TDE1898RDP [STMICROELECTRONICS]
0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH; 0.5A高端驱动器工业智能电源开关型号: | TDE1898RDP |
厂家: | ST |
描述: | 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH |
文件: | 总12页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TDE1897R
TDE1898R
0.5A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
PRELIMINARY DATA
0.5A OUTPUT CURRENT
MULTIPOWER BCD TECHNOLOGY
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO VS - 45V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUTWITH HYSTERESIS
OPEN LOAD DETECTION
Minidip
SIP9
SO20
ORDERING NUMBERS:
TDE1898RSP
TDE1897RDP
TDE1898RDP
TDE1897RFP
TDE1898RFP
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
ogy, for driving inductive or resistive loads. An in-
ternal Clamping Diode enables the fast demag-
netization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher-
ently indistructible and suitable for general pur-
pose industrial applications.
DESCRIPTION
The TDE1897R/TDE1898R is a monolithic Intelli-
gent Power Switch in Multipower BCD Technol-
BLOCK DIAGRAM
October 1995
1/12
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
TDE1897R - TDE1898R
PIN CONNECTIONS (Top view)
Minidip
SO20
SIP9
ABSOLUTE MAXIMUM RATINGS (Minidip pin reference)
Symbol
Parameter
Supply Voltage (Pins 3 - 1) (TW < 10ms)
Supply to Output Differential Voltage. See also VCl 3-2 (Pins 3 - 2)
Input Voltage (Pins 7/8)
Value
Unit
V
VS
VS – VO
Vi
50
internally limited
-10 to VS +10
43
V
V
Vi
Differential Input Voltage (Pins 7 - 8)
V
Ii
Input Current (Pins 7/8)
20
mA
A
IO
Output Current (Pins 2 - 1). See also ISC
Energy from Inductive Load (TJ = 85°C)
Power Dissipation. See also THERMAL CHARACTERISTICS.
internally limited
200
El
mJ
W
°C
°C
Ptot
Top
Tstg
internally limited
-25 to +85
-55 to 150
Operating Temperature Range (Tamb
)
Storage Temperature
THERMAL DATA
Symbol
Description
Minidip
Sip
10
SO20
90
Unit
°C/W
°C/W
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
100
70
2/12
TDE1897R - TDE1898R
ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = –25 to +85°C,unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Vsmin
3
Supply Voltage for Valid
Diagnostics
Idiag > 0.5mA @ Vdg1 = 1.5V
9
35
V
Vs 3
Iq 3
Supply Voltage (operative)
Quiescent Current
18
24
35
V
Vil
Vih
2.5
4.5
4
7.5
mA
mA
I
out = Ios = 0
Vsth1
Undervoltage Threshold 1
Undervoltage Threshold 2
Supply Voltage Hysteresis
Short Circuit Current
(See fig. 1); Tamb = 0 to +85°C
(See fig. 1); Tamb = 0 to +85°C
(See fig. 1); Tamb = 0 to +85°C
VS = 18 to 35V; RL = 1Ω
11
V
V
V
A
Vsth2
Vshys
Isc
3
15.5
3
0.4
1
0.75
1.5
Vdon 3-2
Output Voltage Drop
@ Iout = 625mA; Tj = 25°C
@ Iout = 625mA; Tj = 125°C
250
400
425
600
mV
mV
Ioslk
Vol
2
Output Leakage Current
Low State Out Voltage
@ Vi = Vil , Vo = 0V
300
1.5
55
µA
V
2
@ Vi = Vil; RL = ∞
0.8
1.4
Vcl 3-2
Iold
Internal Voltage Clamp (VS - VO) @ IO = -500mA
45
0.5
–7
V
2
Open Load Detection Current
Vi = Vih; Tamb = 0 to +85°C
9.5
15
mA
V
Vid 7-8
Common Mode Input Voltage
Range (Operative)
VS = 18 to 35V,
VS - Vid 7-8 < 37V
Iib 7-8
Vith 7-8
Viths 7-8
Input Bias Current
Vi = –7 to 15V; –In = 0V
V+In > V–In
–700
0.8
700
2
µA
V
Input Threshold Voltage
Input Threshold Hysteresis
Voltage
V+In > V–In
50
400
mV
Rid 7-8
Diff. Input Resistance
@ 0 < +In < +16V; –In = 0V
@ –7 < +In < 0V; –In = 0V
400
150
KΩ
KΩ
I
ilk 7-8
Input Offset Current
V+In = V–In
0V < Vi <5.5V
+Ii
–Ii
–20
–75
+20
+50
µA
µA
–25
–In = GND
0V < V+In <5.5V
+Ii
+10
–125
µA
µA
–Ii –250
+In = GND
0V < V–In <5.5V
+Ii –100
–30
–15
µA
µA
–Ii
–50
V
oth1 2
oth2 2
ohys 2
Output Status Threshold 1
Voltage
(See fig. 1)
(See fig. 1)
(See fig. 1)
12
V
V
V
V
Output Status Threshold 2
Voltage
9
0.3
2
V
Output Status Threshold
Hysteresis
0.7
2
Iosd 4
Output Status Source Current
Vout > Voth1, Vos = 2.5V
Vs – Vos @ Ios = 2mA;
4
5
mA
V
Vosd 3-4
Active Output Status Driver
Drop Voltage
T
amb = -25 to 85°C
Ioslk
4
Output Status Driver Leakage
Current
Vout < Voth2 , Vos = 0V
VS = 18 to 35V
25
µA
Vdgl 5/6
Idglk 5/6
Diagnostic Drop Voltage
D1 / D2 = L @ Idiag = 0.5mA
D1 / D2 = L @ Idiag = 3mA
250
1.5
mV
V
Diagnostic Leakage Current
D1 / D2 =H @ 0 < Vdg < Vs
VS = 15.6 to 35V
25
µA
Vfdg 5/6-3
Clamping Diodes at the
Diagnostic Outputs.
Voltage Drop to VS
@ Idiag = 5mA; D1 / D2 = H
2
V
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.
All test not dissipative.
3/12
TDE1897R - TDE1898R
SOURCE DRAIN NDMOS DIODE
Symbol
Vfsd 2-3
Ifp 2-3
Parameter
Forward On Voltage
Test Condition
@ Ifsd = 625mA
Min.
Typ.
Max.
1.5
2
Unit
V
1
Forward Peak Current
Reverse Recovery Time
Forward Recovery Time
t = 10ms; d = 20%
A
trr 2-3
If = 625mA di/dt = 25A/µs
200
50
ns
ns
tfr 2-3
THERMAL CHARACTERISTICS (*)
Θ Lim
Junction Temp. Protect.
Thermal Hysteresis
135
150
30
°C
°C
TH
SWITCHING CHARACTERISTICS (VS = 24V; RL = 48Ω) (*)
ton
toff
td
Turn on Delay Time
Turn off Delay Time
100
20
µs
µs
µs
Input Switching to Diagnostic
Valid
100
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.
(*) Not tested.
Figure 1
DIAGNOSTIC TRUTH TABLE
Diagnostic Conditions
Input
Output
Diag1
Diag2
Normal Operation
L
H
L
H
H
H
H
H
Open Load Condition (Io < Iold
Short to VS
)
L
H
L
H
H
L
H
H
L
H
H
H
L
L
H
H
Short Circuit to Ground (IO = ISC
)
(**)
TDE1897R
TDE1898R
H
H
<H (*)
H
L
H
L
H
H
H
H
Output DMOS Open
Overtemperature
L
H
L
L
H
L
H
H
L
H
L
L
H
H
L
L
Supply Undervoltage (VS < Vsth1 in the falling phase of the
supply voltage; VS < Vsth2 in the rising phase of the supply
voltage)
L
H
L
L
L
L
L
L
(*) According to the intervention of the current limiting block.
(**) Acold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897
uses Diag2 to signal such condition, TDE1898 does not.
4/12
TDE1897R - TDE1898R
APPLICATION INFORMATION
Figure 3: DemagnetizationCycle Waveforms
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(Vcl), provides safe and fast demagnetization of
inductiveloads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
Tj = 85°C).
To define the maximumswitching frequencythree
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2) The total energy W dissipated in the device
during a demagnetizationcycle (figg. 2, 3) is:
Vcl – Vs
RL
V
s
Vcl – Vs
L
RL
W = Vcl
Io –
log 1 +
Where:
Vcl = clamp voltage;
L =inductive load;
RL = resistive load;
Vs = supply voltage;
IO = ILOAD
3) In normal conditions the operating Junction
temperature should remain below 125°C.
Figure 4: Normalized RDSON vs. Junction
Figure 2: InductiveLoad Equivalent Circuit
Temperature
D93IN018
α
1.8
RDSON (Tj)
α=
RDSON (Tj=25°C)
1.6
1.4
1.2
1.0
0.8
0.6
-25
0
25
50
75
100 125
Tj (°C)
5/12
TDE1897R - TDE1898R
the third element are constant, while the first
one increases with temperature because
RDSON increasesas well.
WORST CONDITION POWER DISSIPATION IN
THE ON-STATE
In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered cur-
rent (and related power), thermal characteristics
of the packageand ambient temperature.
At ambient temperature close to upper limit
(+85°C) and in the worst operating conditions, it is
possible that the chip temperature could increase
so much to make the thermal shutdown proce-
dure untimely intervene.
3) The chip temperature must not exceed ΘLim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system device-
board-ambient (Rth). In steady state condi-
tions, this parameter relates the power dissi-
pated Pon to the silicon temperature Tj and
the ambient temperature Tamb
:
Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient tem-
perature. To this end, we should consider the fol-
lowing points:
T j ± T amb = P on R th
(2)
From this relationship, the maximum power Pon
which can be dissipated without exceeding
ΘLim at a given ambient temperature Tamb is:
1) The ON resistance RDSON of the output
NDMOS (the real switch) of the device in-
creases with its temperature.
ΘLim ± T amb
P on
=
R
th
Experimentalresults show that silicon resistiv-
ity increases with temperature at a constant
rate, rising of 60% from 25°C to 125°C.
The relationship between RDSON and tem-
perature is therefore:
Replacing the expression (1) in this equation
and solving for Iout, we can find the maximum
current versus ambient temperature relation-
ship:
± 25 )
j
R
DSON = R DSON0 ( 1 + k ) ( T
where:
ΘLim ± T amb
± P q ± P os
R th
Tj is the silicon temperature in °C
R
DSON0 is RDSON at Tj=25°C
I outx
=
√
k is the constant rate (k = 4.711 10 ±3)
R
DSONx
(see fig. 4).
where RDSONx is RDSON at Tj=ΘLim. Of
course, Ioutx values are top limited by the
maximum operative current Ioutx (500mA
nominal).
2) In the ON state the power dissipated in the
device is due to three contributes:
From the expression (2) we can also find the
maximum ambient temperature Tamb at which
a given power Pon can be dissipated:
a) power lost i2n the switch:
P
out = I out
R DSON (Iout is the output cur-
rent);
T
amb = ΘLim ± P
R th =
on
b) power due to quiescent current in the ON
state Iq, sunk by the device in addition to
Iout: P q = I q V s (Vs is the supply voltage);
2
= ΘLim ± ( I out
R DSONx + P q + P os ) R
th
In particular, this relation is useful to find the
maximum ambient temperature Tambx at
which Ioutx can be delivered:
c) an external LED could be used to visualize
the switch state (OUTPUT STATUS pin).
Such a LED is driven by an internal current
source (delivering Ios) and therefore,if Vos is
the voltagedrop across the LED, the dissi-
pated power is: P os = I os ( V s ± V os ).
2
T ambx = ΘLim ± ( I outx R DSONx
+ P q + P os ) R th
+
(4)
Thus the total ON state power consumptionis
given by:
Referring to application circuit in fig. 5, let us con-
sider the worst case:
P
on = P out + P q + P os
(1)
- The supply voltage is at maximum value of in-
dustrial bus (30V instead of the 24V nominal
value). This means also that Ioutx rises of 25%
In the right side of equation 1, the second and
6/12
TDE1897R - TDE1898R
(625mA instead of 500mA).
From equation 4, we can find:
- All electrical parameters of the device, con-
cerning the calculation, are at maximum val-
ues.
Tambx = 66.7°C (Minidip);
73.5°C(SO20);
87.2°C(SIP9).
- Thermal shutdown threshold is at minimum
value.
Therefore, the IPS TDE1897/1898, although
guaranteed to operate up to 85°C ambient tem-
perature, if used in the worst conditions,can meet
some limitations.
- No heat sink nor air circulation (Rth equal to
Rthj-amb).
SIP9 package, which has the lowest Rthj-amb, can
work at maximum operative current over the en-
tire ambient temperature range in the worst condi-
tions too. For other packages, it is necessary to
consider some reductions.
With the aid of equation 3, we can draw a derat-
ing curve giving the maximum current allowable
versus ambient temperature. The diagrams, com-
puted using parameter values above given, are
depicted in figg. 6 to 8.
Therefore:
Vs = 30V, RDSON0 = 0.6Ω, Iq = 6mA, Ios = 4mA @
Vos = 2.5V, ΘLim = 135°C
Rthj-amb = 100°C/W (Minidip); 90°C/W (SO20);
70°C/W (SIP9)
It follows:
Ioutx = 0.625mA, RDSONx = 1.006Ω, Pq = 180mW,
If an increase of the operating area is needed,
heat dissipation must be improved (Rth reduced)
e.g. by means of air cooling.
Pos = 110mW
Figure 5: Application Circuit.
DC BUS 24V +/-25%
+Vs
+IN
-IN
+
-
CONTROL
OUTPUT
LOGIC
D1
D2
µP POLLING
Ios
LOAD
GND
OUTPUT STATUS
D93IN014
7/12
TDE1897R - TDE1898R
Figure 6: Max. Output Current vs. Ambient
Temperature(Minidip Package,
Rth j-amb = 100°C/W)
Figure 7: Max. Output Current vs. Ambient
Temperature (SO20 Package,
Rth j-amb = 90°C/W)
D93IN016
D93IN015
(mA)
600
500
400
300
200
100
0
(mA)
600
500
400
300
200
100
0
0
20
40
60
80
100 (°C)
0
20
40
60
80
100 (°C)
Figure 8: Max. Output Current vs. Ambient
Temperature(SIP9 Package,
Rth j-amb = 70°C/W)
D93IN017
(mA)
600
500
400
300
200
100
0
0
20
40
60
80
100 (°C)
8/12
TDE1897R - TDE1898R
MINIDIP PACKAGE MECHANICAL DATA
mm
inch
DIM
Min.
Typ.
Max.
Min.
Typ.
Max.
A
a1
B
3.32
0.131
0.51
1.15
0.020
0.045
0.014
0.008
1.65
0.55
0.065
0.022
0.012
0.430
0.384
b
0.356
0.204
b1
D
E
0.304
10.92
9.75
7.95
0.313
e
2.54
7.62
7.62
0.100
0.300
0.300
e3
e4
F
6.6
0260
0.200
0.150
0.060
i
5.08
3.81
1.52
L
3.18
0.125
Z
9/12
TDE1897R - TDE1898R
SIP9 PACKAGE MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
7.1
3
MIN.
MAX.
0.280
0.118
0.90
A
a1
B
2.7
0.106
23
B3
b1
b3
C
24.8
0.976
0.5
0.020
0.85
1.6
0.033
0.063
0.835
3.3
0.130
0.017
0.052
c1
c2
D
0.43
1.32
21.2
d1
e
14.5
2.54
0.571
0.100
0.800
e3
L
20.32
3.1
0.122
0.685
L1
L2
L3
L4
M
3
0.118
0.693
17.6
0.25
0.010
0,702
17.4
17.85
3.2
1
0.126
0.039
N
P
0.15
0.006
C
D
c2
N
P
M
1
9
b1
b3
e
c1
e3
B
SIP9
B3
10/12
TDE1897R - TDE1898R
SO20 PACKAGE MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
2.65
0.2
MIN.
TYP.
MAX.
0.104
0.008
0.096
0.019
0.013
A
a1
a2
b
0.1
0.004
2.45
0.49
0.32
0.35
0.23
0.014
0.009
b1
C
0.5
0.020
c1
D
45° (typ.)
12.6
10
13.0
0.496
0.394
0.510
0.419
E
10.65
e
1.27
0.050
0.450
e3
F
11.43
7.4
0.5
7.6
0.291
0.020
0.300
0.050
0.030
L
1.27
0.75
M
S
8° (max.)
11/12
TDE1897R - TDE1898R
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-
THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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12/12
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