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STS10PF30L [STMICROELECTRONICS]

P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET; P沟道30V - 0.012Ohm - 10A型SO-8的STripFET II功率MOSFET
STS10PF30L
型号： STS10PF30L
厂家： ST    ST
描述：

P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET
P沟道30V - 0.012Ohm - 10A型SO-8的STripFET II功率MOSFET

晶体 小信号场效应晶体管 开关 光电二极管
文件： 总9页 (文件大小：200K)
中文：  中文翻译
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STS10PF30L  
P-CHANNEL 30V - 0.012 Ω - 10A SO-8  
STripFET™ II POWER MOSFET  
Figure 1:Package  
Table 1: General Features  
V
R
I
TYPE  
DSS  
DS(on)  
D
STS10PF30L  
30V  
<0.014 Ω  
10 A  
■
■
TYPICAL RDS(on) = 0.012 Ω  
STANDARDOUTLINEFOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
■
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance.  
SO-8  
APPLICATIONS  
■
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
Figure 2: Internal Schematic Diagram  
■
LOAD SWITCH  
Table 2: Order Codes  
SALES TYPE  
MARKING  
PACKAGE  
PACKAGING  
STS10PF30L  
S10PF30L  
SO-8  
TAPE & REEL  
Table 3: ABSOLUTE MAXIMUM RATING  
Symbol  
Parameter  
Value  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
30  
30  
GS  
V
DGR  
Drain-gate Voltage (R = 20 kΩ)  
V
GS  
V
Gate- source Voltage  
± 16  
10  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
6
A
D
C
I
(•)  
Drain Current (pulsed)  
40  
A
DM  
P
tot  
Total Dissipation at T = 25°C  
2.5  
W
C
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
Rev. 2.0  
May 2005  
1/9  
STS10PF30L  
Table 4: THERMAL DATA  
(*)  
Rthj-amb  
Rthj-lead  
Max  
Max  
Typ  
47  
16  
150  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient  
Thermal Resistance Junction-leads  
Maximum Lead Temperature For Soldering Purpose  
storage temperature  
T
l
T
stg  
-55 to 150  
°C  
(*)  
2
When Mounted on 1 inch FR-4 board, 2 oz of Cu and t 10 sec.  
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)  
Table 5: OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
D
= 250 µA, V = 0  
30  
V
GS  
V
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 16 V  
±100  
nA  
GSS  
Current (V = 0)  
DS  
Table 6: ON (*)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
DS  
= V  
I = 250 µA  
D
Gate Threshold Voltage  
1
V
GS(th)  
GS  
V
V
= 10 V  
= 4.5 V  
I
= 5 A  
= 5 A  
Static Drain-source On  
Resistance  
0.012  
0.015  
0.014  
0.018  
Ω
Ω
GS  
D
R
DS(on)  
I
GS  
D
Table 7: DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 10 V = 5 A  
Min.  
Typ.  
Max.  
Unit  
V
V
I
D
g
Forward Transconductance  
31  
S
DS  
fs  
= 25V, f = 1 MHz, V = 0  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
2300  
750  
115  
pF  
pF  
pF  
iss  
DS  
GS  
C
oss  
C
rss  
2/9  
STS10PF30L  
ELECTRICAL CHARACTERISTICS (continued)  
Table 8: SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 15 V  
Min.  
Typ.  
Max.  
Unit  
V
R
I
D
= 5 A  
t
Turn-on Delay Time  
Rise Time  
72  
87  
ns  
ns  
DD  
d(on)  
= 4.7 Ω  
V
= 4.5 V  
GS  
t
G
r
(Resistive Load, Figure 15)  
Q
V
= 15V I = 10A V =4.5V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
29  
6.8  
7.6  
39  
nC  
nC  
nC  
g
DD  
D
GS  
Q
gs  
Q
(see test circuit, Figure 16)  
gd  
Table 9: SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 15 V  
I
D
= 5 A  
Turn-off Delay Time  
Fall Time  
89  
27  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 4.5 V  
GS  
t
f
G
(Resistive Load, Figure 15)  
Table 10: SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
10  
40  
A
A
SD  
I
SDM  
(*)  
I
I
= 10 A  
V
= 0  
GS  
V
Forward On Voltage  
1.2  
V
SD  
SD  
t
rr  
= 10 A  
= 15 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
48.5  
68  
2.8  
ns  
nC  
A
SD  
Q
V
rr  
DD  
j
I
(see test circuit, Figure 17)  
RRM  
(*)  
(•)  
Pulse width 300 µs, duty cycle 1.5 %.  
Pulse width limited by T  
JMAX  
Figure 3: Safe Operating Area  
Figure 4: Thermal Impedance  
3/9  
STS10PF30L  
Figure 5: Output Characteristics  
Figure 6: Transfer Characteristics  
Figure 7: Transconductance  
Figure 8: Static Drain-source On Resistance  
Figure 9: Gate Charge vs Gate-source Voltage  
Figure 10: Capacitance Variations  
4/9  
STS10PF30L  
Figure 11: Normalized Gate Threshold Voltage vs  
Temperature  
Figure 12: Normalized on Resistance vs Temperature  
Figure 13: Source-drain Diode Forward  
Characteristics  
Figure 14: Normalized Breakdown Voltage vs  
Temperature.  
.
.
5/9  
STS10PF30L  
Fig. 15: Switching Times Test Circuits For Resis-  
tive Load  
Fig. 16: Gate Charge test Circuit  
Fig. 17: Test Circuit For Diode Recovery Behav-  
iour  
6/9  
STS10PF30L  
SO-8 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
S
8 (max.)  
0016023  
7/9  
STS10PF30L  
Table 11:Revision History  
Date  
Revision  
Description of Changes  
May 2005  
2.0  
completed whit curves  
8/9  
STS10PF30L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
All other names are the property of their respective owners.  
© 2005 STMicroelectronics - All Rights Reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America.  
www.st.com  
9/9  

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