ESH1D [SUNMATE]
1A patch fast recovery diode 200V SMA series;
| 型号： | ESH1D |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1A patch fast recovery diode 200V SMA series |
| 文件： | 总2页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESH1B - ESH1D
SURFACE MOUNT ULTRAFAST PLASTIC RECTIFIER DIODES
VOLTAGE RANGE: 100 - 200V
CURRENT: 1.0 A
Features
Low profile package
!
!
Ideal for automated placement
Glass passivated chip junction
Ultrafast recovery times for high efficiency
Low forward voltage, low power loss
!
!
!
B
SMA(DO-214AC)
Mechanical Data
Dim
MinMax
A
B
C
D
E
G
H
J
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
!
!
Case: SMA(DO-214AC)Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
A
J
C
!
D
!
!
Polarity: Cathode Band or Cathode Notch
Approx. Weight: SMA 0.064 grams
G
H
E
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol
ESH1B
ESH1C
ESH1D
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
70
150
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
105
1.0
V
A
Average Rectified Output Current
@TL = 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.90
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
1.0
25
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
25
25
nS
pF
RꢀJL
Tj, TSTG
30
°C/W
°C
Operating and Storage Temperature Range
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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(T = 25 °C unless otherwise noted)
RATINGS AND CHARACTERISTICS CURVES
A
1.2
1.0
0.8
0.6
50
40
30
20
10
0
TL Measured
0.4
at the Cathode Band Terminal
0.2
0
95
105
115
125
135
145
155
165
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
10
0.1
0.01
TJ = 125 °C
0.001
1
20
40
60
80
100
0.1
1
10
100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Reverse Leakage Characteristics
Figure 5. Typical Junction Capacitance
100
100
10
1
TJ = 125 °C
10
TJ = 150 °C
TJ = 175 °C
1
TJ = 25 °C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal Impedance
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