STP100NF04 [STMICROELECTRONICS]
N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET; N沟道40V - 0.0043ohm - 120A TO- 220 / D2PAK / I2PAK STripFET⑩ II功率MOSFET
| 型号： | STP100NF04 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET |
| 文件： | 总15页 (文件大小：586K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP100NF04
STB100NF04, STB100NF04-1
2
2
N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D PAK/I PAK
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP100NF04
STB100NF04
STB100NF04-1
40 V
40 V
40 V
< 0.0046 Ω 120 A 300 W
< 0.0046 Ω 120 A 300 W
<0.0046 Ω 120 A 300 W
■
■
■
TYPICAL R (on) = 0.0043 Ω
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
DS
3
2
1
2
TO-220
I PAK
3
1
DESCRIPTION
2
D PAK
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
SOLENOID AND RELAY DRIVERS
ORDERING INFORMATION
SALES TYPE
MARKING
P100NF04
B100NF04
PACKAGE
PACKAGING
TUBE
STP100NF04
STB100NF04T4
STB100NF04-1
TO-220
2
TAPE & REEL
D PAK
2
B100NF04
TUBE
I PAK
February 2002
1/15
STP100NF04, STB100NF04, STB100NF04-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
40
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
40
V
DGR
GS
V
Gate- source Voltage
± 20
120
120
480
300
2
V
GS
I
(#)
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
W
C
Derating Factor
W/°C
V/ns
J
dv/dt (1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
6
E
(2)
1.2
AS
T
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 175
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤120A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(2) Starting T = 25°C, I = 60A, V =30 V
j
d
DD
(#) Current Limited by Package
THERMAL DATA
2
2
TO-220 / I PAK / D PAK
Rthj-case
Rthj-pcb
Rthj-amb
Thermal Resistance Junction-case Max
0.5
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-pcb Max
See Curve on page 6
Thermal Resistance Junction-ambient (Free air) Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
T
l
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
40
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
= Max Rating
DS
1
10
µA
µA
DSS
Drain Current (V = 0)
V
= Max Rating, T = 125 °C
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 20V
±100
nA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
2
4
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 50 A
0.0043 0.0046
Ω
DS(on)
GS
D
2/15
STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Test Conditions
= 15 V I = 50 A
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
150
S
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V = 0
5100
1300
160
pF
pF
pF
iss
GS
C
oss
C
rss
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
= 20 V, I = 60 A
35
220
ns
ns
d(on)
DD
D
t
r
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
Q
Q
Q
V
V
= 32V, I = 120 A,
= 10V
110
35
35
150
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DD
D
nC
nC
nC
gs
gd
GS
(see, Figure 4)
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 20 V, I = 60 A
R = 4.7Ω V = 10 V
G GS
Min.
Min.
Typ.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
DD
80
50
ns
ns
d(off)
D
t
f
(Resistive Load see, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
120
480
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 120 A, V = 0
Forward On Voltage
1.3
V
SD
SD
GS
t
= 120 A, di/dt = 100A/µs
= 20V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
75
185
5
ns
nC
A
rr
SD
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/15
STP100NF04, STB100NF04, STB100NF04-1
Power Derating vs Tc
Max Id Current vs Tc
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/15
STP100NF04, STB100NF04, STB100NF04-1
Capacitance Variations
Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
NormalizedBreakdownvoltagevsTemperature
5/15
STP100NF04, STB100NF04, STB100NF04-1
Thermal Resistance Rthj-a vs PCB Copper Area
Max Power Dissipation vs PCB Copper Area
Safe Operating Area
Thermal Impedance
6/15
STP100NF04, STB100NF04, STB100NF04-1
Allowable Iav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
P
E
= 0.5 * (1.3 * BV
* I
)
AV
D(AVE)
AS(AR)
DSS
= P
* t
AV
D(AVE)
Where:
is the Allowable Current in Avalanche
I
AV
P
is the Average Power Dissipation in Avalanche (Single Pulse)
D(AVE)
t
is the Time in Avalanche
AV
To derate above 25 °C, at fixed I
the following equation must be applied:
AV,
I
AV
= 2 * (T
- T
) / (1.3 * BV
* Z )
DSS th
jmax
CASE
Where:
= K * R is the value coming from Normalized Thermal Response at fixed pulse width equal to T .
AV
Z
th
th
7/15
STP100NF04, STB100NF04, STB100NF04-1
SPICE THERMAL MODEL
Parameter
CTHERM1
CTHERM2
CTHERM3
CTHERM4
Node
5 - 4
4 - 3
3 - 2
2 - 1
Value
0.011
0.0012
0.05
0.1
RTHERM1
RTHERM2
RTHERM3
RTHERM4
5 - 4
4 - 3
3 - 2
2 - 1
0.09
0.02
0.11
0.17
8/15
STP100NF04, STB100NF04, STB100NF04-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3.1: Inductive Load Switching And Diode Re-
covery Times Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 4.1: Gate Charge test Waveform
9/15
STP100NF04, STB100NF04, STB100NF04-1
Fig. 5: Test Circuit For Diode Recovery Times
Fig. 5.1: Diode Recovery Times Waveform
10/15
STP100NF04, STB100NF04, STB100NF04-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
11/15
STP100NF04, STB100NF04, STB100NF04-1
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
12/15
1
STP100NF04, STB100NF04, STB100NF04-1
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
13/15
STP100NF04, STB100NF04, STB100NF04-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
14/15
STP100NF04, STB100NF04, STB100NF04-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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15/15
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