STPS160H100 [ETC]

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER ; 高压功率肖特基整流器\n
STPS160H100
型号: STPS160H100
厂家: ETC    ETC
描述:

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
高压功率肖特基整流器\n

高压 高电压电源
文件: 总5页 (文件大小:117K)
中文:  中文翻译
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STPS160H100TV  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 80 A  
100 V  
K2  
K1  
A2  
A1  
Tj (max)  
VF (max)  
150 °C  
0.68 V  
FEATURES AND BENEFITS  
NEGLIGIBLE SWITCHING LOSSES  
HIGH JUNCTION TEMPERATURE CAPABILITY  
LOW LEAKAGE CURRENT  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
AVALANCHE RATED  
ISOTOPTM  
LOW INDUCTION PACKAGE  
INSULATED PACKAGE:  
Insulating Voltage = 2500 V(RMS)  
Capacitance = 45 pF  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
High voltage dual Schottky rectifier designed  
for high frequency telecom and computer  
Switched Mode Power Supplies and other  
power converters.  
Packaged in ISOTOP, this device is intended for  
use in medium voltage operation, and particu-  
larly, in high frequency circuitries where low  
switching losses and low noise are required.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
100  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
180  
A
IF(AV)  
Average forward current  
Tc = 110°C  
δ = 0.5  
Per diode  
Per device  
80  
160  
A
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms sinusoidal  
tp = 2 µs square F = 1kHz  
tp = 100 µs square  
1000  
2
A
A
10  
A
tp = 1µs Tj = 25°C  
78400  
W
-55 to+150 °C  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
150  
°C  
dV/dt  
10000  
V/µs  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 3A  
1/5  
STPS160H100TV  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
0.9  
Unit  
°C/W  
°C/W  
°C/W  
Rth (j-c) Junction to case  
Per leg  
Total  
0.5  
Rth (c)  
0.14  
Coupling  
When the diodes 1 and 2 are used simultaneously :  
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS (per diode)  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max.  
Unit  
IR *  
Reverse leakage Current Tj = 25°C  
Tj = 125°C  
VR = VRRM  
40  
µA  
mA  
V
13  
50  
VF**  
Forward Voltage drop  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
IF = 60 A  
IF = 60 A  
IF = 80 A  
IF = 80 A  
IF = 120 A  
IF = 120 A  
IF = 160 A  
IF = 160 A  
0.75  
0.63  
0.80  
0.68  
0.87  
0.74  
0.92  
0.80  
0.59  
0.63  
0.69  
0.75  
Pulse test : * tp = 5 ms, δ < 2%  
** tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation :  
2
P = 0.56 x IF(AV) + 0.0015 x IF (RMS)  
2/5  
STPS160H100TV  
Fig. 1: Average forward power dissipation versus  
average forward current (per diode).  
Fig. 2: Average forward current versus ambient  
temperature (δ=0.5, per diode).  
PF(av)(W)  
IF(av)(A)  
80  
100  
δ = 0.2  
δ = 0.5  
δ = 0.1  
70  
Rth(j-a)=Rth(j-c)  
δ = 0.05  
80  
60  
50  
δ = 1  
60  
40  
30  
Rth(j-a)=2°C/W  
40  
T
T
20  
20  
10  
tp  
Tamb(°C)  
=tp/T  
δ
IF(av) (A)  
tp  
=tp/T  
δ
0
0
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
Fig. 3: Normalized avalanche power derating  
versus pulse duration.  
Fig. 4: Normalized avalanche power derating  
versus junction temperature.  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
Fig. 5: Non repetitive surge peak forward current ver-  
sus overload duration (maximum values, per diode).  
Fig. 6: Relative variation of thermal impedance  
junction to case versus pulse duration (per diode).  
Zth(j-c)/Rth(j-c)  
IM(A)  
1.0  
600  
500  
400  
0.8  
δ = 0.5  
0.6  
Tc=50°C  
300  
0.4  
δ = 0.2  
200  
T
δ = 0.1  
IM  
Tc=90°C  
0.2  
Single pulse  
100  
t
t(s)  
δ=0.5  
tp  
tp(s)  
1E-1  
=tp/T  
δ
0
0.0  
1E-3  
1E-3  
1E-2  
1E-1  
1E+0  
1E-2  
1E+0  
5E+0  
3/5  
STPS160H100TV  
Fig. 7: Reverse leakage current versus reverse  
voltage applied (typical values, per diode).  
Fig. 8: Junction capacitance versus reverse volt-  
age applied (typical values, per diode) .  
IR(mA)  
C(nF)  
5E+1  
10.0  
F=1MHz  
Tj=25°C  
Tj=125°C  
1E+1  
1E+0  
1E-1  
1.0  
1E-2  
Tj=25°C  
VR(V)  
VR(V)  
1E-3  
0.1  
0
10 20 30 40 50 60 70 80 90 100  
1
2
5
10  
20  
50  
100  
Fig. 9: Forward voltage drop versus forward  
current (maximum values, per diode).  
IFM(A)  
500  
Tj=125°C  
100  
Tj=25°C  
10  
VFM(V)  
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
4/5  
STPS160H100TV  
PACKAGE MECHANICAL DATA  
ISOTOPTM  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
A
11.80  
12.20 0.465  
9.10 0.350  
8.20 0.307  
0.85 0.030  
2.05 0.077  
38.20 1.488  
31.70 1.240  
25.50 0.990  
24.15 0.939  
0.480  
0.358  
0.323  
0.033  
0.081  
1.504  
1.248  
1.004  
0.951  
A1 8.90  
B
C
7.8  
0.75  
C2 1.95  
37.80  
D1 31.50  
25.15  
D
E
E1 23.85  
E2  
24.80  
0.976  
G
14.90  
15.10 0.587  
12.80 0.496  
4.30 0.138  
4.30 0.161  
5.00 0.181  
4.30 0.157  
4.40 0.157  
30.30 1.185  
0.594  
0.504  
0.169  
0.169  
0.197  
0.69  
G1 12.60  
G2 3.50  
F
F1  
P
4.10  
4.60  
4.00  
P1 4.00  
0.173  
1.193  
S
30.10  
Cooling method: C  
Recommended torque value: 1.3 N.m.  
Maximum torque value: 1.5 N.m.  
Ordering type  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STPS160H100TV STPS160H100TV  
ISOTOP  
27g  
10  
Tube  
without screws  
Epoxy meets UL94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
5/5  

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