STPS160AFN [STMICROELECTRONICS]
Rectifier Diode;
| 型号： | STPS160AFN |
| 厂家： | 
ST |
| 描述： | Rectifier Diode |
| 文件： | 总6页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS160A/U
®
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
1 A
60 V
Tj (max)
VF (max)
150°C
0.57 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNTED DEVICE
SMA
SMB
(JEDEC DO-214AC)
STPS160A
(JEDEC DO-214AA)
STPS160U
DESCRIPTION
Single chip Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in SMA or SMB, this device is intended
for surface mounting and used in low voltage, high
frequency inverters, free wheeling and polarity pro-
tection applications.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Repetitive peak reverse voltage
Value
60
Unit
V
VRRM
IF(RMS) RMS forward current
10
A
IF(AV)
IFSM
IRRM
Average forward current
TLead = 130°C
1
A
δ
= 0.5
Surge non repetitive forward current
Repetitive peak reverse current
tp = 10 ms
Sinusoidal
75
1
A
A
µ
tp = 2 s square
F = 1kHz
µ
IRSM
Tstg
Tj
Non repetitive peak reverse current
Storage temperature range
tp = 100 s square
1
- 65 to + 150
150
A
°C
Maximum junction temperature *
Critical rate of rise of reverse voltage
µ
V/ s
dV/dt
10000
dPtot
dTj
1
<
* :
thermal runaway condition for a diode on its own heatsink
Rth(j−a)
July 1999 - Ed: 5A
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STPS160A/U
THERMAL RESISTANCES
Symbol
Parameter
Value
30
Unit
°
Rth (j-l)
Junction to lead
C/W
SMA
SMB
23
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Tests Conditions
Tests Conditions
Min. Typ. Max.
Unit
°
µ
A
IR *
Reverse leakage current
Tj = 25 C
VR = 60V
4
Tj = 125°C
1.1
4
mA
V
°
VF *
Forward voltage drop
Tj = 25 C
IF = 1 A
IF = 1 A
0.67
0.57
0.8
°
Tj = 125 C
0.49
0.58
°
= 2 A
= 2 A
Tj = 25 C
IF
IF
°
0.65
Tj = 125 C
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.49 x IF(AV) + 0.08 x IF (RMS)
Fig. 1:
average forward current.
Fig. 2:
Average forward current versus ambient
Average forward power dissipation versus
δ
temperature ( =0.5).
IF(av)(A)
PF(av)(W)
1.2
0.7
δ = 0.2
δ = 0.5
δ = 0.1
Rth(j-a)=Rth(j-l)
0.6
1.0
0.8
0.6
δ = 0.05
SMA
Rth(j-a)=100°C/W
S(Cu)=1.5cm²
δ = 1
0.5
0.4
0.3
0.2
0.1
SMB
Rth(j-a)=80°C/W
S(Cu)=1.5cm²
0.4
T
T
0.2
Tamb(°C)
75
IF(av) (A)
0.6
tp
=tp/T
δ
tp
=tp/T
δ
0.0
0.0
0.0
0.2
0.4
0.8
1.0
1.2
0
25
50
100
125
150
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STPS160A/U
Fig. 3-1:
Fig. 3-2:
Non repetive surge peak forward current
versus overload duration (maximum values) (SMA).
Non repetive surge peak forward current
versus overload duration (maximum values) (SMB).
IM(A)
IM(A)
8
8
7
7
6
6
Ta=25°C
5
Ta=25°C
5
4
3
2
1
4
Ta=50°C
Ta=50°C
3
Ta=100°C
2
IM
IM
Ta=100°C
t
t
1
δ
=0.5
δ
=0.5
t(s)
t(s)
0
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 4-1:
Fig. 4-2:
Relative variation of thermal impedance
junction to ambient versus pulse duration (SMA).
Relative variation of thermal impedance
junction to ambient versus pulse duration (SMB).
Zth(j-a)/Rth(j-a)
Zth(j-a)/Rth(j-a)
1.0
0.9
1.0
0.9
Printed circuit board: S(Cu)=1.5cm² (e=35µm)
Printed circuit board: S(Cu)=1.5cm² (e=35µm)
0.8
0.7
0.8
0.7
0.6
0.6
δ=0.5
δ=0.5
0.5
0.5
0.4
0.3
0.4
0.3
δ=0.2
δ=0.2
T
T
0.2
0.2
δ=0.1
δ=0.1
0.1
0.0
0.1
0.0
tp(s)
1E+1
tp(s)
Single pulse
tp
tp
=tp/T
=tp/T
δ
δ
Single pulse
1E-2
1E-1
1E+0
1E+2
1E+3
1E-2
1E-1
1E+0
1E+1
1E+2
Fig. 5:
Fig. 6:
Junction capacitance versus reverse volt-
age applied (typical values)
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
C(pF)
1E+3
200
F=1MHz
Tj=25°C
Tj=100°C
100
50
1E+2
Tj=75°C
1E+1
1E+0
Tj=25°C
20
VR(V)
10
VR(V)
10
1E-1
1
2
5
20
50
100
0
5
10 15 20 25 30 35 40 45 50 55 60
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STPS160A/U
Fig. 7:
rent (maximum values).
Fig. 8-1:
Thermal resistance junction to ambient
Forward voltage drop versus forward cur-
versus copper surface under each lead (Epoxy
µ
printed circuit board, copper thickness: 35 m)(SMB).
IFM(A)
Rth(j-a) (°C/W)
1E+1
100
Tj=125°C
80
60
40
20
1E+0
Tj=25°C
1E-1
1E-2
S(Cu) (cm²)
VFM(V)
0.2 0.4 0.6 0.8
0
0
1
2
3
4
5
0
1
1.2
1.4 1.6
Fig. 8-2:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board, copper thickness: 35 m)(SMA).
µ
Rth(j-a) (°C/W)
140
120
100
80
60
40
20
S(Cu) (cm²)
0
0
1
2
3
4
5
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STPS160A/U
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
Millimeters Inches
REF.
E1
Min.
Max.
Min.
Max.
A1
A2
b
1.90
0.05
1.25
0.15
4.80
3.95
2.25
0.75
2.70
0.20
1.65
0.41
5.60
4.60
2.95
1.60
0.075
0.002
0.049
0.006
0.189
0.156
0.089
0.030
0.106
0.008
0.065
0.016
0.220
0.181
0.116
0.063
D
c
E
E
A1
E1
D
A2
C
L
L
b
FOOT PRINT DIMENSIONS
( in millimeters)
1.65
1.45
2.40
1.45
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STPS160A/U
PACKAGE MECHANICAL DATA
SMB
DIMENSIONS
Millimeters Inches
Min. Min.
E1
REF.
Max.
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
Max.
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
D
A1
A2
b
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
E
c
A1
E
E1
D
A2
C
L
b
L
FOOT PRINT DIMENSIONS
( in millimeters)
2.3
1.52
2.75
1.52
Ordering type
STPS160A
Marking
Package
SMA
Weight
0.068 g.
0.107 g.
Base qty
5000
Delivery mode
Tape & reel
GA6
E16
STPS160U
SMB
2500
Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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