TDE3237DP [STMICROELECTRONICS]
INTELLIGENT POWER SWITCH; 智能功率开关
| 型号： | TDE3237DP |
| 厂家： | 
ST |
| 描述： | INTELLIGENT POWER SWITCH |
| 文件： | 总7页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TDE3237
INTELLIGENT POWER SWITCH
ADVANCE DATA
HIGH OUTPUT CURRENT
ADJUSTABLE SHORT-CIRCUIT PROTECTION
INTERNAL THERMAL PROTECTION WITH
HYSTERESIS TO AVOID THE INTERMEDI-
ATE OUTPUT LEVELS
LARGE SUPPLY VOLTAGE RANGE: 8 TO 30V
Minidip
ORDERING NUMBERS:
TDE3237DP TDE3237FP
SO14
DESCRIPTION
The TDE3237 is a monolithic amplifier designed
for high-current and high-voltage applications,
specIally to drive lamps, relays and stepping mo-
tors.
The device is essentially blow-out proof. Current
limiting is available to limit the peak output current
to a safe value, the adjustment only requires one
external resistor. In addition, thermal shut down is
provided to keep the IC from overheating. If exter-
nal dissipation becomes too great, the driver will
shut down to prevent excessive heating.
The output is also protected from short-circuits
with the positive power supply.
The device operates over a wide range of supply
voltages from standard ±15V operational amplifier
supplies down to the single 12V or 24V used for
industrial electronic systems.
PIN CONNECTIONS
Minidip
SO14
1/7
November 1991
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without
T
TDE3237
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
VCC
VID
VI
Supply Voltage
36
36
Differantial Input Voltage
Input Voltage
V
36
V
IO
Output Current
500
mA
W
Ptot
Tstg
Toper
Power Dissipation
Internally Limited
– 65 to + 150
– 25 to + 85
Storage Temperature Range
°C
°C
Operating Free-air Temperature Range
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
50
Unit
Rth(j-c)
Rth(j-a)
Maximum Junction-case Thermal Resistance (note 1)
Maximum Junction-ambient Thermal Resistance (note 1)
Junction-ceramic Substrate (case glued to substrate)
Minidip
Minidip
SO14
°C/W
°C/W
°C/W
120
90
Junction-ceramic Substrate (case glued to substrate, substrate temperature
maintened constant)
SO14
65
°C/W
Note : 1. Devices bonded on 40 cm glass-epoxy printed circuit 0.15cm thick with 4cm2 of copper
SCHEMATIC DIAGRAM
2/7
TDE3237
ELECTRICAL CHARACTERISTICS Tamb = – 25 to +85 °C, VCC = 8 to ≤30 V, unless otherwise speci-
fied (note 1).
Symbol
VIO
Parameter
Input Offset Voltage - (note 3)
Min.
Typ.
2
Max.
50
Unit
mV
µA
mA
V
–
–
–
2
–
–
IIB
Input Bias Current
0.1
3
1.5
5
ICC
Supply Current (VCC = + 24 V, IO = 0)
Common-mode Input Voltage Range
Short-circuit Current Limit (Tcase = + 25 °C, RSC = 3.3 Ω )
VCM
–
VCC–2
–
ISC
230
1
-mA
V
VCC–VO
Output Saturation Voltage (output high)
(RSC = 0, VI+–VI– ≥ 50 mV, IO = 150 mA
1.5
IOL
Low Level Output Current
(VO = VCC = + 24 V Tamb = + 25 °C)
–
–
100
µA
Notes :
2) For operating athigh temperature, the TDE3237, must be derated based on a + 150 C maximum junction temperature and a junction-ambient
thermal as showed in the thermal characteristics data base.
3) The offset voltage given is the maximum value of input voltage required to drive the output voltage within 2 V of the ground or the supply
voltage.
SIMPLIFIED SCHEMATIC
3/7
TDE3237
4/7
TDE3237
SO14 PACKAGE MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.6
MIN.
TYP.
MAX.
0.069
0.009
0.063
0.018
0.010
A
a1
a2
b
0.1
0.004
0.35
0.19
0.46
0.25
0.014
0.007
b1
C
0.5
0.020
c1
D
45 (typ.)
8.55
5.8
8.75
6.2
0.336
0.228
0.344
0.244
E
e
1.27
7.62
0.050
0.300
e3
F
3.8
0.4
4.0
0.15
0.157
0.050
0.027
L
1.27
0.68
0.016
M
S
8 (max.)
5/7
TDE3237
MINIDIP PACKAGE MECHANICAL DATA
mm
inch
TYP.
0.131
DIM.
MIN.
TYP.
MAX.
MIN.
MAX.
A
a1
B
3.32
0.51
1.15
0.020
0.045
0.014
0.008
1.65
0.55
0.065
0.022
0.012
0.430
0.384
b
0.356
0.204
b1
D
E
0.304
10.92
9.75
7.95
0.313
e
2.54
7.62
7.62
0.100
0.300
0.300
e3
e4
F
6.6
0.260
0.200
0.150
0.060
I
5.08
3.81
1.52
L
3.18
0.125
Z
6/7
TDE3237
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men-
tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex-
press written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore -
Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
7/7
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