TS271AM [STMICROELECTRONICS]
PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS; 可编程CMOS单路运算放大器
| 型号： | TS271AM |
| 厂家： | 
ST |
| 描述： | PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS |
| 文件： | 总15页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS271C,I,M
PROGRAMMABLE CMOS
SINGLE OPERATIONAL AMPLIFIERS
.
.
.
OFFSET NULL CAPABILITY (by external
compensation)
DYNAMIC CHARACTERISTICS
ADJUSTABLE BY ISET
CONSUMPTION CURRENT AND DYNAMIC
PARAMETERS ARE STABLE REGARDING
THE VOLTAGE POWER SUPPLY
VARIATIONS
.
OUTPUT VOLTAGE CAN SWING TO
GROUND
VERYLARGE ISET RANGE
STABLE AND LOW OFFSET VOLTAGE
THREE INPUT OFFSET VOLTAGE
SELECTIONS
N
DIP8
(Plastic Package)
D
SO8
.
.
.
(Plastic Micropackage)
DESCRIPTION
ORDER CODES
The TS271 is a low cost, low power single opera-
tional amplifier designed to operate with single or
Package
Temperature
Range
Part Number
N
●
●
●
D
●
●
●
TS271C/AC/BC
TS271I/AI/BI
0oC, +70oC
-40oC, +125oC
-55oC, +125oC
TS271M/AM/BM
Example : TS271ACN
dual supplies. This operational amplifier uses the
SGS-THOMSON silicon gate CMOS process giv-
ing it an excellent consumption-speed ratio. This
amplifier is ideally suited for low consumption
applications.
PIN CONNECTIONS (top view)
1
8
7
6
5
The power supply is externally programmable with
a resistorconnectedbetweenpins 8and4. It allows
to choose the best consumption-speed ratio and
supply current can be minimized according to the
required speed. This device is specified for the
followingISET currentvalues : 1.5µA, 25µA, 130µA.
2
3
4
-
+
1 - Offset Null 1
2 - Inverting Input
3 - Non-inverting Input
This CMOS amplifier offers very high input imped-
ance and extremely low input currents. The major
advantage versus JFET devices is the very low
input currents drift with temperature (see figure 3).
-
4 - V
5 - OfCfsCet Null 2
6 - Output
7 - V
8 - I
+
CC
SET
October 1997
1/15
TS271C,I,M
BLOCK DIAGRAM
VCC
Output
stage
Output
Second
stage
Input
differential
VCC
Offset null
E
E
Iset Input
Input
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
+
VCC
Supply Voltage - (note 1)
18
±18
Vid
Vi
Differential Input Voltage - (note 2)
Input Voltage - (note 3)
Output Current for VCC+ ≥ 15V
Input Current
V
-0.3 to 18
±30
V
IO
mA
mA
oC
Iin
±5
Toper
Operating Free-Air Temperature Range
TS271C/AC/BC
0 to +70
-40 to +125
-55 to +125
TS271I/AI/BI
TS271M/AM/BM
Tstg
Storage Temperature Range
-65 to +150
oC
Notes : 1. All voltage values, except differential voltage, are with respect to network ground terminal.
2. Differential voltages are thenon-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
+
VCC
Supply Voltage
Common Mode Input Voltage Range
3 to 16
+
Vicm
0 to VCC - 1.5
V
2/15
TS271C,I,M
SCHEMATIC DIAGRAM
3/15
TS271C,I,M
OFFSET VOLTAGE NULL CIRCUIT
RESISTOR BIASING
VCC
VCC
5
1
8
VO
VO
VCC
Ω
25k
Rset
Rset
R set
VCC
VCC
RSET CONNECTED TO
VCC- (RSET VALUE : SEE
Fig.1)
RSET CONNECTED TO
GROUND
OFFSETCOMPENSATION GUARANTEED FOR
TS271BCX (ISET > 25µA),TS271ACX (ISET> 90µA)
-
Figure 1 :
RSET Connected to VCC
.
V
V
V
V
= +10V
= +16V
= +3V
= +5V
CC
CC
CC
CC
R
set
10M Ω
1M Ω
100k Ω
10k Ω
I
0. 1 A
µ
1µA
1 0µA
100µA
set
4/15
TS271C,I,M
ELECTRICAL CHARACTERISTICS FOR ISET = 1.5µA
VCC = +10V, VCC = 0V, Tamb = 25oC (unless otherwise specified)
+
-
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
Symbol
Parameter
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Vio
Input Offset Voltage
VO = 1.4V, Vic = 0V TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
mV
1.1
0.9
0.25
10
5
2
1.1
0.9
0.25
10
5
2
T
min. ≤ Tamb ≤ Tmax. TS271C/I/M
12
6.5
3
12
6.5
3.5
TS271AC/AI/AM
TS271BC/BI/BM
DVio
Iio
Input Offset Voltage Drift
0.7
1
0.7
1
µV/oC
Input Offset Current - (note 1)
Vic = 5V, Vo = 5V
pA
Tmin. ≤ Tamb ≤ Tmax
.
100
150
200
300
Iib
Input Bias Current - (note 1)
Vic = 5V, Vo = 5V
pA
V
1
9
1
9
Tmin. ≤ Tamb ≤ Tmax
.
VOH
High Level Output Voltage
Vid = 100mV, RL = 1MΩ
8.8
8.7
8.8
8.6
Tmin. ≤ Tamb ≤ Tmax
.
VOL
Avd
Low Level Output Voltage (Vid = -100mV)
50
50
mV
Large Signal Voltage Gain
V/mV
Vo = 1V to 6V, RL = 1MΩ, Vic = 5V
30
20
100
30
20
100
Tmin. ≤ Tamb ≤ Tmax
.
GBP
CMR
SVR
ICC
Gain Bandwidth Product (Av = 40dB,
MHz
dB
RL = 1MΩ, CL = 100pF, fin = 10kHz)
0.1
80
80
10
0.1
80
80
10
Common Mode Rejection Ratio
Vo = 1.4V, Vic = 1V to 7.4V
60
60
60
60
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V ,Vo = 1.4V
dB
Supply Current
µA
Av = 1, no load, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
15
17
15
18
Io
Isink
SR
m
Output Short Circuit Current
Vid = 100mV, Vo = 0V
mA
mA
60
45
60
45
Output Sink Current
Vid = -100mV, Vo = VCC
Slew-Rate at Unity Gain
V/µs
RL = 1MΩ, CL= 100pF, Vi = 3 to 7V
0.04
0.04
Phase Margin at Unity Gain
Av = 40dB, RL = 1MΩ
CL= 10pF
Degrees
35
10
35
10
CL= 100pF
Kov
en
Overshoot Factor
CL = 10pF
%
40
70
40
70
CL = 100pF
Equivalent Input Noise Voltage
nV
√Hz
f = 1kHz, RS = 100Ω
68
68
Note : 1. Maximum values including unavoidable inaccuracies of the industrial test.
5/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 1.5µA
Figure 2 :
Supply Current versus Supply
Voltage
Figure 3 : Input Bias Current versus Free Air
Temperature
100
20
15
VCC = 10V
Vic = 5V
Tamb = 25°C
AV = 1
VO = VCC / 2
10
5
10
1
25
50
75
100
125
0
4
8
12
16
SUPPLY VOLTAGE, VCC (V)
TEMPERATURE, T amb (°C)
Figure 4a : High Level Output Voltage versus
Figure 4b : High Level Output Voltage versus
High Level Output Current
High Level Output Current
5
20
Tamb = 25°C
V id = 100mV
16
Tamb = 25°C
Vid = 100mV
4
VCC = 16V
3
2
1
0
VCC = 5V
12
VCC = 10V
8
VCC = 3V
4
0
-10
-8
-6
-4
-2
0
-50
-40
-30
-20
-10
0
OUTPUT CURRENT, I OH (mA)
OUTPUT CURRENT, I OH (mA)
Figure 5a : Low Level Output Voltage versus
Figure 5b : Low Level Output Voltage versus
Low Level Output Current
Low Level Output Current
1.0
3
VCC = 10V
V CC = 3V
0.8
V CC = 5V
VCC = 16V
2
0.6
0.4
1
Tamb= 25°C
= 0.5V
Vid = -100mV
Tamb = 25°C
Vic = 0.5V
V
ic
0.2
V id = -100mV
0
4
8
12
16
20
0
1
2
3
OUTPUT CURRENT, I OL (mA)
OUTPUT CURRENT, I OL (mA)
6/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 1.5µA (continued)
Figure 6 :
Open Loop FrequencyResponse
and Phase Shift
Figure 7 : Gain Bandwidth Product versus
Supply voltage
120
100
80
50
40
30
20
Tamb = 25°C
R L = 1MΩ
CL = 100pF
AV = 1
0
GAIN
45
PHASE
Tamb = 25°C
90
Phase
Margin
VCC+ = 10V
135
180
10
0
Ω
RL = 1M
60
Gain
Bandwidth
Product
CL = 100pF
AVCL = 100
40
-10
102
103
104
105
106
0
4
8
12
16
FREQUENCY, f (Hz)
SUPPLY VOLTAGE, VCC (V)
Figure 8 :
Phase Margin versus Supply Voltage
Figure 9 : Phase Margin versus Capacitive
Load
10
8
40
Tamb = 25°C
RL= 1M Ω
AV = 1
30
VCC = 10V
6
20
Tamb = 25°C
RL = 1MΩ
CL = 100pF
AV = 1
4
10
2
0
4
8
12
16
0
20
40
60
80
100
SUPPLY VOLTAGE, VCC (V)
CAPACITANCE, C L (pF)
Figure 10 : Slew Rates versus Supply Voltage
0.07
Tamb = 25°C
SR
0.06
0.05
0.04
0.03
0.02
0.01
R L = 1MΩ
CL = 100pF
SR
4
6
8
10
12
14
16
SUPPLY VOLTAGE, VCC (V)
7/15
TS271C,I,M
ELECTRICAL CHARACTERISTICS FOR ISET = 25µA
VCC = +10V, VCC = 0V, Tamb = 25oC (unless otherwise specified)
+
-
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
Symbol
Parameter
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Vio
Input Offset Voltage
VO = 1.4V, Vic = 0V TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
mV
1.1
0.9
0.25
10
5
2
1.1
0.9
0.25
10
5
2
Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M
12
6.5
3
12
6.5
3.5
TS271AC/AI/AM
TS271BC/BI/BM
DVio
Iio
Input Offset Voltage Drift
2
1
2
1
µV/oC
Input Offset Current - (note 1)
Vic = 5V, Vo = 5V
pA
Tmin. ≤ Tamb ≤ Tmax.
100
150
200
300
Iib
Input Bias Current - (note 1)
Vic = 5V, Vo = 5V
pA
V
1
1
Tmin. ≤ Tamb ≤ Tmax.
VOH
High Level Output Voltage
Vid = 100mV, RL = 100kΩ
Tmin. ≤ Tamb ≤ Tmax.
8.7
8.6
8.9
8.7
8.5
8.9
VOL
Avd
Low Level Output Voltage (Vid = -100mV)
50
50
mV
Large Signal Voltage Gain
Vo = 1V to 6V, RL = 100kΩ, Vic = 5V
Tmin. ≤ Tamb ≤ Tmax.
V/mV
30
20
50
30
10
50
GBP
CMR
SVR
ICC
Gain Bandwidth Product (Av = 40dB,
MHz
dB
RL = 100kΩ, CL = 100pF, fin = 100kHz)
0.7
80
0.7
80
Common Mode Rejection Ratio
Vo = 1.4V, Vic = 1V to 7.4V
60
60
60
60
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V ,Vo = 1.4V
dB
80
80
Supply Current
µA
Av = 1, no load, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
150
200
250
150
200
300
Io
Isink
SR
m
Output Short Circuit Current
Vid = 100mV, Vo = 0V
mA
mA
60
45
60
45
Output Sink Current
Vid = -100mV, Vo = VCC
Slew-Rate at Unity Gain
V/µs
0.6
RL = 100kΩ, CL= 100pF, Vi = 3 to 7V
0.6
Phase Margin at Unity Gain
Av = 40dB, RL = 100kΩ
CL = 10pF
degrees
50
30
50
30
CL= 100pF
Kov
en
Overshoot Factor
CL = 10pF
%
30
50
30
50
CL = 100pF
Equivalent Input Noise Voltage
nV
√Hz
f = 1kHz, RS = 100Ω
38
38
Note : 1. Maximum values including unavoidable inaccuracies of the industrial test.
8/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 25µA
Figure 11 : Supply Current versus Supply
Figure 12 : Input Bias Current versus Free Air
Voltage
Temperature
100
200
150
VCC = 10V
Vic = 5V
10
1
100
Tamb = 25°C
AV = 1
VO = VCC / 2
50
0
4
8
12
16
25
50
75
100
125
SUPPLY VOLTAGE, VCC (V)
TEMPERATURE, T amb (°C)
Figure 13a : High Level Output Voltage versus
Figure 13b : High Level Output Voltage versus
High Level Output Current
High Level Output Current
5
20
Tamb = 25°C
V id = 100mV
16
Tamb = 25°C
Vid = 100mV
4
VCC = 16V
3
2
1
0
VCC = 5V
12
VCC = 10V
8
VCC = 3V
4
0
-10
-8
-6
-4
-2
0
-50
-40
-30
-20
-10
0
OUTPUT CURRENT, I OH (mA)
OUTPUT CURRENT, I OH (mA)
Figure 14a : Low Level Output Voltage versus
Figure 14b : Low Level Output Voltage versus
Low Level Output Current
Low Level Output Current
1.0
3
VCC = 10V
V CC = 3V
0.8
VCC = 16V
2
V CC = 5V
0.6
0.4
1
Tamb= 25°C
= 0.5V
Vid = -100mV
Tamb = 25°C
Vic = 0.5V
V
ic
0.2
V id = -100mV
0
4
8
12
16
20
0
1
2
3
OUTPUT CURRENT, I OL (mA)
OUTPUT CURRENT, I OL (mA)
9/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 25µA (continued)
Figure 15 : Open Loop FrequencyResponse
Figure 16 : Gain Bandwidth Product versus
and Phase Shift
Supply voltage
50
0.8
0.8
0.7
0.6
0.5
0.4
Tamb = 25°C
R L = 100kΩ
CL = 100pF
AV = 1
40
30
20
10
0
0
GAIN
PHASE
45
90
135
180
Phase
Margin
Tamb = 25°C
VCC+ = 10V
RL = 100k Ω
CL = 100pF
AVCL = 100
Gain
Bandwidth
Product
-10
103 104
0
4
8
12
16
102
105
106
107
SUPPLY VOLTAGE, VCC (V)
FREQUENCY, f (Hz)
Figure 17 : Phase Margin versus Supply Voltage
Figure 18 : Phase Margin versus Capacitive
Load
50
40
30
50
Tamb = 25°C
RL = 100k Ω
AV = 1
40
VCC = 10V
30
20
10
Tamb = 25°C
RL = 100k Ω
CL = 100pF
AV = 1
20
0
4
8
12
16
0
20
40
60
80
100
SUPPLY VOLTAGE, VCC (V)
CAPACITANCE, C L (pF)
Figure 19 : Slew Rates versus Supply Voltage
1.0
SR
0.8
0.6
SR
0.4
Tamb = 25°C
RL = 100kΩ
0.2
CL = 100pF
0
4
6
8
10 12
14
16
SUPPLY VOLTAGE, VCC (V)
10/15
TS271C,I,M
ELECTRICAL CHARACTERISTICS FOR ISET = 130µA
VCC = +10V, VCC = 0V, Tamb = 25oC (unless otherwise specified)
+
-
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
Symbol
Parameter
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Vio
Input Offset Voltage
VO = 1.4V, Vic = 0V TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
mV
1.1
0.9
0.25
10
5
2
1.1
0.9
0.25
10
5
2
Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M
12
6.5
3
12
6.5
3.5
TS271AC/AI/AM
TS271BC/BI/BM
DVio
Iio
Input Offset Voltage Drift
2
1
2
1
µV/oC
Input Offset Current - (note 1)
Vic = 5V, Vo = 5V
pA
Tmin. ≤ Tamb ≤ Tmax.
100
150
200
300
Iib
Input Bias Current - (note 1)
Vic = 5V, Vo = 5V
pA
V
1
1
Tmin. ≤ Tamb ≤ Tmax.
VOH
High Level Output Voltage
Vid = 100mV, RL = 10kΩ
Tmin. ≤ Tamb ≤ Tmax.
8.2
8.1
8.4
8.2
8
8.4
VOL
Avd
Low Level Output Voltage (Vid = -100mV)
50
50
mV
Large Signal Voltage Gain
Vo = 1V to 6V, RL = 10kΩ, Vic = 5V
Tmin. ≤ Tamb ≤ Tmax.
V/mV
10
7
15
10
6
15
GBP
CMR
SVR
ICC
Gain Bandwidth Product (Av = 40dB,
MHz
dB
RL = 10kΩ, CL = 100pF, fin = 100kHz)
2.3
80
2.3
80
Common Mode Rejection Ratio
Vo = 1.4V, Vic = 1V to 7.4V
60
60
60
60
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V ,Vo = 1.4V
dB
70
70
Supply Current
µA
Av = 1, no load, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
800
1300
1400
800
1300
1500
Io
Isink
SR
m
Output Short Circuit Current
Vid = 100mV, Vo = 0V
mA
mA
60
45
60
45
Output Sink Current
Vid = -100mV, Vo = VCC
Slew-Rate at Unity Gain
V/µs
RL = 10kΩ, CL= 100pF, Vi = 3 to 7V
4.5
4.5
Phase Margin at Unity Gain
Av = 40dB, RL = 10kΩ
CL= 10pF
degrees
65
50
65
50
CL= 100pF
Kov
en
Overshoot Factor
CL = 10pF
%
30
30
30
30
CL = 100pF
Equivalent Input Noise Voltage
nV
√Hz
f = 1kHz, RS = 100Ω
30
30
Note : 1. Maximum values including unavoidable inaccuracies of the industrial test.
11/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 130µA
Figure 20 : Supply Current (each amplifier) ver-
Figure 21 : Input Bias Current versus Free Air
sus Supply Voltage
Temperature
100
1.0
0.8
0.6
VCC = 10V
Vic = 5V
10
1
0.4
T amb = 25°C
AV = 1
VO = VCC / 2
0.2
25
50
75
100
125
0
4
8
12
16
SUPPLY VOLTAGE, VCC (V)
TEMPERATURE, T amb (°C)
Figure 22a : High Level Output Voltage versus
Figure 22b : High Level Output Voltage versus
High Level Output Current
High Level Output Current
5
20
Tamb = 25°C
V id = 100mV
16
Tamb = 25°C
Vid = 100mV
4
VCC = 16V
3
2
1
0
VCC = 5V
12
VCC = 10V
8
VCC = 3V
4
0
-10
-8
-6
-4
-2
0
-50
-40
-30
-20
-10
0
OUTPUT CURRENT, I OH (mA)
OUTPUT CURRENT, I OH (mA)
Figure 23a : Low Level Output Voltage versus
Figure 23b : Low Level Output Voltage versus
Low Level Output Current
Low Level Output Current
1.0
3
VCC = 10V
V CC = 3V
0.8
VCC = 16V
2
V CC = 5V
0.6
0.4
1
Tamb= 25°C
= 0.5V
Vid = -100mV
Tamb = 25°C
Vic = 0.5V
V
ic
0.2
V id = -100mV
0
4
8
12
16
20
0
1
2
3
OUTPUT CURRENT, I OL (mA)
OUTPUT CURRENT, I OL (mA)
12/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 130µA (continued)
Figure 24 : Open Loop FrequencyResponse and Figure 25 : Gain Bandwidth Product versus
Phase Shift
Supply voltage
50
40
30
20
10
0
5
4
3
2
1
Tamb = 25°C
R L = 10kΩ
CL = 100pF
AV = 1
0
GAIN
45
90
135
180
PHASE
Phase
Margin
Tamb = 25°C
VCC+ = 10V
RL = 10kΩ
CL = 100pF
AVCL = 100
Gain
Bandwidth
Product
-10
102
103 104
105
106
107
0
4
8
12
16
SUPPLY VOLTAGE, VCC (V)
FREQUENCY, f (Hz)
Figure 26 : Phase Margin versus Supply Voltage
Figure 27 : Phase Margin versus Capacitive Load
50
70
Tamb = 25°C
RL= 10kΩ
AV = 1
40
30
60
VCC = 10V
50
20
10
Tamb = 25°C
Ω
RL = 10k
40
30
CL = 100pF
AV = 1
0
4
8
12
16
20
40
0
60
80
100
SUPPLY VOLTAGE, VCC (V)
CAPACITANCE, C L (pF)
Figure 28 : Slew Rates versus Supply Voltage
5
SR
4
3
SR
2
Tamb = 25°C
RL = 10kΩ
1
CL = 100pF
0
4
6
8
10 12
14
16
SUPPLY VOLTAGE, VCC (V)
13/15
TS271C,I,M
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
Millimeters
Inches
Typ.
Dimensions
Min.
Typ.
Max.
Min.
Max.
A
a1
B
3.32
0.131
0.51
1.15
0.020
0.045
0.014
0.008
1.65
0.55
0.065
0.022
0.012
0.430
0.384
b
0.356
0.204
b1
D
E
0.304
10.92
9.75
7.95
0.313
e
2.54
7.62
7.62
0.100
0.300
0.300
e3
e4
F
6.6
0260
0.200
0.150
0.060
i
5.08
3.81
1.52
L
3.18
0.125
Z
14/15
TS271C,I,M
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
Millimeters
Dimensions
Inches
Typ.
Min.
Typ.
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
A
a1
a2
a3
b
0.1
0.004
0.65
0.35
0.19
0.25
0.026
0.014
0.007
0.010
b1
C
c1
D
45o (typ.)
4.8
5.8
5.0
6.2
0.189
0.228
0.197
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
L
M
S
8o (max.)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of suchinformation nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.
Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics – Printed in Italy – AllRights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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