TS271AID [STMICROELECTRONICS]
CMOS Programmable Low Power Single Operational Amplifier; CMOS可编程低功耗单路运算放大器
| 型号： | TS271AID |
| 厂家： | 
ST |
| 描述： | CMOS Programmable Low Power Single Operational Amplifier |
| 文件： | 总17页 (文件大小：608K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS271
CMOS Programmable
Low Power Single Operational Amplifier
■
Offset null capability (by external
compensation)
■
■
Dynamic characteristics adjustable I
SET
Consumption current and dynamic
parameters are stable regarding the
voltage power supply variations
N
DIP8
(Plastic Package)
■
■
Output voltage can swing to ground
Very large I
range
SET
■
■
Stable and low offset voltage
Three input offset voltage selections
Description
D
SO-8
The TS271 is a low cost, low power single
operational amplifier designed to operate with
single or dual supplies. This operational amplifier
uses the ST silicon gate CMOS process giving it
an excellent consumption-speed ratio. This
amplifier is ideally suited for low consumption
applications.
(Plastic Micropackage)
Pin Connections (top view)
1
2
3
4
8
7
6
5
The power supply is externally programmable with
a resistor connected between pins 8 and 4. It
allows to choose the best consumption-speed
ratio and supply current can be minimized
according to the required speed. This device is
-
+
specified for the following I
1.5µA, 25µA, 130µA.
current values:
SET
1 - Offset Null 1
2 - Inverting Input 1
3 - Non-inverting Input 1
This CMOS amplifier offers very high input
impedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature see
Figure 8, Figure 19, Figure 30.
-
4 - V
CC
5 - Offset Null 2
6 - Output
+
7 - VCC
8 - ISet
Order Codes
Part Number
TS271CN/ACN
Temperature Range
Package
Packaging
DIP
SO
DIP
SO
SO
Tube
Tube and Tape & Reel
Tube
0°C, +70°C
TS271CD/CDT/ACD/ACDT
TS271IN/AIN/
-40°C, +125°C
-55°C, +125°C
TS271ID/IDT/AID/AIDT/BID/BIDT
TS271BMD
Tube and Tape & Reel
Tube
March 2005
Revision 2
1/17
TS271
Block Diagram
1 Block Diagram
Figure 1. Application block diagram
2/17
Absolute Maximum Ratings
TS271
2 Absolute Maximum Ratings
Table 1. Key parameters and their absolute maximum ratings
Symbol
Parameter
TS271C/AC/BC
TS271I/AI/BI
TS271M/AM/BM
Unit
V
+
1
18
18
VCC
Supply Voltage
2
Vid
V
Differential Input Voltage
3
V
-0.3 to 18
30
V
Input Voltage
i
+
I
mA
Output Current for V
≥ 15V
o
CC
I
Input Current
5
mA
°C
in
T
Operating Free-Air Temperature Range
Storage Temperature Range
0 to +70
-40 to +125
-65 to +150
-55 to +125
oper
T
°C
stg
1) All values, except differential voltage are with respect to network ground terminal.
2) Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3) The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
Table 2. Operating conditions
Symbol
Parameter
Value
Unit
V
+
Supply Voltage
Common Mode Input Voltage Range
3 to 16
V
CC
+
V
V
0 to V
- 1.5
icm
CC
3/17
TS271
Absolute Maximum Ratings
Figure 2. Schematic Diagram
4/17
Absolute Maximum Ratings
TS271
Figure 3. Offset voltage null circuit
Figure 5. Resistor biasing
-
+
V
+
V
CC
CC
5
1
+
8
-
-
V
O
V
O
-
V
25kΩ
CC
+
+
Rset
Rset
Rset
-
-
V
V
CC
CC
-
CONNECTED TO VCC (Rset VALUE : SEE Fig. 1)
Rset CONNECTED TO GROUND
Rset
OFFSET COMPENSATION GUARANTEED FOR
TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA)
Figure 4. Offset voltage null circuit
Figure 6. Rset connected to Vcc-
VCC = +3V
VCC = +5V
VCC = +16V
VCC = +10V
-
Rset
10MΩ
1MΩ
5
1
+
8
-
V
25kΩ
CC
Rset
100kΩ
10kΩ
OFFSET COMPENSATION GUARANTEED FOR
TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA)
0.1µA
1µA
10µA
100µA
Iset
5/17
TS271
Electrical Characteristics
3 Electrical Characteristics
-
Table 3. for I
= 1.5µA - VCC+ = +10V, VCC = 0V, Tamb = +25°C (unless otherwise specified)
SET
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
Symbol
Parameter
Unit
Min. Typ. Max. Min. Typ. Max.
Input Offset Voltage
V
= 1.4V, V = 0V
TS271C/I/M
1.1
0.9
0.25
10
5
2
12
6.5
3
10
5
2
12
6.5
3.5
O
ic
1.1
0.9
0.25
TS271AC/AI/AM
TS271BC/BI/BM
TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
V
mV
io
T
≤ T
≤ T
max
min
amb
DV
I
Input Offset Voltage Drift
Input Offset Current note
2
1
2
1
µV/°C
pA
io
1
V
= 5V, V = 5V
io
ic
O
100
150
200
300
T
≤ T
≤ T
max
min
amb
Input Bias Current - see note 1
I
V
T
= 5V, V = 5V
≤ T
1
9
1
9
pA
ib
ic
O
≤ T
max
min
amb
High Level Output Voltage
V
T
= 100mV, R = 1MΩ
≤ T
V
V
8.8
8.7
8.8
8.6
V
id
L
OH
≤ T
max
min
amb
Low Level Output Voltage
= -100mV
mV
OL
V
50
50
id
Large Signal Voltage Gain
= 5V, R = 1MΩ, V = 1V to 6V
V
A
30
20
100
30
20
100
V/mV
iC
L
o
vd
T
≤ T
≤ T
amb max
min
Gain Bandwidth Product
GBP
CMR
SVR
MHz
dB
A = 40dB, R = 1MΩ, C = 100pF, f = 100kHz
0.1
80
80
0.1
80
80
v
L
L
in
Common Mode Rejection Ratio
= 1V to 7.4V, V = 1.4V
V
60
60
60
60
iC
o
Supply Voltage Rejection Ratio
dB
+
V
= 5V to 10V, V = 1.4V
o
CC
Supply Current (per amplifier)
A = 1, no load, V = 5V
I
10
15
17
10
15
18
µA
v
o
CC
T
≤ T
≤ T
amb max
min
Output Short Circuit Current
V = 0V, V = 100mV
I
mA
mA
o
60
45
60
45
o
id
Output Sink Current
I
sink
V = V , V = -100mV
o
CC
id
Slew Rate at Unity Gain
SR
V/µs
R = 1MΩ, C = 100pF, V = 3 to 7V
0.04
0.04
L
L
i
Phase Margin at Unity Gain
A = 40dB, R = 1MΩ
C = 10pF
φm
35
10
35
10
Degrees
%
v
L
L
C = 100pF
L
Overshoot Factor
A = 40dB, R = 1MΩ
C = 10pF
K
40
70
40
70
v
L
L
OV
C = 100pF
L
Equivalent Input Noise Voltage
nV
-----------
e
n
f = 1kHz, R = 100Ω
s
30
30
Hz
1) Maximum values including unavoidable inaccuracies of the industrial test.
6/17
Electrical Characteristics
TS271
Figure 10. High level output voltage versus
high level output current
Typicalcharacteristicsfor ISET = 1.5µA
Figure 7. Supply current versus supply
voltage
20
16
12
8
°
Tamb = 25 C
20
Vid = 100mV
°
Tamb = 25 C
VCC = 16V
AV = 1
15
10
5
VO = VCC / 2
VCC = 10V
4
0
-50
-40
-30
-20
-10
0
OUTPUT CURRENT, IOH (mA)
0
4
8
12
16
SUPPLY VOLTAGE, V (V)
CC
Figure 11. Low level output voltage versus low
level output current
Figure 8. Input bias current versus free air
temperature
1.0
100
VC C
= 3V
VCC = 10V
0.8
Vi = 5V
0.6
0.4
0.2
V
= 5V
C C
10
T
V
V
= 25°C
= -100m V
2
amb
= 0.5V
ic
id
0
1
3
1
O UTPUT CURRENT, I
(m A)
25
50
75
100
125
OL
TEMPERATURE, Tamb ( °C)
Figure 12. Low level output voltage versus low
level output current
Figure 9. High level output voltage versus
high level output current
3
5
V C C = 10V
°
Tamb = 25 C
4
3
2
1
Vid = 100mV
VC C = 16V
2
VCC= 5V
1
T
V
V
= 25°C
= 0.5V
amb
VCC = 3V
i
id
= -100m V
0
-10
0
4
8
12
16
20
-8
-6
-4
-2
0
O UTPUT CURRENT, I
(m A)
OL
OUTPUT CURRENT, I OH (mA)
7/17
TS271
Electrical Characteristics
Figure 13. Open loop frequency response and
phase shift
Figure 16. Phase margin versus capacitive
load
40
50
T
a m b = 25°C
RL = 1M
AV = 1
Ω
40
30
G AIN
0
30
VC C = 10V
45
PHASE
90
20
10
Phase
Margin
20
10
0
Ta m b = 25°C
135
180
+
VC C = 10V
R L = 1M
C L = 100pF
Ω
Gain
Bandwidth
Product
A
= 100
V C L
-10
2
3
4
6
5
10
10
10
10
10
0
20
CAPACITANCE, C L
100
40
60
80
(pF)
FREQ UENCY, f (Hz)
Figure 14. Gain bandwidth product versus
supply voltage
Figure 17. Slew rate versus supply voltage
0.07
120
0.06
SR
T
a m b = 25°C
RL = 1M
CL = 100pF
Ω
0.05
100
80
A
V = 1
0.04
0.03
SR
T
a m b = 25°C
RL =
CL = 100pF
1M
Ω
0.02
0.01
60
4
6
8
10
12
14
16
40
SUPPLY VO LTAG E, VC C (V)
4
8
12
16
0
(V)
SUPPLY VO LTAG E, VC C
Figure 15. Phase margin versus supply
voltage
10
8
6
4
T
a m b = 25°C
RL = 1M
CL = 100pF
Ω
2
0
A
V = 1
12
SUPPLY VO LTAG E, V C C (V)
4
8
16
8/17
Electrical Characteristics
TS271
4 Electrical Characteristics
-
Table 4. for I
= 25µA - VCC+ = +10V, VCC = 0V, Tamb = +25°C (unless otherwise specified)
SET
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
Symbol
Parameter
Unit
Min. Typ. Max. Min. Typ. Max.
Input Offset Voltage
V
= 1.4V, V = 0V
TS271C/I/M
1.1
0.9
0.25
10
5
2
12
6.5
3
10
5
2
12
6.5
3.5
O
ic
1.1
0.9
0.25
TS271AC/AI/AM
TS271BC/BI/BM
TS271B/C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
V
mV
io
T
≤ T
≤ T
max
min
amb
DV
I
Input Offset Voltage Drift
Input Offset Current note
2
1
2
1
µV/°C
pA
io
1
V
= 5V, V = 5V
io
ic
O
100
150
200
300
T
≤ T
≤ T
max
min
amb
Input Bias Current - see note 1
I
V
T
= 5V, V = 5V
≤ T
1
1
pA
ib
ic
O
≤ T
max
min
amb
High Level Output Voltage
V
= 100mV, R = 100kΩ
V
V
8.7
8.6
8.9
8.7
8.5
8.9
V
id
L
OH
T
≤ T
≤ T
max
min
amb
Low Level Output Voltage
= -100mV
mV
OL
V
50
50
id
Large Signal Voltage Gain
= 5V, R = 100kΩ, V = 1V to 6V
V
A
30
20
50
30
10
50
V/mV
iC
L
o
vd
T
≤ T
≤ T
min
amb max
Gain Bandwidth Product
GBP
CMR
SVR
MHz
dB
A = 40dB, R = 100kΩ, C = 100pF, f = 100kHz
0.7
80
80
0.7
80
80
v
L
L
in
Common Mode Rejection Ratio
= 1V to 7.4V, V = 1.4V
V
60
60
60
60
iC
o
Supply Voltage Rejection Ratio
dB
+
V
= 5V to 10V, V = 1.4V
o
CC
Supply Current (per amplifier)
A = 1, no load, V = 5V
I
150
200
250
150
200
300
µA
v
o
CC
T
≤ T
≤ T
amb max
min
Output Short Circuit Current
V = 0V, V = 100mV
I
mA
mA
o
60
45
60
45
o
id
Output Sink Current
I
sink
V = V , V = -100mV
o
CC
id
Slew Rate at Unity Gain
SR
V/µs
R = 100kΩ, C = 100pF, V = 3 to 7V
0.6
0.6
L
L
i
Phase Margin at Unity Gain
A = 40dB, R = 100kΩ
C = 10pF
φm
50
30
50
30
Degrees
%
v
L
L
C = 100pF
L
Overshoot Factor
A = 40dB, R = 100kΩ
C = 10pF
K
30
50
30
50
v
L
L
OV
C = 100pF
L
Equivalent Input Noise Voltage
nV
-----------
e
n
f = 1kHz, R = 100Ω
s
38
38
Hz
1)
Maximum values including unavoidable inaccuracies of the industrial test.
9/17
TS271
Electrical Characteristics
Figure 21. High level output voltage versus
high level output current
Typical characteristics for ISET = 25µA
Figure 18. Supply current versus supply
voltage
20
°
Tamb = 25 C
200
Vid = 100mV
16
12
8
VCC = 16V
150
VCC = 10V
100
4
°
Tamb = 25 C
50
0
AV = 1
VO = VCC / 2
0
-50
-40
-30
-20
-10
0
OUTPUT CURRENT, IOH (mA)
4
8
12
16
SUPPLY VOLTAGE, V (V)
CC
Figure 22. Low level output voltage versus low
level output current
Figure 19. Input bias current versus free air
temperature
1.0
100
VC C
= 3V
VCC = 10V
Vi = 5V
0.8
0.6
0.4
0.2
V
= 5V
C C
10
T
V
V
= 25°C
= -100m V
2
amb
= 0.5V
ic
id
0
1
3
1
O UTPUT CURRENT, I
(m A)
OL
25
50
75
100
125
TEMPERATURE, Tamb ( °C)
Figure 23. Low level output voltage versus low
level output current
Figure 20. High level output voltage versus
high level output current
3
5
V C C = 10V
°
Tamb = 25 C
4
3
2
1
Vid = 100mV
VC C = 16V
2
VCC= 5V
1
T
V
V
= 25°C
= 0.5V
amb
VCC = 3V
i
id
= -100m V
0
-10
0
4
8
12
16
20
-8
-6
-4
-2
0
O UTPUT CURRENT, I
(m A)
OL
OUTPUT CURRENT, I OH (mA)
10/17
Electrical Characteristics
TS271
Figure 24. Open loop frequency response and
phase shift
Figure 27. Phase margin versus capacitive
load
50
40
50
T
a m b = 25°C
RL = 100k
V = 1
VC C = 10V
Ω
40
0
G AIN
A
30
45
PHASE
Phase
90
30
20
Margin
20
10
0
Ta m b = 25°C
+
VC C = 10V
135
180
R L = 100k
C L = 100pF
Ω
Gain
Bandwidth
Product
A
= 100
V C L
-10
2
3
7
4
6
5
0
20
CAPACITANCE, C L
100
10
10
40
60
80
(pF)
10
10
10
10
FREQ UENCY, f (Hz)
Figure 25. Gain bandwidth product versus
supply voltage
Figure 28. Slew rate versus supply voltage
1.0
0.9
SR
0.8
T
a m b = 25°C
RL = 100k
CL = 100pF
0.8
0.7
Ω
SR
0.6
A
V = 1
0.4
T
a m b = 25°C
0.6
Ω
RL = 100k
CL = 100pF
0.2
0
0.5
0.4
4
6
8
10
12
14
16
SUPPLY VO LTAG E, VC C (V)
4
8
12
16
0
(V)
SUPPLY VO LTAG E, VC C
Figure 26. Phase margin versus supply
voltage
50
40
30
20
T
a m b = 25°C
RL = 100k
CL = 100pF
Ω
10
0
A
V = 1
12
SUPPLY VO LTAG E, V C C (V)
4
8
16
11/17
TS271
Electrical Characteristics
5 Electrical Characteristics
-
Table 5. for I
= 130µA - VCC+ = +10V, VCC = 0V, Tamb = +25°C (unless otherwise specified)
SET
TS271I/AI/BI
TS271C/AC/BC
TS271M/AM/BM
Symbol
Parameter
Unit
Min. Typ. Max. Min. Typ. Max.
Input Offset Voltage
V
= 1.4V, V = 0V
TS271C/I/M
1.1
0.9
0.25
10
5
2
12
6.5
3
10
5
2
12
6.5
3.5
O
ic
1.1
0.9
0.25
TS271AC/AI/AM
TS271BC/BI/BM
TS271B/C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
V
mV
io
T
≤ T
≤ T
min
amb
max
DV
I
Input Offset Voltage Drift
Input Offset Current note
2
1
2
1
µV/°C
pA
io
1
V
= 5V, V = 5V
io
ic
O
100
150
200
300
T
≤ T
≤ T
max
min
amb
Input Bias Current - see note 1
I
V
T
= 5V, V = 5V
≤ T
1
1
pA
ib
ic
O
≤ T
max
min
amb
High Level Output Voltage
V
= 100mV, R = 10kΩ
V
V
8.2
8.1
8.4
8.2
8
8.4
V
id
L
OH
T
≤ T
≤ T
max
min
amb
Low Level Output Voltage
= -100mV
mV
OL
V
50
50
id
Large Signal Voltage Gain
= 5V, R = 10kΩ, V = 1V to 6V
V
A
10
7
15
10
6
15
V/mV
iC
L
o
vd
T
≤ T
≤ T
amb max
min
Gain Bandwidth Product
GBP
CMR
SVR
MHz
dB
A = 40dB, R = 10kΩ, C = 100pF, f = 100kHz
2.3
80
70
2.3
80
70
v
L
L
in
Common Mode Rejection Ratio
= 1V to 7.4V, V = 1.4V
V
60
60
60
60
iC
o
Supply Voltage Rejection Ratio
dB
+
V
= 5V to 10V, V = 1.4V
o
CC
Supply Current (per amplifier)
A = 1, no load, V = 5V
I
800 1300
1400
800 1300
1500
µA
v
o
CC
T
≤ T
≤ T
amb max
min
Output Short Circuit Current
V = 0V, V = 100mV
I
mA
mA
o
60
45
60
45
o
id
Output Sink Current
I
sink
V = V , V = -100mV
o
CC
id
Slew Rate at Unity Gain
SR
V/µs
R = 10kΩ, C = 100pF, V = 3 to 7V
4.5
4.5
L
L
i
Phase Margin at Unity Gain
A = 40dB, R = 10kΩ
C = 10pF
φm
65
30
65
30
Degrees
%
v
L
L
C = 100pF
L
Overshoot Factor
A = 40dB, R = 10kΩ
C = 10pF
K
30
50
30
50
v
L
L
OV
C = 100pF
L
Equivalent Input Noise Voltage
nV
-----------
e
n
f = 1kHz, R = 100Ω
s
30
30
Hz
1) Maximum values including unavoidable inaccuracies of the industrial test.
12/17
Electrical Characteristics
TS271
Figure 32. High level output voltage versus
high level output current
TypicalcharacteristicsforISET =130µA
Figure 29. Supply current (each amplifier)
versus supply voltage
20
16
12
8
°
Tamb = 25 C
Vid = 100mV
1.0
0.8
0.6
0.4
VCC = 16V
VCC = 10V
4
°
Tamb = 25 C
AV = 1
VO = VCC / 2
0.2
0
0
-50
-40
-30
-20
-10
0
OUTPUT CURRENT, IOH (mA)
4
8
12
16
SUPPLY VOLTAGE, V (V)
CC
Figure 33. Low level output voltage versus low
level output current
Figure 30. Input bias current versus free air
temperature
1.0
100
VC C
= 3V
0.8
VCC = 10V
Vi = 5V
0.6
0.4
0.2
V
= 5V
C C
10
T
V
V
= 25°C
= -100m V
2
amb
= 0.5V
ic
id
0
1
3
O UTPUT CURRENT, I
(m A)
OL
1
25
50
75
100
125
TEMPERATURE, Tamb ( °C)
Figure 34. Low level output voltage versus low
level output current
Figure 31. High level output voltage versus
high level output current
3
5
V C C = 10V
°
Tamb = 25 C
4
3
2
1
Vid = 100mV
VC C = 16V
2
VCC= 5V
1
T
V
V
= 25°C
= 0.5V
amb
i
id
= -100m V
VCC = 3V
0
4
8
12
16
20
0
-10
-8
-6
-4
-2
0
O UTPUT CURRENT, I
(m A)
OL
OUTPUT CURRENT, I OH (mA)
13/17
TS271
Electrical Characteristics
Figure 35. Open loop frequency response and
phase shift
Figure 38. Phase margin versus capacitive
load
70
50
T
a m b = 25°C
Ω
RL = 10k
AV = 1
40
0
G AIN
60
30
45
VC C = 10V
PHASE
Phase
Margin
90
20
10
0
50
40
Ta m b = 25°C
VC C = 10V
+
135
180
R L = 10k
C L = 100pF
Ω
Gain
Bandwidth
Product
A
= 100
V C L
-10
2
3
7
4
6
5
30
10
10
10
10
10
10
0
20
CAPACITANCE, C L
100
40
60
80
(pF)
FREQ UENCY, f (Hz)
Figure 39. Slew rate versus supply voltage
Figure 36. Gain bandwidth product versus
supply voltage
5
5
SR
4
T
a m b = 25°C
4
3
Ω
RL = 10k
SR
3
CL = 100pF
A
V = 1
2
T
a m b = 25°C
2
1
0
RL = 10k
CL = 100pF
Ω
1
4
6
8
10
12
14
16
SUPPLY VO LTAG E, VC C (V)
4
8
12
16
0
(V)
SUPPLY VO LTAG E, VC C
Figure 37. Phase margin versus supply
voltage
50
40
30
20
T
a m b = 25°C
RL = 10k
CL = 100pF
Ω
10
0
A
V = 1
12
SUPPLY VO LTAG E, V C C (V)
4
8
16
14/17
Package Mechanical Data
TS271
6 Package Mechanical Data
Plastic DIP-8 MECHANICAL DATA
mm.
TYP
3.3
inch
TYP.
0.130
DIM.
MIN.
MAX.
MIN.
MAX.
A
a1
B
0.7
1.39
0.91
0.028
0.055
0.036
1.65
1.04
0.065
0.041
B1
b
0.5
0.020
b1
D
E
0.38
0.5
9.8
0.015
0.020
0.386
8.8
0.346
0.100
0.300
0.300
e
2.54
7.62
7.62
e3
e4
F
7.1
4.8
0.280
0.189
I
L
3.3
0.130
Z
0.44
1.6
0.017
0.063
P001F
15/17
TS271
Package Mechanical Data
Package Mechanical Data
SO-8 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
A1
A2
B
1.35
0.10
1.10
0.33
0.19
4.80
3.80
1.75
0.053
0.069
0.25
1.65
0.51
0.25
5.00
4.00
0.04
0.010
0.065
0.020
0.010
0.197
0.157
0.043
0.013
0.007
0.189
0.150
C
D
E
e
1.27
0.050
H
5.80
0.25
0.40
6.20
0.50
1.27
0.228
0.010
0.016
0.244
0.020
0.050
h
L
k
˚ (max.)
8
ddd
0.1
0.04
0016023/C
16/17
Revision History
TS271
7 Revision History
Date
Revision
Description of Changes
01 Nov. 2001
1
2
First Release
•
•
Application block diagram updated on Figure 2 on page 4
Schematic Diagram updated on Figure 4 on page 5
01 March 2005
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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17/17
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