LS103C-GS18 [VISHAY]
Small Signal Schottky Barrier Diodes; 小信号肖特基势垒二极管
| 型号： | LS103C-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Barrier Diodes |
| 文件： | 总5页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS103A / 103B / 103C
VISHAY
Vishay Semiconductors
Small Signal Schottky Barrier Diodes
Features
• Integrated protection ring against static discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
9612009
Applications
HF-Detector
Protection circuit
Small battery charger
AC-DC / DC-DC converters
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
= 40 V, V @ I 20 mA max. 0.37 V
Ordering code
Remarks
LS103A
V
V
V
LS103A-GS18 or LS103A-GS08
Tape and Reel
R
R
R
F
F
LS103B
LS103C
= 30 V, V @ I 20 mA max. 0.37 V
LS103B-GS18 or LS103B-GS08
LS103C-GS18 or LS103C-GS08
Tape and Reel
Tape and Reel
F
F
= 20 V, V @ I 20 mA max. 0.37 V
F
F
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Part
Symbol
Value
Unit
V
Reverse voltage
LS103A
V
V
V
40
30
R
R
R
LS103B
LS103C
V
V
20
Peak forward surge current
Power dissipation
t = 300 µs, square pulse
I
15
A
p
FSM
l = 4 mm, T = constant
P
400
mW
L
tot
Document Number 85631
Rev. 1.2, 22-Apr-04
www.vishay.com
1
LS103A / 103B / 103C
Vishay Semiconductors
VISHAY
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
250
Unit
K/W
Junction ambient
l = 4mm, T = constant
R
thJA
L
Junction temperature
Storage temperature range
T
125
°C
°C
j
T
- 65 to + 150
stg
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
= 10 µA
Part
Symbol
Min
Typ.
Max
Unit
V
Reverse Breakdown Voltage
I
LS103A
LS103B
LS103C
LS103A
LS103B
LS103C
V
40
30
20
R
(BR)R
V
V
V
V
(BR)R
(BR)R
Leakage current
V
V
V
= 30 V
= 20 V
= 10 V
I
5
5
µA
µA
µA
V
R
R
R
R
I
R
I
5
R
Forward voltage drop
I
I
= 20 mA
V
V
C
0.37
0.6
F
F
F
F
D
= 200 mA
V
Diode capacitance
V
= 0 V, f = 1 MHz
50
10
pF
ns
R
Reverse recovery time
I
= I = 50 to 200 mA,
t
rr
F
R
recover to 0.1 I
R
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
5
4
3
2
1
0
100
10
1
0.1
0.01
0.001
0
100 200 300 400 500 600 700 800 900 1000
– Forward Voltage ( mV )
0.0
0.5
1.0
1.5
2.0
16765
V
F
16766
V – Forward Voltage ( V )
F
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Forward Current vs. Forward Voltage
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2
Document Number 85631
Rev. 1.2, 22-Apr-04
LS103A / 103B / 103C
VISHAY
Vishay Semiconductors
10000
1000
100
10
1
0
20 40 60 80 100 120 140 160
°
T – Junction Temperature ( C )
j
16767
Fig. 3 Reverse Current vs. Junction Temperature
30
f=1MHz
25
20
15
10
5
0
0
5
10
V – Reverse Voltage ( V )
R
15
20
25
30
16768
Fig. 4 Diode Capacitance vs. Reverse Voltage
25
20
15
10
5
0
0.1
1.0
10.0
t
p
– Pulse width ( ms )
16769
Fig. 5 Typ. Non Repetitive Forward Surge Current vs. Pulse width
Document Number 85631
Rev. 1.2, 22-Apr-04
www.vishay.com
3
LS103A / 103B / 103C
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
Cathode indification
(0.07)
1.7
Glass
Glass
> R 3 (R 0.12)
0.47 max. (0.02)
3.5 0.2 (0.14 0.008)
Mounting Pad Layout
2.50 (0.098) max
1.25 (0.049) min
ISO Method E
Glass case
Quadro Melf / SOD 80
JEDEC DO 213 AA
5 (0.197) ref
96 12071
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4
Document Number 85631
Rev. 1.2, 22-Apr-04
LS103A / 103B / 103C
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85631
Rev. 1.2, 22-Apr-04
www.vishay.com
5
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