U2891B-MFS [TEMIC]

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U2891B-MFS
型号: U2891B-MFS
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
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光电二极管
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U2891B  
TELEFUNKEN Semiconductors  
2.5 GHz Quadrature Up-Converter  
Description  
The U2891B is a silicon monolithic IC made with TELE- ulator and mixer. The RF ports are single ended and the  
FUNKEN’s advanced UHF process. The IC consists of a device can be operated adjustment free, but for optimiza-  
500 MHz I/Q quadrature modulator and a 2.5 GHz mixer. tion also two pins for phase adjustment are provided.  
Both parts can be connected via an external filter in order These features and the double conversion concept of  
to suppress harmonics and spurious products. The device U2891B make this device perfectly suited for all digital  
features 3 V operation, a low current consumption and radio applications from 900 MHz up to 2.5 GHz (e.g.,  
furthermore two separate power-down functions for mod- GSM, DCS 1800, JDC, PHP and WLAN).  
Features  
Benefits  
D Low power consumption: 25 mA / 3 V  
D Extended talk time due to increased battery life  
(typical at –8 dBm output level)  
D Few external components results in cost and board  
D 2.5 GHz output frequency  
space saving  
D Excellent sideband suppression by means of duty D Adjustment free, hence saves time and cost  
cycle regeneration and 90° phase control  
D One TX Platform for different systems  
D Separate power-down mode for modulator and mixer  
D Reduced costs and space for battery (3-V operation)  
D Low LO input level: 10 dBm (typical)  
D LO and RF port 50-W single-ended  
Case: SSO-24 package  
Ordering Information:  
U2891B-AFS, U2891B-AFSG3 (see page 5)  
Block Diagram  
PD  
PD  
GND  
1
S
IF  
V
GND  
24  
IF  
RF  
S
6
14 13  
8, 21, 20  
2
3
BB  
BB  
Ai  
Voltage  
regulator  
Ai  
LO 1  
LO 1  
4
5
RF  
O
ö
Lo - Reg.  
f / 2 f  
0°  
ȍ
Control  
16  
90°  
50  
22  
23  
BB  
Bi  
BB  
Bi  
10,17  
GND  
12  
15  
S
19  
18  
7
11  
IF  
9
94 8141 e  
i
LP 1 LP 2  
IF  
O
IF  
i
LO2  
RF  
50  
Rev. A2: 04.10.1995  
1 (6)  
Advanced Information  
U2891B  
TELEFUNKEN Semiconductors  
Pin Description  
Pin  
1
2
3
4
5
6
7
8
Symbol  
GND  
Function  
Ground  
GND  
GND  
1
2
3
4
5
6
7
8
9
24  
23  
22  
21  
20  
BB  
BB  
Baseband input B inverse  
Baseband input B  
LO 1 input  
LO 1 input inverse  
Output symmetry IF  
IF output  
Ai  
Ai  
BB  
BB  
Ai  
Bi  
LO 1  
LO 1  
S
IF  
BB  
BB  
Ai  
Bi  
IF  
O
V
S
LO 1  
LO 1  
V
S
Supply voltage  
LO 2 input  
9
LO 2  
GND  
V
S
10  
11  
12  
13  
14  
15  
16  
17  
18  
Ground  
IF input  
IF  
IF  
i
LP 1  
LP 2  
GND  
S
IF  
IF input inverse  
Power-down RF  
Power-down IF  
Output symmetry RF  
RF output  
19  
18  
17  
i
PD  
RF  
IF  
PD  
O
IF  
S
RF  
V
S
RF  
O
GND  
LP 2  
Ground  
LO 2  
GND  
RF  
Filter and IF level  
adjustment  
Filter and IF level  
adjustment  
Supply voltage  
Supply voltage  
Baseband input B  
Baseband input B inverse  
Ground  
O
16  
15  
19  
LP 1  
S
RF  
10  
11  
12  
20  
21  
22  
23  
24  
V
V
S
IF  
PD  
14  
13  
i
IF  
S
BB  
BB  
Bi  
IF  
PD  
i
RF  
Bi  
94 8581 e  
GND  
Absolute Maximum Ratings  
Parameters  
Symbol  
V , V  
Value  
6
Unit  
V
Supply voltage  
Input voltage  
Pins 8, 20 and 21  
S
SRF  
Pins 2, 3, 4, 5, 9, 11, 12, 22 and 23  
V
0 to V  
125  
V
i
S
Junction temperature  
T
°C  
°C  
j
Storage temperature range  
T
stg  
40 to +125  
Operating Range  
Parameters  
Pins 8, 20 and 21  
Symbol  
Value  
Unit  
V
Supply voltage  
V , V  
2.7 to 5.5  
40 to +85  
S
SRF  
Ambient temperature range  
T
amb  
°C  
Thermal Resistance  
Parameters  
SSO-24  
Symbol  
Value  
140  
Unit  
K/W  
Junction ambient  
2 (6)  
R
thja  
Rev. A2: 04.10.1995  
Advanced Information  
U2891B  
TELEFUNKEN Semiconductors  
Electrical Characteristics: General Data  
Parameters  
Power supply  
Test Conditions / Pin  
Symbol  
V V  
Min.  
2.7  
Typ.  
25  
Max.  
5.5  
Unit  
Supply voltage range  
Supply current  
Pin 8, 20 and 21  
V
S, SRF  
Pin 8, 20 and 21, V = 3 V  
I , I  
S SRF  
mA  
S
Electrical Characteristics: I/Q Modulator  
Test conditions (unless otherwise specified): V = 3 V, T  
= 25°C, referred to test circuit.  
S
amb  
System impedance Zo = 50 W, f  
= 100 MHz, P  
= –10 dBm.  
LO1  
LO1  
Parameters  
Test Conditions / Pin  
= R  
Symbol  
Min.  
Typ.  
Max.  
Unit  
IF output  
Pin 7  
Output level  
LO1 suppression  
R
LP  
P
IFo  
– 8  
40  
dBm  
dB  
LO  
RFo  
Voltage standing wave ratio  
Sideband suppression  
VSWR  
1.4  
45  
2
IFo  
SBS  
dB  
IFo  
Baseband inputs Pins 2, 3, 22 and 23  
Input voltage range  
(differential)  
V
500  
150  
900  
200  
mVpp  
BBi  
Input impedance  
Input frequency  
Z
kW  
BBi  
f
MHz  
BBi  
LO1 input  
Pins 4 and 5  
Frequency range  
f
30  
500  
–2  
MHz  
dBm  
W
LOi  
1)  
Input level  
P
Z
10  
tbd.  
LOi  
iLO  
Input impedance  
Duty cycle range  
Power-down mode  
Supply current  
Settling time  
DCR  
0.4  
0.6  
LO1  
V
v 0.5 V Pin 14  
I
<5  
10  
mA  
ms  
PD  
PD  
C
C
100 pF,  
t
S
SPD  
= 100 pF, C  
= 1 nF  
LO  
RFo  
Power down voltage  
Pin 14  
“Power on”  
V = 3.5 to 5.5 V  
V = 2.7 to 3.5 V  
S
V
V
V – 0.5  
V +0.5  
V +0.5  
S
V
V
S
PON  
S
S
V
S
“Power down”  
1
V
PDN  
Power down current  
Power on  
Power down  
I
I
0.15  
< 1  
mA  
mA  
PON  
PDN  
Note:  
1
)
Required LO level is a function of the LO frequency  
Rev. A2: 04.10.1995  
3 (6)  
Advanced Information  
U2891B  
TELEFUNKEN Semiconductors  
Electrical Characteristics: Mixer  
V = 3 V, f  
= 800 MHz, f = 100 MHz, P  
= – 10dBm, system impedance Zo = 50 W, T  
= 25 °C, reference  
S
LO2  
IF  
LO2  
amb  
point Pin 10, unless otherwise specified  
Parameters  
Test Conditions / Pin  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Operating frequencies  
RF frequency  
Pin 16  
RF  
50  
50  
2500  
2500  
MHz  
MHz  
O
O
LO2 frequency  
Isolation  
Pin 9  
f
LO2  
LO2 spurious at RF  
Pin 9–16  
IS  
IS  
-
30  
tbd.  
dBm  
dB  
o
LO2 RFo  
P
iLO  
= 10 to 0 dBm  
RF to LO2  
Pin 16–9  
o
RFo-LO2  
Output level  
Output compression point  
Pin 16 R = R  
CP – 1 dB  
–7  
dBm  
Po  
o
Input level  
1)  
Input compression point  
Input LO2  
Pins 11 and 12  
Pin 9  
CP – 1dB  
–15  
–10  
–6  
dBm  
dBm  
dBm  
i
P
LO2  
iIIP3  
Third order input  
Pins 11 and 12  
P
1)  
intercept point  
Voltage standing wave ratio (VSWR)  
Input IF  
Pins 11 and 12  
VSWR  
tbd.  
tbd.  
tbd.  
9
IFi  
Input LO2  
Pin 9  
VSWR  
LO2  
Output RF  
Pin 16  
VSWR  
RF  
Conversion power gain  
R = 50 W  
L
PG  
dB  
dB  
C
2)  
Noise Figure (SSB)  
P
iLO  
= – 6 dBm  
NF50  
13  
Power-down mode  
Supply current  
Settling time  
V
v 0.5 V Pin 13  
I
<5  
10  
mA  
ms  
PD  
PD  
C
C
100 pF,  
t
S
SPD  
= 100 pF, C  
= 1 nF  
LO  
RFo  
Power down voltage  
Pin 13  
“Power on”  
V = 3.5 to 5.5 V  
V = 2.7 to 3.5 V  
S
V
V
V – 0.5  
V +0.5  
V +0.5  
S
V
V
S
PON  
S
S
V
S
“Power down”  
1
V
PDN  
Power down current  
Power on  
Power down  
I
I
0.15  
< 1  
mA  
mA  
PON  
PDN  
Note:  
1
)
with 50 W termination resistor at Pin 11  
without termination resistor  
2)  
4 (6)  
Rev. A2: 04.10.1995  
Advanced Information  
U2891B  
TELEFUNKEN Semiconductors  
Ordering Information  
Extended Type Number  
U2891B-AFS  
Package  
SSO24  
SSO24  
Remarks  
Rail, MOQ 690 pcs.  
Tape & reel, MOQ 4000 pcs.  
U2891B-AFSG3  
Dimensions in mm  
Package: SSO-24  
95 9943  
Rev. A2: 04.10.1995  
5 (6)  
Advanced Information  
U2891B  
TELEFUNKEN Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of  
continuous improvements to eliminate the use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain  
such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized  
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,  
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
6 (6)  
Rev. A2: 04.10.1995  
Advanced Information  

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