STPS30L30CG [STMICROELECTRONICS]

LOW DROP POWER SCHOTTKY RECTIFIER; 电力低压降肖特基整流器
STPS30L30CG
型号: STPS30L30CG
厂家: ST    ST
描述:

LOW DROP POWER SCHOTTKY RECTIFIER
电力低压降肖特基整流器

整流二极管
文件: 总5页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
STPS30L30CT/CG/CR  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 15 A  
30 V  
K
Tj (max)  
VF (max)  
150 °C  
0.37 V  
K
FEATURES AND BENEFITS  
A2  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD VOLTAGE DROP  
LOW THERMAL RESISTANCE  
A2  
A1  
K
A1  
D2PAK  
TO-220AB  
STPS30L30CT  
STPS30L30CG  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Dual center tap Schottky rectifiers suited for  
Switch Mode Power Supply and high frequency  
DC to DC converters.  
A2  
K
A1  
Packaged in TO-220AB, D2PAK and I²PAK, these  
devices are intended for use in low voltage, high  
frequency inverters, free-wheeling and polarity  
protection applications.  
I2PAK  
STPS30L30CR  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
30  
V
IF(RMS)  
IF(AV)  
30  
A
A
RMS forward current  
15  
30  
Average forward current  
Tc = 140°C  
δ = 0.5  
Per diode  
Per device  
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
220  
A
A
Surge non repetitive forward current  
Peak repetitive reverse current  
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp = 2 µs F = 1kHz square  
tp = 100µs square  
1
3
A
5300  
W
tp = 1µs Tj = 25°C  
- 65 to + 150  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise reverse voltage  
dV/dt  
10000  
July 2003 - Ed: 5C  
1/5  
STPS30L30CT/CG/CR  
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
Unit  
Rth (j-c)  
Rth (c)  
When the diodes 1 and 2 are used simultaneously :  
Per diode  
Total  
Coupling  
1.5  
0.8  
0.1  
°C/W  
Junction to case  
°C/W  
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS (per diode)  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max.  
Unit  
IR *  
1.5  
mA  
Reverse leakage cur- Tj = 25°C  
VR = VRRM  
rent  
170  
0.33  
0.43  
350  
0.46  
0.37  
0.57  
0.5  
mA  
V
Tj = 125°C  
VF *  
Forward voltage drop Tj = 25°C  
Tj = 125°C  
IF = 15 A  
IF = 15 A  
IF = 30 A  
IF = 30 A  
Tj = 25°C  
Tj = 125°C  
Pulse test : * tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation :  
2
P = 0.24x IF(AV) + 0.009 IF (RMS)  
Fig. 1: Average forward power dissipation versus  
average forward current (per diode).  
Fig. 2: Average current versus ambient  
temperature (δ=0.5) (per diode).  
IF(av)(A)  
PF(av)(W)  
16  
10  
9
14  
Rth(j-a)=Rth(j-c)  
δ = 0.2  
δ = 0.1  
δ = 0.5  
8
7
6
5
4
3
2
1
0
δ = 0.05  
12  
Rth(j-a)=15°C/W  
10  
δ = 1  
8
Rth(j-a)=50°C/W  
6
T
T
4
2
IF(av) (A)  
Tamb(°C)  
tp  
=tp/T  
tp  
=tp/T  
δ
δ
0
0
2
4
6
8
10 12 14 16 18 20  
0
25  
50  
75  
100  
125  
150  
Fig. 3: Normalized avalanche power derating  
versus pulse duration.  
Fig. 4: Normalized avalanche power derating  
versus junction temperature.  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
2/5  
STPS30L30CT/CG/CR  
Fig. 4: Non repetitive surge peak forward current  
versus overload duration (maximum values) (per  
diode).  
Fig. 5: Relative variation of thermal transient  
impedance junction to case versus pulse duration.  
Zth(j-c)/Rth(j-c)  
IM(A)  
250  
1.0  
225  
200  
175  
0.8  
150  
δ = 0.5  
0.6  
Tc=25°C  
125  
Tc=75°C  
100  
0.4  
δ = 0.2  
Tc=110°C  
75  
T
δ = 0.1  
IM  
50  
0.2  
t
25  
0
t(s)  
tp(s)  
tp  
=tp/T  
δ
δ=0.5  
Single pulse  
0.0  
1E-4  
1E-3  
1E-2  
1E-1  
1E+0  
1E-3  
1E-2  
1E-1  
1E+0  
Fig. 6: Reverse leakage current versus reverse  
voltage applied (typical values) (per diode).  
Fig. 7: Junction capacitance versus reverse  
voltage applied (typical values) (per diode).  
IR(mA)  
C(nF)  
1E+3  
5.0  
Tj=150°C  
F=1MHz  
Tj=25°C  
1E+2  
Tj=125°C  
1E+1  
1.0  
1E+0  
Tj=25°C  
1E-1  
VR(V)  
0.1  
VR(V)  
1
2
5
10  
20  
50  
1E-2  
0
5
10  
15  
20  
25  
30  
Fig. 8: Forward voltage drop versus forward  
current (maximum values - per diode).  
Fig. 9: Thermal resistance junction to ambient  
versus copper surface under tab (epoxy printed  
circuit board FR4, e(Cu) = 35 µm)  
(STPS30L30CG).  
IFM(A)  
Rth(j-a) (°C/W)  
200  
80  
70  
60  
50  
40  
30  
20  
100  
Tj=150°C  
(typical values)  
Tj=125°C  
10  
Tj=25°C  
10  
S(Cu) (cm²)  
VFM(V)  
0
0
4
8
12 16 20 24 28 32 36 40  
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
3/5  
STPS30L30CT/CG/CR  
PACKAGE MECHANICAL DATA  
TO-220AB  
DIMENSIONS  
Millimeters Inches  
Min. Max.  
4.40 4.60  
REF.  
A
H2  
Min.  
Max.  
Dia  
A
C
D
E
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.181  
0.051  
0.107  
0.027  
0.034  
0.066  
0.066  
0.202  
0.106  
0.409  
C
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
L5  
L7  
L6  
L2  
F2  
D
F1  
L9  
16.4 typ.  
0.645 typ.  
L4  
13  
14  
0.511  
0.104  
0.600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.259  
0.154  
F
2.65  
15.25  
6.20  
3.50  
2.95  
15.75  
6.60  
3.93  
M
G1  
E
G
2.6 typ.  
0.102 typ.  
Diam.  
3.75  
3.85  
0.147  
0.151  
Cooling method: C  
Recommended torque value: 0.55 m.N  
Maximum torque value: 0.70 m.N  
PACKAGE MECHANICAL DATA  
I2PAK  
DIMENSIONS  
Millimeters Inches  
Max.  
REF.  
Min.  
4.40  
2.49  
0.70  
1.14  
1.14  
0.45  
1.23  
8.95  
2.40  
10.0  
13.1  
3.48  
1.27  
Min.  
Max.  
0.181  
0.106  
0.037  
0.046  
0.046  
0.024  
0.054  
0.368  
0.106  
0.409  
0.535  
0.149  
0.055  
A
A
A1  
b
4.60  
2.69  
0.93  
1.17  
1.17  
0.60  
1.36  
9.35  
2.70  
10.4  
13.6  
3.78  
1.40  
0.173  
0.098  
0.028  
0.044  
0.044  
0.018  
0.048  
0.352  
0.094  
0.394  
0.516  
0.137  
0.050  
E
c2  
L2  
b1  
b2  
c
D
c2  
D
L1  
A1  
e
b2  
L
E
b1  
L
L1  
L2  
b
c
e
4/5  
STPS30L30CT/CG/CR  
DIMENSIONS  
PACKAGE MECHANICAL DATA  
D2PAK  
REF.  
Millimeters  
Inches  
A
E
Min.  
Max.  
Min.  
Max.  
C2  
L2  
L3  
A
A1  
A2  
B
B2  
C
C2  
D
E
G
L
L2  
L3  
M
4.40  
2.49  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
2.40  
4.60  
2.69  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
10.40  
5.28  
15.85  
1.40  
1.75  
3.20  
0.173  
0.098  
0.001  
0.027  
0.045  
0.017  
0.048  
0.352  
0.393  
0.192  
0.590  
0.050  
0.055  
0.094  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
0.409  
0.208  
0.624  
0.055  
0.069  
0.126  
D
L
A1  
B2  
B
R
C
G
A2  
R
V2  
0.40 typ.  
0.016 typ.  
M
*
V2  
0°  
8°  
0°  
8°  
* FLAT ZONE NO LESS THAN 2mm  
FOOT PRINT (in millimeters)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
Ordering type  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STPS30L30CT  
STPS30L30CG  
STPS30L30CG-TR  
STPS30L30CR  
STPS30L30CT  
STPS30L30CG  
STPS30L30CG  
STPS30L30CR  
TO-220AB  
D2PAK  
D2PAK  
I2PAK  
2g  
50  
50  
1000  
50  
Tube  
Tube  
Tape & reel  
Tube  
1.8g  
1.8g  
1.49g  
Epoxy meets UL94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
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http://www.st.com  
5/5  

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