STH310N10F7-6 [STMICROELECTRONICS]
N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages;
| 型号： | STH310N10F7-6 |
| 厂家： | 
ST |
| 描述： | N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages |
| 文件： | 总19页 (文件大小：1102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
Power MOSFET in H2PAK-2 and H2PAK-6 packages
Datasheet
-
production data
Features
VDS
RDS(on) max.
ID
Order codes
TAB
TAB
STH310N10F7-2
STH310N10F7-6
100 V
2.3 mΩ
180 A
2
1
7
3
• Ultra low on-resistance
• 100% avalanche tested
1
2
2
H PAK-6
H PAK-2
Applications
• Switching applications
Description
Figure 1. Internal schematic diagram
These devices utilize the 7th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Table 1. Device summary
Order codes
STH310N10F7-2
STH310N10F7-6
Marking
Package
Packaging
H2PAK-2
H2PAK-6
310N10F7
Tape and reel
July 2013
DocID024040 Rev 2
1/19
This is information on a product in full production.
www.st.com
Contents
STH310N10F7-2, STH310N10F7-6
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VDS
Parameter
Drain-source voltage
Value
100
Unit
V
VGS
Gate-source voltage
± 20
180
V
(1)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
A
ID
(1)
120
720
A
A
ID
(2)
IDM
PTOT
Total dissipation at TC = 25°C
Derating factor
315
2.1
W
W/°C
Single pulse avalanche energy
(TJ = 25 °C, L=0.55 mH, Ias=65 A )
(3)
1
J
EAS
Tj
Operating junction temperature
storage temperature
- 55 to 175
°C
Tstg
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting T =25°C, I =60 A, V =50 V
J
D
DD
Table 3.
Symbol
Thermal data
Parameter
Value
0.48
35
Unit
°C/W
°C/W
Rthj-case
Thermal resistance junction-case
Thermal resistance junction-pcb max
(1)
Rthj-pcb
1. When mounted on 1 inch² FR-4 board, 2oz Cu
DocID024040 Rev 2
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19
Electrical characteristics
STH310N10F7-2, STH310N10F7-6
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. On/off states
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage (VGS= 0)
V(BR)DSS
ID = 250 μA
100
V
VDS= 100 V
DS= 100 V, TC= 125°C
1
μA
μA
Zero gate voltage drain
current (VGS = 0)
IDSS
V
100
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20 V
100
4.5
2.3
nA
V
VGS(th)
RDS(on)
Gate threshold voltage
VDS= VGS, ID = 250 μA
2.5
3.5
1.9
Static drain-source on-
resistance
V
GS= 10 V, ID= 60 A
mΩ
Table 5. Dynamic
Test conditions
Symbol
Ciss
Parameter
Input capacitance
Output capacitance
Min.
Typ.
12800
3500
Max.
Unit
pF
-
-
-
-
VDS = 25 V, f = 1 MHz,
Coss
pF
V
GS = 0
Reverse transfer
capacitance
Crss
-
170
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
-
-
-
180
78
-
-
-
nC
nC
nC
VDD = 50 V, ID = 180 A,
VGS = 10 V
(see Figure 14)
34
Table 6. Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Rise time
Min.
Typ.
62
Max.
Unit
ns
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
V
DD = 50 V, ID = 90 A
108
148
40
ns
RG = 4.7 Ω VGS = 10 V
(see Figure 13,
Figure 18)
Turn-off delay time
Fall time
ns
ns
4/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
180
A
Source-drain current
(pulsed)
(1)
-
720
1.5
A
ISDM
(2)
Forward on voltage
ISD=60 A, VGS=0
-
-
-
-
V
ns
nC
A
VSD
trr
Reverse recovery time
85
200
4.7
ISD=180 A,
di/dt = 100 A/μs,
VDD=80 V, Tj=150°C
Qrr
Reverse recovery charge
IRRM
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulse duration = 300μs, duty cycle 1.5%
DocID024040 Rev 2
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19
Electrical characteristics
STH310N10F7-2, STH310N10F7-6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15430v1
280tok
I
D
(A)
K
10-1
10-2
δ=0.5
100
0.2
0.1
0.05
10
1
100µs
0.02
Zth=k Rthj-c
Tj=175°C
Tc=25°C
δ=tp/τ
1ms
0.01
Sinlge
pulse
10ms
Single pulse
10-4
tp
τ
0.1
10-2
10-5
10-3
10-1
10
V
DS(V)
p(s)
t
0.1
1
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM14734v1
AM14735v1
ID
(A)
ID
VGS=10V
8V
(A)
V
DS = 2V
350
300
250
200
150
100
7V
300
250
200
150
100
50
6V
50
0
5V
0
2
8
VDS(V)
1
2
3
5
8
VGS(V)
0
4
6
0
4
6
7
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
AM14736v1
AM15431v1
VGS
(V)
R
DS(on)
(mΩ)
VDD=50V
ID=180A
V
GS=10V
2.25
2.20
2.15
10
8
6
4
2.10
2.05
2
2
0
80
120
160
40
50
100
150
Qg(nC)
ID
(A)
0
0
6/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
Figure 8. Normalized BVDSS vs temperature
Figure 9. Capacitance variations
AM14742v1
AM14738v1
BVDSS
(norm)
C
(pF)
I
D = 1mA
14000
1.04
1.02
1.00
Ciss
12000
10000
8000
6000
0.98
4000
2000
0.96
0.94
Crss
Coss
0
-75
-25
0
25
75
125
0
60
TJ
(°C)
20
80
VDS(V)
100
40
Figure 10. Source-drain diode forward
characteristics
Figure 11. Normalized gate threshold voltage vs
temperature
AM14739v1
AM14741v1
VSD
VGS(th)
(V)
(norm)
1.05
ID = 250µA
1.0
TJ=-50°C
0.95
0.85
0.75
0.90
0.80
TJ=25°C
0.65
0.55
0.45
0.70
0.60
TJ=150°C
0
-75
-25
0
25
75
125
80
160
ISD(A)
TJ(°C)
40
120
Figure 12. Normalized on-resistance vs
temperature
AM14740v1
RDS(on)
(norm)
2.0
ID = 60A
1.6
1.2
0.8
0.4
-75
-25
0
25
75
125
TJ(°C)
DocID024040 Rev 2
7/19
19
Test circuits
STH310N10F7-2, STH310N10F7-6
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
VDD
μF
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VGS
VDS
ID
0
0
VDD
VDD
90%
10%
AM01472v1
AM01473v1
8/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID024040 Rev 2
9/19
19
Package mechanical data
STH310N10F7-2, STH310N10F7-6
Table 8. H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
e
E
F
H
H1
L
-
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
10/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Package mechanical data
Figure 19. H²PAK-2 drawing
8159712_C
DocID024040 Rev 2
11/19
19
Package mechanical data
STH310N10F7-2, STH310N10F7-6
Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)
8159712_C
12/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Package mechanical data
Table 9. H²PAK-6 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
2.34
4.88
7.42
0.45
0.50
10.00
7.40
14.75
1.27
4.35
6.85
1.5
4.80
0.20
1.37
2.74
5.28
7.82
0.60
0.70
10.40
7.80
15.25
1.40
4.95
7.25
1.75
2.50
0.60
8°
e
e1
e2
E
F
H
-
H1
L
L1
L2
L3
L4
M
R
1.90
0.20
0°
V
DocID024040 Rev 2
13/19
19
Package mechanical data
STH310N10F7-2, STH310N10F7-6
Figure 21. H²PAK-6 drawing
8159693_Rev_E
14/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Package mechanical data
Figure 22. H²PAK-6 recommended footprint (dimensions are in mm)
footprint_Rev_E
DocID024040 Rev 2
15/19
19
Packaging mechanical data
STH310N10F7-2, STH310N10F7-6
5
Packaging mechanical data
Table 10. Tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
16/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
Packaging mechanical data
Figure 23. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 24. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID024040 Rev 2
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19
Revision history
STH310N10F7-2, STH310N10F7-6
6
Revision history
Table 11. Document revision history
Date
Revision
Changes
Initial release. Part number(s) previously included in datasheet
ID 022287
10-Dec-2012
1
– Modified: IDSS and VGS(th) values on Table 4.
– Added: EAS value in Table 2
23-Jul-2013
2
– Document status promoted from preliminary data to
production data
– Minor text changes
18/19
DocID024040 Rev 2
STH310N10F7-2, STH310N10F7-6
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