STP08IE120F4 [STMICROELECTRONICS]
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm; 发射极开关双极晶体管ESBT 1200 V - 8A - 0.10欧姆
| 型号： | STP08IE120F4 |
| 厂家： | 
ST |
| 描述： | Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm |
| 文件： | 总11页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP08IE120F4
Emitter Switched Bipolar Transistor
ESBT 1200 V - 8 A - 0.10 Ω
Preliminary Data
General features
V
I
R
CS(ON)
CS(ON)
C
0.8 V
8 A
0.10
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ very fast-switch up to 150 kHz
■ Squared RBSOA up to 1200V
■ Very low C driven by R = 47Ω
TO220FP-4L
iss
G
■ Very low turn-off cross over time
Internal schematic diagrams
Applications
■ Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
Order codes
Part Number
Marking
Package
Packing
STP08IE120F4
P08IE120F4
TO220FP-4L
Tube
November 2006
Rev 1
1/11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
11
STP08IE120F4
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STP08IE120F4
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
Collector-source voltage (V = V = 0 V)
1200
30
V
V
CS(SS)
BS
GS
V
Base-source voltage (I = 0, V = 0 V)
C GS
BS(OS)
V
Source-base voltage (I = 0, V = 0 V)
17
V
SB(OS)
C
GS
V
Gate-source voltage
Collector current
V
± ±17
GS
I
8
A
C
I
Collector peak current (t < 5ms)
24
A
CM
P
I
Base current
6
12
A
B
I
Base peak current (t < 5ms)
A
BM
P
P
Total dissipation at T = 25°C
21
W
°C
°C
tot
c
T
Storage temperature
-40 to 150
150
stg
T
Max. operating junction temperature
J
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
R
Thermal resistance junction-case
__max
6
°C/W
thj-case
3/11
Electrical characteristics
STP08IE120F4
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
= 1200V
Min. Typ. Max. Unit
Collector-source current
I
V
100
10
µA
µA
CS(SS)
CE
(V = V = 0)
BS
GS
Base-source current
(I = 0, V = 0)
I
V
= 30V
= 17V
BS(OS)
BS(OS)
SB(OS)
C
GS
Source-base current
(I = 0, V = 0)
I
V
V
100
100
µA
SB(OS)
C
GS
I
Gate-source leakage
nA
= ± 17V
GS(OS)
GS
V
V
= 10V _I = 8A I = 1.6A
0.8
0.5
1
V
V
GS
GS
C
B
Collector-source ON
voltage
V
CS(ON)
= 10V_ I = 4A I = 0.4A
1.2
C
B
V
V
= 10V_ I = 8A
V
= 1V
= 1V
5
7
GS
GS
C
CS
CS
h
DC current gain
FE
= 10V_ I = 4A_
V
C
V
V
= 10V_ I = 8A I = 1.6A
C B
1.5
1.5
V
V
GS
GS
V
Base Source ON voltage
Gate threshold voltage
Input capacitance
BS(ON)
= 10V_ I = 4A_ I = 0.4A
C
B
4
V
V
V
= V ______I = 250µA
GS B
2
3
GS(th)
BS
V
V
= 25V ______f = 1MHz
= 0
CS
GS
550
26
pF
nC
C
ISS
V
= 10V
Gate-source charge
GS
Q
GS(tot)
I = 4A I = 0.8A V = 10V
C
B
GS
INDUCTIVE LOAD
Storage time
Fall time
t
670
15
ns
ns
s
V
= 960V R = 47Ω
G
Clamp
t
f
t = 4µs
p
I = 4A I = 0.4A V = 10V
C
B
GS
INDUCTIVE LOAD
Storage time
Fall time
t
340
ns
ns
s
V
= 960V RG = 47Ω
Clamp
t
10.2
f
t = 4µs
p
Maximum collector-
source voltage switched
without snubber
V
RG = 47Ω±±±±hFE = 5A I = 8A
1200
V
V
CSW
C
V
= V
= 400V V = 10V
CC
Clamp GS
Collector-source
dynamic voltage
V
R = 47Ω
I
= 4A I = 0.8A
5.75
3.35
CS(dyn)
CS(dyn)
G
C
B
(500ns)
I
= 4A
t
= 500ns
peak
Bpeak
V
= V
= 400V V = 10V
CC
Clamp GS
Collector-source
dynamic voltage
V
R = 47Ω
I
= 4A I = 0.8A
V
G
C
B
(1±µs)
I
= 4A
t
= 500ns
peak
Bpeak
4/11
STP08IE120F4
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Figure 3.
Figure 5.
Output characteristics
Figure 2.
DC current gain
Collector-source On voltage Figure 4.
Collector-source On voltage
Base-source On voltage
Figure 6.
Base-source On voltage
5/11
Electrical characteristics
Figure 7.
STP08IE120F4
Reverse biased safe operting Figure 8.
area
Gate threshold voltage vs
temperature
Figure 9.
Dynamic collector-emitter
saturation voltage
Figure 10. Inductive load switching time
Figure 11. Inductive load switching time
6/11
STP08IE120F4
Electrical characteristics
2.2
Test circuits
Figure 12. Inductive load switching and RBSOA test circuit
7/11
Package mechanical data
STP08IE120F4
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STP08IE120F4
Package mechanical data
TO220FP-4L MECHANICAL DATA
mm.
TYP
DIM.
MIN.
4.30
2.60
1.30
0.50
1.05
MAX.
4.70
3
1.70
0.70
A
A1
A2
b
b1
b2
b3
b4
c
D
E
e
e1
H1
L
L1
L2
Dia P
Q
1.50
0.50
1.3
1.25
1.50
0.60
15.90
10.20
2.79
0.45
15.50
9.80
2.29
2.54
7.62
6.30
6.70
13.60
3.30
15.40
3
3.30
15.80
3.40
3.50
7514291B
9/11
Revision history
STP08IE120F4
4
Revision history
Table 4.
Date
28-Nov-2006
Revision history
Revision
Changes
1
Initial release.
10/11
STP08IE120F4
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11/11
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