND
GND
GND
GND
GND
GND
GND
V
V
for both diversity and T/R
DD2
DD
switches, V
for second stage of PA
DD
DC and RF Ground
for first stage of PA, V
18
19
GND
V
V
of
DD
DD1
DD
active bias for the first and second
stage of PA
20
21
22
23
24
GND
GND
PA IN
GND
DC and RF Ground
DC and RF Ground
RF input to PA
DC and RF Ground
SLEEP CTRL 0 V PA "on" mode, -5 V PA "sleep"
mode. Sleep mode shuts off active
bias and "pinches off" all PA FETs.
V 2.00
Small Signal Power Amplifier1
LINEAR GAIN vsV ,V
DD GG
LINEAR GAIN
28
26
24
22
20
18
30
-20°C
±6.0 V
26
+25°C
22
18
±4.0 V
+70°C
14
2.0
2.2
2.4
2.6
2.8
3.0
2.0
2.2
2.4
2.6
2.8
3.0
FREQUENCY (GHz)
FREQUENCY (GHz)
OUTPUT MATCH
INPUT MATCH
0
-4
-8
0
-5
-10
-15
-20
-25
-30
-20°C
-20°C
+25°C
+25°C
+70°C
2.4
-12
-16
+70°C
2.0
2.2
2.6
2.8
3.0
2.0
2.2
2.4
2.6
2.8
3.0
FREQUENCY (GHz)
FREQUENCY (GHz)
T/R Switch Small Signal Performance1
RETURN LOSS
INSERTION LOSS & ISOLATION
0
0
-5
0
-5
-1
-10
-15
-2
-3
-4
-5
Output
Input
-10
-15
-20
-20
-25
2.0
2.2
2.4
2.6
2.8
3.0
2.0
2.2
2.4
2.6
2.8
3.0
FREQUENCY (GHz)
FREQUENCY (GHz)
1. Unless otherwise noted, Frequency: 2.45 GHz, V
DD
= 5 V ±5%, V
= - 5 V ±5%, TA= +25°C
GG
V 2.00
Power Amplifier Power Performance1
P
vs P
IN
OUT
0
-1
-2
-3
-4
-5
-6
-7
24
22
20
18
16
14
12
10
Compression
-20°C
+25°C
+70°C
-15
-12
-9
-6
(dBm)
-3
0
P
IN
CURRENT DRAW and POWER ADDED EFFICIENCY
160
140
120
100
80
25
20
15
10
5
+70°C
+25°C
-20°C
-20°C
+25°C
+70°C
60
0
-15
-12
-9
-6
(dB)
-3
0
P
IN
P
vs V
,V
OUT
DD GG
24
±6.0 V
22
20
18
16
14
12
10
± 5.5 V
±5.0 V
± 4.5 V
±4.0 V
-15
-11
-7
(dBm)
-3
1
P
IN
1. Unless otherwise noted, Frequency: 2.45 GHz, V
DD
= 5 V ±5%, V
GG
= - 5 V ±5%, TA= +25°C
V 2.00
Recommended PCB Configuration
Layout View
Cross-Section View
RF Traces + Components
0.710 in.
C3
C7
RF Ground
DC Routing
C6 C9
C2
Customer Defined
The PCB dielectric between RF traces and RF ground
layers should be chosen to reduce RF discontinuities
between 50-W lines and package pins. M/A-COM rec-
ommends an FR-4 dielectric thickness of 0.008 in. (0.2
mm), yielding a 50-W line width of 0.015 in.
(0.38 mm). The recommended metalization thickness is
1 oz. copper.
C4
C8
PIN
1
Shaded traces are vias to DC routing layer and traces on
DC routing layer.
C1
C5
Biasing Procedure
The AM55-0007 requires the V
bias be applied prior
bias. Permanent damage may occur if this
GG
to any V
DD
External Circuitry Parts List
procedure is not followed. All FETs in the PA will draw
excessive current and damage internal circuitry.
Label
C1 - C4
C5 - C8
C9
Value
33 pF
Purpose
Bypass (GHz)
Bypass (MHz)
Bypass (kHz)
220 pF
0.01 µF
All off-chip components are low-cost surface mount components obtain-
able from multiple sources. (0.020 in.x 0.040 in.or
0.030 in.x 0.050 in.)
External Circuitry
VGG
1
24
SLEEP CTRL
C5
C1
C2
2
3
4
5
6
23
22
T/R CTRL
RX OUT
PA IN
21
20
19
VDD1
PA OUT
C4
C3
C8
C7
V
DD PA
7
18
17
16
C9
8
VDD2
9
C6
10
11
12
15
14
ATTN CTRL
13
V 2.00
Designer’s Kit (AM55-0007SMB)
The AM55-0007SMB Designer's Kit allows for immediate evaluation of M/A-COM's AM55-0007 integrated Power Amplifier
with T/R and Diversity Switch. The evaluation board consists of an AM55-0007, recommended external surface mount cir-
cuitry, RF connectors and a DC multi-pin connector, all mounted to a multi-layer FR-4 PCB. Other items included in the
Designer's Kit: a floppy disk (with typical performance data and a .DXF file of the recommended PCB layout) and any addi-
tional Application Notes. The AM55-0007SMB evaluation PCB and block diagram are illustrated below with all functional
ports labeled.
P/A Switch Sample Board
Functional Block Diagram
PIN 1
PIN 19
PIN 20
PA OUT
PIN 2
PA IN
RX OUT
(TO REC)
1
PA OUT
TO REC.
PA IN
DC Connector Pinout
PCB DC
Function
Connector
Device Pin
Number
PCB DC
Function
Connector
Device Pin
Number
1
2
V
V
(+ 5 V)
(+ 5 V)
19
11
12
13
14
15
16
17
18
19
20
Logic High (V
)
19
2
DD1
DD1
17
T/R Control (0 V/+5 V)
Logic Low (GND)
DD2
3
N/C
N/C
N/C
N/C
N/C
N/C
24
N/C
2
4
N/C
N/C
N/C
T/R Control (0 V/+5 V)
5
Logic High (V
)
19
8
DD1
6
ATTN Control (0 V/+5 V)
Logic Low (GND)
7
Negative Logic High (GND)
PA Control (0 V/-5 V)
N/C
8
8
ATTN Control (0 V/+5 V)
9
Negative Logic Low (V
)
1
V
PA (+5 V)
( - 5 V)
6
GG
PA Control (0 V/-5 V)
DD
10
24
V
1
GG
V 2.00
PCB DC Connector Jumper Settings
Jumpers
(Position 2)
Jumpers
(Position 1)
VDD2 VDD1
Pin 2
Pin 1
Pin 2
Pin 1
PA CTL
TR CTL
ATTN
Jumper 1
Jumper 2
Jumper 1
Jumper 2
Jumper 3
Jumper 3
Pin 20
Pin 19
Pin 20
Pin 19
Jumper 1 (PA Sleep Control)
Position 1 = PA ON
Position 2 = PA Sleep Mode
Jumper 2 (T/R Switch Control)
Jumper 3 (Attenuator Control)
Position 1 = Receive Mode
Position 2 = Transmit Mode
Position 1 = Attenuator ON (Low Power Transmit)
Position 2 = Attenuator OFF (High Power Transmit)
AM55-0007SMB Biasing Procedure
Evaluation PCB and RF Connector Losses
In order to prevent transients which may damage
the MMIC, please adhere to the following procedure.
Port Reference
PA IN
Approximate Loss (dB)
0.25
0.25
0.25
• Turn on all power supplies and set all voltages to
0 volts BEFORE connecting the power supplies to the
DC connector.
PA OUT
Rx OUT (TO REC)
• Set jumpers for desired test mode.
The DC connector on the Designer’s Kit PCB allows
selection of all the device’s operating modes. It is
accomplished by one or more of the following meth-
ods:
• Apply a -5.0 volt supply to DC connector pin 20 (V ).
GG
• Apply a +5.0 volt supply to the DC connector pin 1 (V
).
DD1
• Apply a +5.0 volt supply to the DC connector pin 2 (V
).
DD2
1. A mating female multi-pin connector (Newark
Electronics Stock # 46F-4658, not included)
• Apply a +5.0 volt supply to the DC connector pin 19
(V PA).
DD
2. Wires soldered to the necessary pins
(not included)
• Adjust V
supply to -5 volts.
GG
• Adjust all V
supplies to +5 volts.
DD
3. Clip leads (not included)
• Hot switching of jumpers will not damage device.
4. A combination of clip leads or wires and jumpers
(jumpers included as required)
• To power off, reverse above procedure.
1. Set V
2. Set V
& V
DD2
& V
DD
PA to 0 volts.
DD1
to 0 volts.
GG
3. Disconnect bias lines from DC connector.
4. Turn off power supplies.
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