LS103B [SUNMATE]
1A Patch Schottky diode 30V SOD-80 series;
| 型号： | LS103B |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1A Patch Schottky diode 30V SOD-80 series 二极管 |
| 文件： | 总2页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS103A - LS103C
SMALL SIGNAL SCHOTTKY BARRIER DIODES
Features
Integrated protection ring against static discharge
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!
Low capacitance
C
!
!
Low leakage current
Low forward voltage drop
B
A
Mechanical Data
!
Case: SOD-80/LL34, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
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!
!
!
LL34/ SOD-80
Dim
A
Min
3.30
1.30
0.28
Max
3.70
1.60
0.50
Polarity: Cathode Band
Weight: 0.05 grams (approx.)
B
C
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
40
Unit
V
Reverse voltage
LS103A
V
V
V
R
R
R
LS103B
LS103C
30
20
V
V
Peak forward surge current
Power dissipation
t = 300 µs, square pulse
I
15
A
p
FSM
l = 4 mm, T = constant
P
400
mW
L
tot
Thermal Characteristics
@ TA = 25°C unless otherwise specified
Parameter
Test condition
l = 4mm, T = constant
Symbol
Value
250
Unit
Junction ambient
R
K/W
°C
L
thJA
Junction temperature
Storage temperature range
T
125
j
T
- 65 to + 150
°C
stg
Electrical Characteristics
Parameter
Test condition
= 10 µA
Part
Symbol
Min
Typ.
Max
Unit
V
Reverse Breakdown Voltage
I
LS103A
LS103B
LS103C
LS103A
LS103B
LS103C
V
40
30
20
R
(BR)R
V
V
V
V
(BR)R
(BR)R
Leakage current
V
V
V
= 30 V
= 20 V
= 10 V
I
5
5
µA
µA
µA
V
R
R
R
R
I
R
I
5
R
Forward voltage drop
I = 20 mA
V
V
C
0.37
0.6
F
F
F
D
I = 200 mA
V
F
Diode capacitance
V
= 0 V, f = 1 MHz
50
10
pF
ns
R
Reverse recovery time
I = I = 50 to 200 mA,
t
rr
F
R
recover to 0.1 I
R
1 of 2
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1000
5
4
3
2
1
0
100
10
1
0.1
0.01
0.001
0
100 200 300 400 500 600 700 800 900 1000
– Forward Voltage ( mV )
0.0
0.5
1.0
V – Forward Voltage ( V )
F
1.5
2.0
16765
V
F
16766
Fig. 2 Forward Current vs. Forward Voltage
Fig. 1 Forward Current vs. Forward Voltage
10000
1000
100
10
30
f=1MHz
25
20
15
10
5
1
0
0
20 40 60 80 100 120 140 160
0
5
10
V – Reverse Voltage ( V )
R
15
20
25
30
°
T – Junction Temperature ( C )
j
16767
16768
Fig. 3 Reverse Current vs. Junction Temperature
Fig. 4 Diode Capacitance vs. Reverse Voltage
25
20
15
10
5
0
0.1
1.0
10.0
t
p
– Pulse width ( ms )
16769
Fig. 5 Typ. Non Repetitive Forward Surge Current vs. Pulse width
2 of 2
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