ST901T [STMICROELECTRONICS]
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON; 高压点火线圈驱动器NPN大功率达林顿管
| 型号： | ST901T |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST901T
HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER DARLINGTON
■
HIGH VOLTAGE SPECIAL DARLINGTON
STRUCTURE
■
■
VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATING JUNCTION
TEMPERATURE
■
HIGH DC CURRENT GAIN
APPLICATION
■
HIGH RUGGEDNESS ELECTRONIC
IGNITION FOR SMALL ENGINES
3
2
1
DESCRIPTION
TO-220
The ST901T is a high voltage NPN silicon
transistor in monolithic special Darlington
configuration mounted in Jedec TO-220 plastic
package, designed for applications such as
electronic ignition for small engines (scooters,
lawnmowers, chainsaws).
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector- Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
500
V
V
350
5
V
4
A
ICM
Collector Peak Current
Base Current
8
0.5
A
IB
A
IBM
Base Peak Current
2.5
A
o
Ptot
Total Dissipation at Tc ≤ 25 C
30
W
oC
oC
Tstg
Tj
Storage Temperature
-65 to 175
175
Max. Operating Junction Temperature
1/4
June 1997
ST901T
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 500 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (IE = 0)
100
0.5
µA
mA
o
VCE = 500 V
Tcase = 125 C
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
VCE = 350 V
VCE = 350 V
100
0.5
µA
mA
o
Tcase = 125 C
Emitter Cut-off Current VEB = 5 V
(IC = 0)
10
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 10 mA
L = 10 mH
IB = 0
350
V
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = 2 A
IB = 20 mA
1.3
1.8
V
Base-Emitter
Saturation Voltage
IC = 2 A
IB = 20 mA
V
DC Current Gain
Functional Test
IC = 2 A
IC = 4 A
VCE =2 V
VCE =2 V
1500
500
VCC = 24 V
L = 4 mH
Vclamp = 350 V
4
A
INDUCTIVE LOAD
Storage Time
Fall Time
VCC = 12 V
L = 4 mH
IC = 2 A
Vclamp = 250 V
IB = 20 mA
ts
tf
15
1.5
µs
µs
VBE = -3 V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
ST901T
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
A
C
0.181
0.051
0.107
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
3/4
ST901T
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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