STH315N10F7-2 [STMICROELECTRONICS]
High avalanche ruggedness;
| 型号： | STH315N10F7-2 |
| 厂家： | 
ST |
| 描述： | High avalanche ruggedness |
| 文件： | 总19页 (文件大小：1146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH315N10F7-2,
STH315N10F7-6
Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A
STripFET™ F7 Power MOSFETs
Datasheet
-
production data
Features
VDS
RDS(on) max.
ID
Order codes
TAB
TAB
STH315N10F7-2
STH315N10F7-6
100 V
2.3 mΩ
180 A
2
1
7
3
• Designed for automotive applications and
1
AEC-Q101 qualified
H2PAK-6
H2PAK-2
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications
Figure 1. Internal schematic diagram
• Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1. Device summary
Order codes
STH315N10F7-2
STH315N10F7-6
Marking
Package
Packaging
H2PAK-2
H2PAK-6
315N10F7
Tape and reel
September 2014
DocID025090 Rev 4
1/19
This is information on a product in full production.
www.st.com
Contents
STH315N10F7-2, STH315N10F7-6
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
4.1
4.2
H PAK-2, STH315N10F7-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2
H PAK-6, STH315N10F7-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
6
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VDS
Parameter
Drain-source voltage
Value
100
Unit
V
VGS
Gate-source voltage
± 20
180
V
(1)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
A
ID
(1)
120
720
A
A
ID
(2)
IDM
PTOT
Total dissipation at TC = 25°C
Derating factor
315
2.1
W
W/°C
Single pulse avalanche energy
(TJ = 25 °C, L=0.55 mH, Ias= 65 A)
(3)
1
J
EAS
Tj
Operating junction temperature
storage temperature
- 55 to 175
°C
Tstg
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting T =25°C, I =60 A, V =50 V
J
D
DD
Table 3. Thermal data
Symbol
Parameter
Value
0.48
35
Unit
°C/W
°C/W
Rthj-case
Thermal resistance junction-case
(1)
Thermal resistance junction-pcb max
Rthj-pcb
1. When mounted on 1 inch² FR-4 board, 2oz Cu
DocID025090 Rev 4
3/19
19
Electrical characteristics
STH315N10F7-2, STH315N10F7-6
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V(BR)DSS
VGS= 0, ID = 250 µA
100
V
V
V
GS = 0, VDS= 100 V
GS = 0, VDS= 100 V,
1
µA
µA
Zero gate voltage drain
current
IDSS
100
TC= 125°C
IGSS
Gate body leakage current VDS = 0, VGS = 20 V
100
4.5
nA
V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 60 A
2.5
3.5
2.1
Static drain-source
on- resistance
RDS(on)
2.3
mΩ
Table 5. Dynamic
Test conditions
Symbol
Ciss
Parameter
Input capacitance
Output capacitance
Min.
Typ.
12800
3500
Max.
Unit
pF
-
-
-
-
Coss
VGS = 0, VDS = 25 V,
f = 1 MHz
pF
Reverse transfer
capacitance
Crss
-
170
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
-
-
-
180
78
-
-
-
nC
nC
nC
VDD = 50 V, ID = 180 A,
VGS = 10 V
(see Figure 14)
34
Table 6. Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Rise time
Min.
Typ.
62
Max.
Unit
ns
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
V
DD = 50 V, ID = 90 A
G = 4.7 Ω VGS = 10 V
108
148
40
ns
R
(see Figure 13,
Figure 18)
Turn-off delay time
Fall time
ns
ns
4/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Electrical characteristics
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
180
A
Source-drain current
(pulsed)
(1)
-
720
1.5
A
ISDM
(2)
Forward on voltage
ISD=60 A, VGS=0
-
-
-
-
V
ns
nC
A
VSD
trr
Reverse recovery time
85
200
4.7
ISD=180 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150°C
Qrr
Reverse recovery charge
IRRM
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulse duration = 300µs, duty cycle 1.5%
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19
Electrical characteristics
STH315N10F7-2, STH315N10F7-6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15430v1
280tok
I
D
(A)
K
10-1
10-2
δ=0.5
100
0.2
0.1
0.05
10
1
100µs
0.02
Zth=k Rthj-c
Tj=175°C
Tc=25°C
δ=tp/τ
1ms
0.01
Sinlge
pulse
10ms
Single pulse
10-4
tp
τ
0.1
10-2
10-5
10-3
10-1
10
V
DS(V)
p(s)
t
0.1
1
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM14734v1
AM14735v1
ID
(A)
ID
VGS=10V
8V
(A)
V
DS = 2V
350
300
250
200
150
100
7V
300
250
200
150
100
50
6V
50
0
5V
0
2
8
VDS(V)
1
2
3
5
8
VGS(V)
0
4
6
0
4
6
7
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
AM14736v1
AM15431v1
VGS
(V)
R
DS(on)
(mΩ)
VDD=50V
ID=180A
V
GS=10V
2.25
2.20
2.15
10
8
6
4
2.10
2.05
2
2
0
80
120
160
40
50
100
150
Qg(nC)
ID
(A)
0
0
6/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Electrical characteristics
Figure 8. Normalized V(BR)DSS vs temperature
Figure 9. Capacitance variations
AM14742v1
AM14738v1
V(BR)DSS
C
(norm)
(pF)
ID = 1mA
14000
1.04
1.02
1.00
Ciss
12000
10000
8000
6000
0.98
4000
2000
0.96
0.94
Crss
Coss
0
-75
-25
0
25
75
125
0
60
TJ(°C)
20
80
VDS(V)
100
40
Figure 10. Source-drain diode forward
characteristics
Figure 11. Normalized gate threshold voltage vs
temperature
AM14739v1
AM14741v1
VSD
VGS(th)
(V)
(norm)
1.05
ID = 250µA
1.0
TJ=-50°C
0.95
0.85
0.75
0.90
0.80
TJ=25°C
0.65
0.55
0.45
0.70
0.60
TJ=150°C
0
-75
-25
0
25
75
125
80
160
ISD(A)
TJ(°C)
40
120
Figure 12. Normalized on-resistance vs
temperature
AM14740v1
RDS(on)
(norm)
2.0
ID = 60A
1.6
1.2
0.8
0.4
-75
-25
0
25
75
125
TJ(°C)
DocID025090 Rev 4
7/19
19
Test circuits
STH315N10F7-2, STH315N10F7-6
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
μF
3.3
μF
RL
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VGS
VDS
ID
0
0
VDD
VDD
90%
10%
AM01472v1
AM01473v1
8/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID025090 Rev 4
9/19
19
Package mechanical data
STH315N10F7-2, STH315N10F7-6
4.1
H2PAK-2, STH315N10F7-2
Figure 19. H²PAK-2 drawing
8159712_C
10/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Package mechanical data
Table 8. H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
e
E
F
H
H1
L
-
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
DocID025090 Rev 4
11/19
19
Package mechanical data
STH315N10F7-2, STH315N10F7-6
Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)
8159712_C
12/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Package mechanical data
4.2
H2PAK-6, STH315N10F7-6
Figure 21. H²PAK-6 drawing
8159693_Rev_F
DocID025090 Rev 4
13/19
19
Package mechanical data
STH315N10F7-2, STH315N10F7-6
Table 9. H²PAK-6 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
2.34
4.88
7.42
0.45
0.50
10.00
7.40
14.75
1.27
4.35
6.85
1.5
4.80
0.20
1.37
2.74
5.28
7.82
0.60
0.70
10.40
7.80
15.25
1.40
4.95
7.25
1.75
2.50
0.60
8°
e
e1
e2
E
F
H
-
H1
L
L1
L2
L3
L4
M
R
1.90
0.20
0°
V
14/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Package mechanical data
Figure 22. H²PAK-6 recommended footprint (dimensions are in mm)
footprint_Rev_F
DocID025090 Rev 4
15/19
19
Packaging mechanical data
STH315N10F7-2, STH315N10F7-6
5
Packaging mechanical data
Figure 23. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
16/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
Packaging mechanical data
Table 10. Tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
Figure 24. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID025090 Rev 4
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19
Revision history
STH315N10F7-2, STH315N10F7-6
6
Revision history
Table 11. Document revision history
Date
Revision
Changes
02-Aug-2013
1
Initial release.
– Modified: Table 1, RDS(on) typical value in Table 4
03-Sep-2013
2
– Minor text changes
– Modified: title and Features in cover page
– Updated: Section 4: Package mechanical data
– Minor text changes
27-May-2014
12-Sep-2014
3
4
– Modified: title, features and description in cover page.
18/19
DocID025090 Rev 4
STH315N10F7-2, STH315N10F7-6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2014 STMicroelectronics – All rights reserved
DocID025090 Rev 4
19/19
19
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