TX5304 [TAOS]
Standard SRAM, 128KX16, 100ns, CMOS, CPGA50, 0.100 INCH PITCH, CERAMIC, PGA-50;
| 型号： | TX5304 |
| 厂家： | 
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
| 描述： | Standard SRAM, 128KX16, 100ns, CMOS, CPGA50, 0.100 INCH PITCH, CERAMIC, PGA-50 静态存储器 内存集成电路 |
| 文件： | 总6页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Texas Components Corporation TX5304
2- Megabit (128K X 16) High-Temperature Static RAM
FEATURES
APPLICATIONS
•
Operation to 200°C
Popular 50-pin PGA footprint
Single 5 V supply
Robust Geometry
Access time : 100 ns at rated temperature
Completely static memory
(128K x 16 bit) or (2 128K x 8 bit) organization
Tri-state output
•
•
•
High Temperature Digital Systems
Petroleum LWD and MWD tools
Petroleum reservoir monitoring
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DESCRIPTION
The TX5304 is a CMOS static RAM organized as 131,072 x 16-bit words. The device is packaged
in a proprietary 50-pin ceramic PGA package employing the 5 x 10 pin footprint with a pitch of 0.1
inch. Powered by a single +5 V supply, the unit offers low standby power dissipation and is
suitable for battery backup systems. Three optional access times are available; output lines are
tri-state; power consumption can be minimized through use of the data retention mode.
The TX5304 is composed of two individual SRAM modules, each with 128K x 8-bit memory.
Each module has private enable/select lines permitting store/ access of either 8-bit or 16-bit data.
FUNCTIONAL BLOCK DIAGRAM
ADDR [ 0.. 16 ]
OE
WE
Memory 1
128K X 8 SRAM
Memory 2
128K X 8 SRAM
CS11
CS21
CS12
CS22
I/O [ 8..15 ]
I/O [ 0..7 ]
Copyright 2007 Texas Components Corporation
www.texascomponents.com
October 10, 2007
Texas Components Corporation TX5304
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Supply Voltage relative to Vss
Vcc
VT
-0.5 to + 5.5
V
V
Voltage on any pin relative to Vss
-0.5 to Vcc + 0.5
Operating Temperature Range
Storage Temperature Range
Topr
Tstg
-55 to + 200
-55 to + 200
ºC
ºC
RECOMMENDED DC OPERATING CONDITIONS (Topr = 0 to +125ºC)
Parameter
Symbol
Min
Max
Unit
Supply Voltage
Vcc
Vss
VIH
VIL
4.5
0
5.5
V
V
V
V
0
Input High Voltage
Input Low Voltage
2.2
-0.5
VCC + 0.2
0.8
DC OPERATING CHARACTERISTICS (Topr = 0 to +70ºC)
Parameter
Symbol
Typ
Unit
Input Leakage Current
Output Leakage Current
IIN
2.0
2.0
µA
µA
IOUT
Operating Supply Current
Standby Supply Current
Data Retention Supply Current
Vcc = 3.0
ICC
70
mA
mA
ISB1
4.0
IDR
0.2
0.2
0.4
2.4
uA
uA
V
Vcc = 2.0
IDR
Output Voltage Low
Output Voltage High
VOL
VOH
V
TRUTH TABLE
Mode
For 128K x 16 bit operation
CS21/CS22
CS11/CS12
*WE
*OE
I/O Pin Supply Current
Not Selected
Not Selected
Output Disable
Read
L
X
H
L
X
X
H
H
L
X
X
H
L
High-Z
Standby
Standby
Active
X
H
H
H
High-Z
High-Z
L
Data Output
Data Input
Active
Write
L
X
Active
H = High Voltage, L = Low Voltage, X = Don’t Care
Copyright 2007 Texas Components Corporation
www.texascomponents.com
October 10, 2007
Texas Components Corporation TX5304
Low VCC Data Retention Characteristics
Parameter
Symbol
Typ
Unit
VCC for data retention
VDR
1.5
V
Chip deselect to data retention time
Operation recovery time
tCDR
tRc
0
ns
ns
100
( CS11/CS21 Controlled )
Low Vcc Data Retention Timing (
Tcdr
Data Retention Mode
Tr
Vcc
4.5V
2.2V
Vdr1
_________
CS11/CS12
CS1 > Vcc - 0.2V
CS11/CS12 > Vcc - 0.2V
0V
( CS21/CS22 Controlled )
Low Vcc Data Retention Timing
Tcdr
Data Retention Mode
Tr
Vcc
4.5V
CS21/CS22
Vdr2
0.4V
0V
CS21/CS22 < 0.2V
Copyright 2007 Texas Components Corporation
www.texascomponents.com
October 10, 2007
Texas Components Corporation TX5304
AC OPERATING CHARACTERISTICS – READ CYCLE
Parameter
Symbol
Min
Max
Unit
Notes
Read Cycle time
tRC
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
tAA
tCO
tOE
tLZ
100
100
50
Chip selecton to output valid
Output enable to output valid
Chip selection to output in low-Z
Output enable to output in low-Z
Output enable to output in high-Z
Output disable to output in high-Z
Output hold from address change
10
10
tOZ
tHZ
tOHZ
tOH
40
35
10
Trc
Read Timing Waveforms
WE is high for read cycle
Address
Address Valid
Taa
_________
CS11/CS12
Tco1
Thz1
Tlz1
Tlz2
Tcc2
CS21/CS22
Thz2
Tohz
OE
Toe
Tolz
Toh
Hi Z
Dout
Data Valid
AC OPERATING CHARACTERISTICS – WRITE CYCLE
Parameter
Symbol
Typ
Max
Unit
Notes
Write Cycle time
tWC
tCW
tAS
100
100
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip selection time
Address setup time
Address valid to end of write
Write pulse width
tAW
tWP
tWR
tWHZ
tDW
tDH
100
50
0
Write recovery time
Write to output in High-Z
Data to write time overlap
Data hold from write time
Output active from end of write
Output disable to output in High-Z
25
40
0
30
30
tOW
tOHZ
5
5
Copyright 2007 Texas Components Corporation
www.texascomponents.com
October 10, 2007
Texas Components Corporation TX5304
Write Timing Cycle (1)
OE Clock
Twc
Address
Address Valid
Taw
OE
Tcw
Twp
_________
CS11/CS12
Twr
CS21/CS22
Tas
WE
Tohz
Hi Z
Tow
Dout
Din
Toh
Data Valid
Write Timing Cycle (2)
OE low fixed
Twc
Address
Address Valid
Tcw
Twr
_________
CS11/CS12
CS21/CS22
Taw
Twp
WE
Toh
Tas
Tow
Tdh
Twhz
Dout
Din
Tdw
Hi Z
Data Valid
Copyright 2007 Texas Components Corporation
www.texascomponents.com
October 10, 2007
Texas Components Corporation TX5304
PACKAGE INFORMATION:
A
B
C
D
E
____
1
N.C.
Vss
N.C.
A14
A6
N.C.
N.C.
A16
A12
A5
N.C.
N.C.
N.C.
CS22
CS21
A8
CS12
2
Vcc
___
3
WE
A15
A13
A9
4
A7
___
5
OE
A11
____
6
A4
A3
A2
CS11
A10
I/O11
I/O14
Vcc
7
A1
A0
I/O13
I/O8
I/O3
I/O4
I/O12
I/O15
I/O5
8
I/O10
Vss
I/O0
I/O9
I/O1
I/O2
9
10
I/O6
I/O7
WARNING! Static Sensitive Device.
The TX5304 is a hybrid network that includes several sensitive components. These components
can be damaged or destroyed by discharge of static electricity. The discharge of static electricity
is commonly referred to as Electrostatic Discharge (ESD).
The TX5304 can be protected from ESD by the following common procedures used with discrete
semiconductors, namely:
1. Always store units in closed conductive containers
2. All personnel that handle units must wear static dissipative outer garments and must
be electrically grounded
3. Always use a grounded soldering iron when making electrical connections
4. Worktables must have grounded dissipative covering.
ESD can cause subtle problems that have longer term, damaging affect.
Copyright 2007 Texas Components Corporation
www.texascomponents.com
October 10, 2007
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