U2893B-FS [TEMIC]
Phase Locked Loop, PDSO28, SSO-28;
| 型号： | U2893B-FS |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Phase Locked Loop, PDSO28, SSO-28 过程控制系统 分布式控制系统 PCS GSM DCS |
| 文件： | 总14页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U2893B
Modulation PLL for GSM, DCS and PCS Systems
Description
The U2893B is a monolithic integrated circuit. It is tecture where the VCO is operated at the TX output
realized using TEMIC’s advanced silicon bipolar UHF5S frequency.
technology. The device integrates a mixer, an I/Q modu-
U2893B exhibits low power consumption, and the power-
lator, a phase-frequency detector (PFD) with two
down function extends battery life.
synchronous-programmable dividers, and a charge pump.
The U2893B is designed for cellular phones such as GSM, The IC is available in a shrinked small-outline 28–pin
DCS1800, and PCS1900, applying a transmitter-archi- package (SSO28).
Features
Benefits
High-level RF integration
Supply voltage down to 2.7 V
TX architecture saves filter costs
Low external part count
Current consumption 40 mA
Power-down function
Small SSO28 package
Low-current standby mode
High-speed PFD and charge pump
Integrated dividers
One device for various applications
Block Diagram
MDLO
PUMIX
I
MIXO
NI
Q
NQ
PU
MIXLO
RF
Voltage
reference
90
grd
MDO
NRF
Mixer
+
NMDO
I/Q modulator
VSP
CPO
MUX
N : 1
divider
ND
NND
PFD
RD
R : 1
divider
NRD
VS1
VS2
Mode
control
MC
VS3
12494
CPC
GND
GNDP
Figure 1. Block diagram
TELEFUNKEN Semiconductors
1 (14)
Rev. A1, 29-Jan-97
Preliminary Information
U2893B
Pin Description
Pin
1
2
3
4
5
6
7
8
Symbol
I
Function
In-phase baseband input
Complementary to I
I/Q-modulator LO input
Negative supply
I/Q-modulator output
Complementary to MDO
Positive supply (I/Q MOD)
Pos. supply charge-pump
Charge-pump output
Neg. supply charge pump
Charge-pump current control
(input)
Power-up, mixer only
R-divider input
Complementary to RD
Mode control
N-divider input
Complementary to ND
Negative supply
Power-up, whole chip except
mixer
Mixer LO input
Positive supply (MISC.)
Mixer RF-input
Complementary to RF
Negative supply
Q
1
2
3
4
5
6
7
8
9
I
NI
28
NI
NQ
27
26
MDLO
1)
GND
MDLO
GND
VS3
MDO
NMDO
3)
25
24
MIXO
VS1
VSP
CPO
GNDP
CPC
MDO
GND
NRF
9
10
11
2)
NMDO
23
22
21
12
13
14
15
16
17
18
19
PUMIX
RD
NRD
MC
VS1
VSP
RF
VS2
ND
NND
20
19
CPO
MIXLO
PU
1)
GND
GNDP
CPC
10
11
12
PU
18
17
16
15
GND
NND
ND
20
21
22
23
24
25
26
27
28
MIXLO
3)
VS2
PUMIX
RF
NRF
13
14
RD
1)
GND
MIXO
Mixer output
NRD
MC
3)
VS3
Positive supply (mixer)
Complementary to Q
Quad.-phase baseband input
12495
NQ
Q
Figure 2. Pinning
1)
2)
3)
All GND pins must be connected to GND
potential. No DC voltage between GND pins!
Max. voltage between GNDP and GND pins
200 mV
The maximum permissible voltage difference
between pins VS1, VS2 and VS3 is 200 mV.
2 (14)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
U2893B
Absolute Maximum Ratings
Parameters
Supply voltage VS1, VS2, VS3
Supply voltage charge pump VSP
Voltage at any input
Symbol
Value
V
5.5
V +0.5 5.5
VS
Unit
V
V
VS#
VSP
V
VSP
V
V
V
Vi#
–0.5
Current at any input / output pin
except CPC
| I | | I
|
2
mA
I#
O#
CPC output currents
Ambient temperature
Storage temperature
| I
T
T
|
5
mA
°C
°C
CPC
–20 to +85
–40 to +125
amb
stg
Operating Range
Parameters
Supply voltage
Ambient temperature
Symbol
Value
2.7 to 5.5
–20 to +85
Unit
V
°C
V
, V
VS#
VSP
T
amb
Thermal Resistance
Parameters
Junction ambient SSO28
Symbol
R
thJA
Value
130
Unit
K/W
Electrical Characteristics: General Data
T
amb
= 25°C, V = 2.7 to 5.5 V
S
Parameters
DC supply
Supply voltages VS#
Supply voltage VSP
Test Conditions / Pin
= V = V
Symbol
Min.
2.7
Typ.
Max.
Unit
V
VS1
V
V
5.5
5.5
V
V
VS2
VS3
VS#
V
VS#
VSP
– 0.3
Supply current I
Supply current I
Supply current I
Supply current I
Active (V = VS)
I
I
I
I
I
I
I
16
21
11
mA
A
mA
A
mA
A
mA
VS1
VS2
VS3
VSP
PU
VS1A
VS1Y
VS2A
VS2Y
VS3A
VS3Y
VSPA
Standby (V = 0)
20
20
PU
Active (V = VS)
PU
Standby (V = 0)
PU
Active (V
= VS)
PUMIX
Standby (V
Active
= 0)
30
20
PUMIX
1)
2)
(V = VS, CPO open)
PU
Standby (V = 0)
I
20
A
PU
VSPY
N & R divider inputs ND, NND & RD, NRD
N:1 divider frequency
R:1 divider frequency
Input impedance
50- source
50- source
Active & standby
50- source
F
F
100
100
1 kΩ
30
650
400
2 pF
200
MHz
MHz
–
ND
RD
Z
, Z
, V
RD ND
Input sensitivity
V
mV
RDeff
NDeff
1)
100-MHz PFD operation, pump current set to 4 mA, zero phase difference (steady state)
See chapter “Supply Current of the Charge Pump i(VSP) vs. Time”, page 6.
2)
TELEFUNKEN Semiconductors
3 (14)
Rev. A1, 29-Jan-97
Preliminary Information
U2893B
Electrical Characteristics: General Data (continued)
T
amb
= 25°C, V = 2.7 to 5.5 V
S
Parameters
Phase-frequency detector (PFD)
PFD operation
Test Conditions / Pin
Symbol
FM
Min.
Typ.
Max.
Unit
F
F
F
F
= 650 MHz, n = 5
= 300 MHz, r = 2
150
200
MHz
MHz
ND
RD
PFD
Frequency comparison
only
= 650 MHz, n = 5
= 300 MHz, r = 2
FM
FD
ND
RD
I/Q modulator baseband inputs I, NI & Q, NQ
DC voltage
Referred to GND
V V
V
V
1.35
DC
VS1/2 VS1/2
+ 0.1
V
I, NI, Q, NQ
MD_IQ
AC voltage
Frequency range
Referred to GND
FR
1
MHz
mVpp
IO
3)
AC AC
200
I,
NI,
AC AC
Q,
NQ
Differential (preferres)
AC AC
400
mVpp
DI,
DQ
I/Q modulator LO input MDLO
MDLO
Input impedance
Input level
Frequency range
Active & standby
50- source
F
Z
P
50
350
250
MHz
W
dBm
MDLO
MDLO
MDLO
–12
–5
I/Q modulator outputs MDO, NMDO
DC current
Voltage compliance
MDO output level
(differential)
Carrier suppression
V
V
, V
, V
= VS
= VC
I
, I
MDO NMDO
2.4
mA
mV
MDO
NMDO
VC
, VC
MDO
NMDO
4)
MDO
NMDO
MDOeff
500 to VS
P
120
150
4)
CS
SS
SP
–30
–35
–45
–115
50
–35
–40
–50
dBc
dBc
dBc
dBc/Hz
MHz
MDO
MDO
MDO
MDO
4)
Sideband suppression
IF spurious
4)
f_LO +/– 3 f_mod
@ 400 kHz off carrier
4)
Noise
N
Frequency range
Mixer (900 MHz)
RF input level
LO-spurious at
RF/NRF port
MIXLO input level
MIXO (100- load)
... Output level
FR
350
MDO
900 MHz
@ P9
@ P9 = –15 dBm
0.05 to 2 GHz
Frequency range
@ P9
@ P9
P9
tbd
–15
dBm
dBm
RF
= –10 dBm
SP9
–40
350
MIXLO
RF
RF
P9
tbd
50
–10
70
dBm
MHz
mV
MIXLO
FR
MIXO
5)
= –15 dBm
= –15 dBm
P9
MIXOeff
MIXLO
MIXLO
... Carrier suppression
CS9
–20
dBc
MIXO
3)
Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity degrading
suppression of odd harmonics
4)
5)
With typical drive levels at MDLO- & I/Q-inputs
–1 dB compression point (CP-1)
4 (14)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
U2893B
Electrical Characteristics: General Data (continued)
T
amb
= 25°C, V = 2.7 to 5.5 V
S
Parameters
Mixer (1900 MHz)
RF input level
LO-spurious at
RF/NRF ports
Test Conditions / Pin
Symbol
Min.
Typ.
–17
Max.
–40
Unit
0.5 to 2 GHz
P19
dBm
dBm
RF
@ P19
= –10 dBm
SP19
RF
MIXLO
@ P19 = –15 dBm
RF
MIXLO input level
MIXO (100 load)
... Output level
... Carrier suppression
Charge pump output CPO
Pump current pulse
0.05 to 2 GHz
P19
–8
55
dBm
MIXLO
5)
@ P19
@ P19
= –17 dBm
= –17 dBm
P19
CS19
mVeff
dBc
MIXLO
MIXO
–20
MIXLO
MIXO
CPC open
2.23 kΩ CPC to GND
760 Ω CPC to GND
| I
CPO
|
0.8
1.6
3.6
1
2
4
1.2
2.4
4.4
15
mA
mA
mA
%/100 k
%
| I
| I
|
|
CPO 2
CPO_4
TK pump current
Mismatch source / sink
current
Tk_| I
M
ICPO
|
CPC
(I
– I
)/I
10
CPOSI
CPOSO CPOSI
I
I
= I
CPOSO
sourc
= I
CPOSI
sink
Sensivity to VSP
S
ICPO
0.1
–
ICPO
ICPO
VSP
VSP
|
|
|
|
Charge pump control input CPC
Compensation capacitor
C
500
2
pF
mA
CPC
6)
Short circuit current
Mode control
Sink current
Power-up input PU (power-up for all functions, except mixer)
Settling time
CPC grounded
= VS
| I
CPCK
|
2.7
20
5
3.7
10
V
MC
I
A
s
MC
Output power within
10% of steady state
values
S
PU
High level
Low level
High-level current
Low-level current
Active
Standby
Active, V
Standby, V
V
2.5
0
0.1
–10
V
V
mA
mA
PUH
V
0.4
0.6
0
PUL
PUH
= 2.7 V
I
PUH
= 0.4 V
I
PUL
PUL
Power-up input PUMIX (power-up for mixer only)
Settling time
Output power within
10% of steady state
values
5
10
s
High level
Low level
High-level current
Low-level current
Active
Standby
Active, V
Standby,
V
2.5
0
0.1
–10
V
V
mA
mA
PUMIXH
V
0.4
0.6
0
PUMIXL
PUMIXH
= 2.7 V
I
PUMIXH
I
PUMIXL
V
= 0.4 V
PUMIXL
6)
See figures 6 and 14.
TELEFUNKEN Semiconductors
5 (14)
Rev. A1, 29-Jan-97
Preliminary Information
U2893B
Supply Current of the Charge Pump
i(VSP) vs. Time
Initial Charge Pump Current after
Power-Up
Due to the pulsed operation of the charge pump, the cur- Due to stability reasons, the reference current generator
rent into the charge-pump supply pin VSP is not constant. for the charge pump needs an external capacitor (>500 pF
Depending on I (see figure 6) and the phase difference at from CPC to GND). After power-up, only the on-chip
the phase detector inputs, the current i(VSP) over time va- generated current I = I
is available for charging the
CPCK
ries. Basically, the total current is the sum of the quiescent external capacitor. Due to the charge pump’s architecture,
current, the charge-/discharge current, and – after each the charge pump current will be 2 I = 2
until
I
CPCK
phase comparison cycle – a current spike (see figure 3).
the voltage on CPC has reached the reference voltage
(1.1 V). The following figures illustrate this behavior.
The behavior of I(CPO) after power-up can be very
advantageous for a fast settling of the loop. By using
larger capacitors (>1 nF), an even longer period with
maximum charge pump current is possible.
up
down
V(CPC)
I
R
CPC
CPCK
5I
i(VSP)
3I
I
t
Vref
2I
i(CPO)
t
t
t
t
t
–2I
1
0
2
Figure 3. Supply current of the charge pump = f(t)
Internal current, I, vs. current out of pin CPC
I(CPC)
I
CPCK
2
I vs. I(CPC)
CPC open
ICPC
0
I
0.5 mA
1.0 mA
2.0 mA
>2.0 mA
2.23 kW to GND
743 W to GND
–0.5 mA
–1.5 mA
I
CPC shorted to GND
I
CPCK
t
t
1
Time t can be calculated as t
(1.1 V
C )/I
CPC CPCK
1
1
e.g., C
= 1 nF, I
= 3.5 A
t
(R
0.3 s.
/2230
CPC
max
1
Time t can be calculated as t
)
C
CPC
2
2
CPC
e.g., C
= 1 nF, R
= 2230
t
2
1.1 s
CPC
CPC
Figure 4.
6 (14)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
U2893B
Mode Selection
The device can be programmed to different modes via an external resistor (including short, open) connected between
Pin MC and VS2. The mode selection controls the N-, R-divider ratios, and the polarity of the charge pump current.
Mode Selection
N-Divider
R-Divider
CPO Current Polarity
Application
1)
1)
Mode
Resistance between Pin MC
and Pin VS2
f < f
f < f
N R
N
R
1
2
3
4
5
0 (<50
)
3:1
2:1
2:1
3:1
3:1
5:1
5:1
6:1
6:1
6:1
Sink
Source
Sink
GSM
PCS
2.7 k (±5%)
10 k (±5%)
36 k (±5%)
(>1 M )
Source
Source
Source
Sink
Sink
DCS
GSM
GSM
Sink
Source
1)
Frequencies referred to PFD input!
Equivalent Circuits at the IC’s Pins
VS1
Vbias_MDLO
MDO
NMDO
2230
2230
250
I, Q
MDLO
NI, NQ
Vref_MDLO
Vref_output
Vref_input
30p
GND
Baseband input
LO input
Output
Figure 5. I/Q modulator
VS3
Vbias_RF
1k
1k
Vbias_LO
RF
890
890
1.6k
1.6k
40p
MIXLO
NRF
6.3
MIXO
GND
Vref_RF
Vref_LO
RF input
LO input
Output
Figure 6. Mixer
TELEFUNKEN Semiconductors
7 (14)
Rev. A1, 29-Jan-97
Preliminary Information
U2893B
VS2
4
VSP
4
ICPCK /4
4
I
m
CPC
2I
up
down
CPO
ref
ref
1.1 V
2I
2230
2
2
GNDP
GND
= Transistor with an emitter area-factor of n
n
Figure 7. Charge pump
VS2
20k
PU, PUMIX
ND/RD
2k
2k
GND
NND/NRD
Figure 9. Power-up
Vref_div
GND
Figure 8. Dividers
VS2
C (U)
@
2.5 pF
2 V
N-divider
R-divider
MUX
Figure 11. ESD-protection diodes
MC
60
A
GND
Figure 10. Mode control
8 (14)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
U2893B
Application Hints
For some of the baseband ICs it may be necessary to
reduce the I/Q voltage swing so that it can be handled by
the U2893B. In those cases, the following circuitry can be
used.
U2893B
CPC
GND
R1 = 2230 R
R2 = 1160 R (incl. rds_on of FET)
R1 R2
R1
I
I
1 nF
4 mA
R2
R2
R1
R1
R1
NI
Q
NI
Q
Baseband IC
U2893B
2 mA
12497
Figure 14. Programming the charge pump current
NQ
NQ
12496
Figure 12. Interfacing the U2893B to I/Q baseband circuits
Application examples for programming different modes.
U2893B
VS2
U2893B
VS2
MC
MC
RMODE 1
RMODE 2
a) single mode
b) any mode & mode 5
U2893B
VS2
U2893B
VS2
MC
MC
RMODE
36k or
10k
c) any mode
d) mode 5 & mode 3 or mode 4
Figure 13. Mode control
TELEFUNKEN Semiconductors
9 (14)
Rev. A1, 29-Jan-97
Preliminary Information
U2893B
Test Circuit
<450 mV
pp
<450 mV
pp
VAC
VDC
VAC
VDC
Baseband inputs
1.35 V –
VS1/2 + 0.1 V
1.35 V –
VS1/2 + 0.1 V
1
2
3
4
5
28
27
26
25
24
23
22
21
20
19
18
17
16
15
I
Q
NQ
NI
50
Modulator
LO input
VS3
MDLO
GND
MDO
NMDO
VS1
VS
Mixer
output
MIXO
GND
NRF
RF
Modulator
outputs
6
7
50
50
50
Mixer
input
VS
VSP
VDO
8
9
10
VSP
VS2
VS
50
Mixer
LO input
CPO
MIXLO
PU
PFD
Pulse output
GNDP
CPC
1 n
11
12
13
GND
NND
ND
PUMIX
RD
PFD input
PFD input
14
50
50
NRD
MC
Mode control
VS2
Power-up
Bias voltage for
charge pump output:
VS
R1
R2
R3
13315
0.5 V < VDO < VSP – 0.5 V
Figure 15. Test circuit
10 (14)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
U2893B
Application Circuit (900 MHz)
Baseband processor
27n
12p
LO (–10 dBm)
1192 MHz
12p
2.7 to 3.5 V
MIXO
Mixer
MIXLO
RF
PUMIX PU
NI
NQ
Q
MDLO
I
Dr
Dr
Voltage
reference
90
grd
50
390
4.7p
MDO
NRF
To PA
6 dB
attn.
NMDO
+
I/Q modulator
47nH
VCO MQE 550
VSP
CPO
ND
2.7
to 3.5 V
MUX
N : 1
divider
NND
10
1k
PFD
RD
3.3n
390
R : 1
divider
f_Ref
= 55 mV
68p
50
v
rms
VS1
VS2
NRD
2.7 to 3.5 V
U2893B
Mode
control
MC
VS3
13316
GNDP
GND
CPC
Figure 16. Power-up, charge pump control, and mode control must be connected according to the application used
TELEFUNKEN Semiconductors
11 (14)
Rev. A1, 29-Jan-97
Preliminary Information
U2893B
Measurements
Modulation-Loop Settling Time
Modulation Spectrum & Phase Error
The figure of the TX spectrum and the phase error dis-
tribution, respectively, shows the suitability of the
modulation-loop concept for GSM.
As valid for all PLL loops the settling time depends on
several factors. The following figure is an extraction from
measurements performed in an arrangement like the ap-
plication circuit. It shows that a loop settling time of a few Vertical: VRef. level = 28.6 dBm, 10 dBm/Div
s can be achieved.
Horizontal: Center = 900 MHz, VBW, RBW = 30 kHz,
400 kHz/Div
CPC: 1 kΩ to GND
CPC ‘open’
Vertical: VCO tuning voltage 1 V/Div
Horizontal: Time 1 s/Div
Figure 17.
Figure 18.
Figure 19.
12 (14)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
U2893B
Package Information
5.7
5.3
Package SSO28
Dimensions in mm
9.10
9.01
4.5
4.3
1.30
0.15
0.15
0.05
0.25
0.65
6.6
6.3
8.45
28
15
technical drawings
according to DIN
specifications
13018
1
14
TELEFUNKEN Semiconductors
13 (14)
Rev. A1, 29-Jan-97
Preliminary Information
U2893B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
14 (14)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
相关型号：
©2020 ICPDF网 联系我们和版权申明