STT5PF20V [STMICROELECTRONICS]
P-CHANNEL 20V - 0.065W - 5A SOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET; P沟道20V - 0.065W - 5A SOT23-6L 2.5V -DRIVE的STripFET II功率MOSFET
| 型号： | STT5PF20V |
| 厂家： | 
ST |
| 描述： | P-CHANNEL 20V - 0.065W - 5A SOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET |
| 文件： | 总8页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STT5PF20V
P-CHANNEL 20V - 0.065Ω - 5A SOT23-6L
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
V
R
DS(on)
I
D
DSS
< 0.080 Ω (@4.5V)
< 0.10 Ω (@2.5V)
STT5PF20V
20 V
5 A
■
■
■
■
TYPICAL R (on) = 0.065Ω (@4.5V)
DS
TYPICAL R (on) = 0.085Ω (@2.5V)
DS
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SOT23-6L
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
MOBILE PHONE APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
SOT23-6L
PACKAGING
STT5PF20V
STPN
TAPE & REEL
October 2003
1/8
STT5PF20V
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
20
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
20
V
DGR
GS
V
Gate- source Voltage
± 8
5
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
3.1
20
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
1.6
W
C
( ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
Rthj-amb
Thermal Resistance Junction-ambient Max
Max. Operating Junction Temperature
Storage Temperature
78
150
°C/W
°C
T
j
T
stg
–55 to 150
°C
ELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)
J
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
20
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ± 8V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
GS(th)
V
DS
V
GS
V
GS
= V , I = 250µA
Gate Threshold Voltage
0.45
GS
D
R
Static Drain-source On
Resistance
= 4.5V, I = 2.5 A
0.065
0.085
0.080
0.10
Ω
DS(on)
D
= 2.5V, I = 2.5 A
Ω
D
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
Typ.
6.6
Max.
Unit
S
g
(1)
V
= 15 V I = 2.5 A
DS , D
fs
C
C
V
= 15 V, f = 1 MHz, V = 0
DS GS
412
179
42.5
pF
pF
pF
iss
Output Capacitance
oss
C
rss
Reverse Transfer
Capacitance
2/8
STT5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 10 V, I = 2.5 A
Turn-on Delay Time
11
ns
d(on)
DD
D
= 4.7Ω V = 2.5 V
G
GS
t
Rise Time
47
ns
r
(see test circuit, Figure 1)
Q
V
V
= 10 V, I = 5 A,
= 2.5V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
4.5
0.73
1.75
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
(see test circuit, Figure 2)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
DD
= 10 V, I = 2.5 A,
38
20
ns
ns
d(off)
D
t
f
R = 4.7Ω, V = 2.5 V
G GS
(see test circuit, Figure 1)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
5
Unit
A
I
Source-drain Current
SD
I
Source-drain Current (pulsed)
Forward On Voltage
20
A
SDM
V
(1)
I
I
= 5 A, V = 0
1.2
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
32
12.8
0.8
ns
nC
A
= 5 A, di/dt = 100A/µs,
= 16 V, T = 150°C
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 3)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
3/8
STT5PF20V
Safe Operating Area
Thermal Impedence Junction-PCB
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STT5PF20V
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STT5PF20V
Fig. 1: Switching Times Test Circuit For
Fig. 2: Gate Charge test Circuit
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
6/8
STT5PF20V
TSOP-6 MECHANICAL DATA
mm
mils
DIM.
MIN.
0.90
0.00
0.90
0.25
0.09
2.80
2.60
1.50
0.35
TYP.
MAX.
1.45
0.15
1.30
0.50
0.20
3.10
3.00
1.75
0.55
MIN.
0.035
0.000
0.035
0.010
0.004
0.110
0.102
0.059
0.014
TYP.
MAX.
0.057
0.006
0.051
0.020
0.008
0.122
0.118
0.069
0.022
A
A1
A2
b
C
D
E
E1
L
e
0.95
1.90
0.037
0.075
e1
A
A2
L
e
b
c
A1
E
e1
D
E1
7/8
STT5PF20V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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