STS10NF30L [STMICROELECTRONICS]
N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET; N - CHANNEL 30V - 0.011ohm - 10A型SO-8的STripFET功率MOSFET
| 型号： | STS10NF30L |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET |
| 文件： | 总6页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS10NF30L
N - CHANNEL 30V - 0.011Ω - 10A SO-8
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STS10NF30L
30 V
< 0.0135 Ω
10 A
■
■
TYPICAL RDS(on) = 0.011 Ω
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
■
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique ” Single Feature
Size
” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
SO-8
therefore
a
remarkable
manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
■
POWER MANAGEMENT IN
PORTABLE/DESKTOPPCs
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
30
Unit
V
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
VDGR
VGS
30
V
± 20
V
o
ID
Drain Current (continuous) at Tc = 25 C
10
6.5
A
A
o
Drain Current (continuous) at Tc = 100 C
IDM(• )
Drain Current (pulsed)
40
A
Ptot
Total Dissipation at Tc = 25 oC
2.5
W
(•) Pulse width limited by safe operating area
1/6
June 2000
STS10NF30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient
50
150
-55 to 150
oC/W
oC
Maximum Operating Junction Temperature
Tj
Storage Temperature
oC
T
stg
(*)
≤ 10
sec)
Mounted on FR-4board (t
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwisespecified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
30
V
IDSS
IGSS
VDS = Max Rating
1
10
µA
A
µ
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON (
)
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
1
1.6
2.5
V
RDS(on)
Static Drain-source On VGS = 10 V ID = 5 A
0.011 0.0135
0.016 0.0220
Ω
Ω
Resistance
VGS = 4.5 V ID = 5 A
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
10
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 5 A
Min.
Typ.
Max.
Unit
gfs ( )
20
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 V
1450
390
150
pF
pF
pF
2/6
STS10NF30L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
RG = 4.7
ID = 5 A
VGS = 4.5 V
25
280
ns
ns
Ω
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 24 V ID = 10 A VGS = 10 V
25
11
12
35
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
RG = 4.7 Ω
ID = 5 A
VGS = 4.5 V
40
60
ns
ns
(Resistive Load, see fig. 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
•
VSD ( ) Forward On Voltage
ISD = 10 A VGS = 0
1.2
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 10 A
VDD = 15 V
(see test circuit, fig. 5)
di/dt = 100 A/µs
Tj = 150 oC
45
52
ns
Qrr
nC
A
IRRM
2.3
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
•
3/6
STS10NF30L
Fig. 1:
Fig. 2:
UnclampedInductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
4/6
STS10NF30L
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
5/6
STS10NF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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6/6
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