STPS160H100 [ETC]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER ; 高压功率肖特基整流器\n型号: | STPS160H100 |
厂家: | ETC |
描述: | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
|
文件: | 总5页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STPS160H100TV
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 80 A
100 V
K2
K1
A2
A1
Tj (max)
VF (max)
150 °C
0.68 V
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
ISOTOPTM
LOW INDUCTION PACKAGE
INSULATED PACKAGE:
Insulating Voltage = 2500 V(RMS)
Capacitance = 45 pF
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Repetitive peak reverse voltage
Value
100
Unit
V
VRRM
IF(RMS) RMS forward current
180
A
IF(AV)
Average forward current
Tc = 110°C
δ = 0.5
Per diode
Per device
80
160
A
IFSM
IRRM
IRSM
PARM
Tstg
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
tp = 10 ms sinusoidal
tp = 2 µs square F = 1kHz
tp = 100 µs square
1000
2
A
A
10
A
tp = 1µs Tj = 25°C
78400
W
-55 to+150 °C
Tj
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
150
°C
dV/dt
10000
V/µs
dPtot
1
* :
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
July 2003 - Ed: 3A
1/5
STPS160H100TV
THERMAL RESISTANCES
Symbol
Parameter
Value
0.9
Unit
°C/W
°C/W
°C/W
Rth (j-c) Junction to case
Per leg
Total
0.5
Rth (c)
0.14
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
IR *
Reverse leakage Current Tj = 25°C
Tj = 125°C
VR = VRRM
40
µA
mA
V
13
50
VF**
Forward Voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 60 A
IF = 60 A
IF = 80 A
IF = 80 A
IF = 120 A
IF = 120 A
IF = 160 A
IF = 160 A
0.75
0.63
0.80
0.68
0.87
0.74
0.92
0.80
0.59
0.63
0.69
0.75
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
2
P = 0.56 x IF(AV) + 0.0015 x IF (RMS)
2/5
STPS160H100TV
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
IF(av)(A)
80
100
δ = 0.2
δ = 0.5
δ = 0.1
70
Rth(j-a)=Rth(j-c)
δ = 0.05
80
60
50
δ = 1
60
40
30
Rth(j-a)=2°C/W
40
T
T
20
20
10
tp
Tamb(°C)
=tp/T
δ
IF(av) (A)
tp
=tp/T
δ
0
0
0
25
50
75
100
125
150
0
20
40
60
80
100
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0
0.01
T (°C)
j
t (µs)
p
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Fig. 5: Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode).
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
IM(A)
1.0
600
500
400
0.8
δ = 0.5
0.6
Tc=50°C
300
0.4
δ = 0.2
200
T
δ = 0.1
IM
Tc=90°C
0.2
Single pulse
100
t
t(s)
δ=0.5
tp
tp(s)
1E-1
=tp/T
δ
0
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E+0
5E+0
3/5
STPS160H100TV
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse volt-
age applied (typical values, per diode) .
IR(mA)
C(nF)
5E+1
10.0
F=1MHz
Tj=25°C
Tj=125°C
1E+1
1E+0
1E-1
1.0
1E-2
Tj=25°C
VR(V)
VR(V)
1E-3
0.1
0
10 20 30 40 50 60 70 80 90 100
1
2
5
10
20
50
100
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
500
Tj=125°C
100
Tj=25°C
10
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
4/5
STPS160H100TV
PACKAGE MECHANICAL DATA
ISOTOPTM
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
11.80
12.20 0.465
9.10 0.350
8.20 0.307
0.85 0.030
2.05 0.077
38.20 1.488
31.70 1.240
25.50 0.990
24.15 0.939
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
A1 8.90
B
C
7.8
0.75
C2 1.95
37.80
D1 31.50
25.15
D
E
E1 23.85
E2
24.80
0.976
G
14.90
15.10 0.587
12.80 0.496
4.30 0.138
4.30 0.161
5.00 0.181
4.30 0.157
4.40 0.157
30.30 1.185
0.594
0.504
0.169
0.169
0.197
0.69
G1 12.60
G2 3.50
F
F1
P
4.10
4.60
4.00
P1 4.00
0.173
1.193
S
30.10
Cooling method: C
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS160H100TV STPS160H100TV
ISOTOP
27g
10
Tube
without screws
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5
相关型号:
STPS160H100TV
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, SOT-227, 4 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明