TN805-700B [STMICROELECTRONICS]

SCR’s; SCR的


型号：	TN805-700B
厂家：	ST
描述：	SCR’s SCR的栅极触发装置可控硅整流器
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中文：	中文翻译
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TN805/TN815-B

SCR’s

FEATURES

I_TRMS= 8 A

V_DRM= 400 V to 800 V

≤

I_GT5 mA and 15 mA

DESCRIPTION

The TN805/TN815-B serie of Silicon Controlled

Rectifiers uses a high performance TOPGLASS

PNPN technology.

These parts are intended for general purpose

applications using mount technology.

DPAK

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

RMS on-state current

(180 conduction angle)

I_T(RMS)

Tc= 105 C

I_T(AV)

I_TSM

Mean on-state current

Tc= 105°C

(180 conduction angle)

Non repetitive surge peak on-state current

(Tj initial = 25°C)

tp = 8.3 ms

tp = 10 ms

tp = 10ms

I²t

I²t Value for fusing

24.5

100

A²s

A/ s

dI/dt

Critical rate of rise of on-state current

dI_G/dt = 1 A/ s.

I_G= 100 mA

Storage junction temperature range

Operating junction temperature range

T_stg

T_j

- 40 to + 150

- 40 to + 125

Maximum lead temperature for soldering during 10s

260

TN805 or TN815

Symbol

Parameter

Unit

400B

600B

700B

700

800B

V_DRM

V_RRM

Repetitive peak-off voltage

Tj = 125°C

400

600

800

August 1998 - Ed: 1A

1/5

TN805/TN815-B

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Junction to ambient (S=0.5cm²)

C/W

Rth(j-a)

Rth(j-c)

Junction to case for D.C

2.5

GATE CHARACTERISTICS

P_{G (AV)}= 1W P_GM= 10 W (tp = 20 s)

I_GM= 4 A (tp = 20 s)

V_RGM= 5 V

ELECTRICAL CHARACTERISTICS

Value

Symbol

Test Conditions

Type

Unit

TN805

TN815

Ω

I_GT

V_GT

V_GD

tgt

V_D= 12V (DC) R_L= 33

Tj= 25 C

MAX

V_D= 12V (DC) R_L= 33

Tj= 25°C

1.5

0.2

Ω

V_D= V_DRMR_L= 3.3k

Tj= 125 C MIN

V_D= V_DRM

I_G= 40mA

I_TM= 3 x I_T(AV)

dIG/dt = 0.5A/us

Tj= 25°C

TYP

I_H

I_T= 150mA Gate open

I_G= 1.2 I_GT

Tj= 25°C

MAX

Tj= 25 C

I_L

I_TM= 16A tp= 380 s

V_TM

I_DRM

I_RRM

dV/dt

Tj= 25 C

1.6

VDRM Rated

VRRM Rated

Tj= 25 C

Tj = 125°C MAX

V/ s

Linear slope up to

V_D=67%V_DRMGate open

Tj= 125 C MIN

150

ORDERING INFORMATION

TN 8 05 - 600 B

PACKAGES :

B: DPAK

SCR

CURRENT

V_DRM/ V_RRM

SENSITIVITY

2/5

TN805/815-B

Fig. 1:

Fig. 2 :

Correlation between maximum average

Maximum average power dissipation ver-

sus average on-state current .

power dissipation and maximum allowable em-

peratures (T_amband T_case) for different thermal

resistances heatsink+contact.

P(W)

Tcase (°C)

α = 180°

α = 120°

α = 90°

105

110

115

120

D.C.

α = 180°

Rth=0°C/W

α = 60°

α = 30°

Rth=37°C/W

360°

Tamb(°C)

10 20 30 40 50 60 70 80 90 100 110 120 130

IT(av)(A)

125

Fig. 3-1:

Fig. 3-2:

Average and D.C. on-state current versus

case temperature.

Average and D.C. on-state current versus

case temperature.

IT(av)(A)

2.0

D.C.

1.8

D.C.

1.6

1.4

1.2

α = 180°

1.0

0.8

0.6

0.4

0.2

0.0

Tamb(°C)

10 20 30 40 50 60 70 80 90 100 110 120 130

Tcase(°C)

10 20 30 40 50 60 70 80 90 100 110 120 130

Fig. 4-1:

versus pulse duration.

Fig. 4-2:

Relative variation of thermal impedance

versus pulse duration.

Relative variation of thermal impedance

K=[Zth(j-c)/Rth(j-c)]

K=[Zth(j-a)/Rth(j-a)]

1.0

1.00

0.5

0.10

0.01

0.2

0.1

tp(s)

1E+0

1E-3

1E-2

1E-1

1E+0

1E-2

1E-1

1E+1

1E+2 5E+2

3/5

TN805/TN815-B

Fig. 5:

Fig. 6:

Non repetitive surge peak on-state current

versus number of cycles.

Relative variation of gate trigger current and

holding current versus junction temperature.

Igt,IH[Tj]/Ig,IH[Tj=25°C]

ITSM(A)

2.0

Tj initial=25°C

F=50Hz

1.8

1.6

1.4

Igt

1.2

1.0

0.8

0.6

0.4

0.2

Number of cycles

10 100

Tj(°C)

0.0

-40

-20

100 120

1000

Fig. 8:

Fig. 7:

On-state characteristics (maximum values).

Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and cor-

responding value of I2t.

ITM(A)

ITSM(A),I²t(A²s)

100.0

10.0

1.0

300

Tj initial=25°C

ITSM

Tj max.:

Vto=0.85V

Rt=46m

100

Tj=Tj max.

Tj=25°C

I²t

tp(ms)

VTM(V)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig. 9:

Thermal resistance junction to ambient ver-

sus copper surface under tab (Epoxy printed circuit

board FR4, copper thickness: 35 m).

Rth(j-a) (°C/W)

100

S(Cu) (cm²)

10 12

16 18

4/5

TN805/815-B

PACKAGE MECHANICAL DATA

DPAK

DIMENSIONS

Millimeters Inches

Min. Typ. Max Min. Typ. Max.

REF.

2.20

2.40 0.086

1.10 0.035

0.23 0.001

0.90 0.025

5.40 0.204

0.60 0.017

0.60 0.018

6.20 0.236

6.60 0.251

4.60 0.173

10.10 0.368

0.094

0.043

0.009

0.035

0.212

0.023

0.244

0.259

0.181

0.397

A1 0.90

A2 0.03

0.64

B2 5.20

0.45

C2 0.48

6.00

6.40

4.40

9.35

0.80

0.031

L4 0.60

1.00 0.023

0.039

8°

0°

8°

0°

WEIGHT :

MARKING

0.30g

FOOT PRINT DIMENSIONS

(in millimeters)

6.7

TYPE

MARKING

6.7

TN8

05x0

T805- x00B

6.7

TN8

15x0

T815-x00B

1.6

2.3 2.3

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5/5

TN805-700B [STMICROELECTRONICS]

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