ST901T_05 [STMICROELECTRONICS]
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR; 高压点火线圈驱动器NPN功率晶体管
| 型号： | ST901T_05 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST901T
HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER TRANSISTOR
n
HIGH VOLTAGE SPECIAL DARLINGTON
STRUCTURE
Figure 1: Package
n
n
VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATION JUNCTION
TEMPERATURE
n
HIGH DC CURRENT GAIN
3
2
1
APPLICATIONS
TO-220
n
HIGH RUGGEDNESS ELECTRONIC
IGNITION FOR SMALL ENGINES
Figure 2: Internal Schematic Diagram
DESCRIPTION
The ST901T is a High Voltage NPN silicon
transistor in monolithic special Darlington
configuration mounted in Jedec TO-220 plastic
package, designed for applications such us
electronic ignition for small engines (scooters,
lawnmovers, chainsaws).
Table 1: Order Codes
Part Number
Marking
Package
Packaging
ST901T
901T
TO-220
TUBE
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Collector-Emitter Voltage (V = 0)
500
350
V
V
CES
BE
V
Collector-Emitter Voltage (I = 0)
CEO
B
V
Emitter-Base Voltage (I = 0)
5
V
EBO
C
I
Collector Current
Collector Peak Current (t < 5ms)
4
8
A
A
C
I
CM
p
I
Base Current
0.5
A
B
I
Base Peak Current (t < 5ms)
2.5
A
BM
p
o
P
100
W
°C
°C
Total Dissipation at T = 25 C
tot
C
T
T
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
150
stg
J
Rev. 2
January 2005
1/5
ST901T
Table 3: Thermal Data
o
R
Thermal Resistance Junction-Case
Max
1.25
thj-case
C/W
o
Table 4: Electrical Characteristics (T
= 25 C unless otherwise specified)
case
Symbol
Parameter
Collector Cut-off Current V = 500 V
Test Conditions
Min.
Typ.
Max.
100
Unit
mA
I
CES
CE
(I = 0)
500
mA
o
E
V
= 500 V
T
T
= 125 C
CE
case
case
I
Collector Cut-off Current V = 350 V
100
500
mA
mA
CEO
CE
(I = 0)
o
B
V
V
= 350 V
= 5 V
= 125 C
CE
EB
I
Emitter Cut-off Current
10
mA
EBO
(I = 0)
C
V
* Collector-Emitter
I
= 10 mA
L = 10 mH
350
V
CEO(sus)
C
Sustaining Voltage
(I = 0 )
B
V
*
Collector-Emitter
I
= 2 A
I = 20 mA
2
V
V
CE(sat)
C
B
Saturation Voltage
V
*
Base-Emitter Saturation I = 2 A
I = 20 mA
1.8
BE(sat)
C
B
Voltage
h
DC Current Gain
I
I
= 2 A
= 4 A
V
V
= 2 V
= 2 V
1500
500
FE
C
CE
C
CE
Functional Test
V
= 24 V
V
= 350 V
4
CC
clamp
L = 4 mH
= 12 V
INDUCTIVE LOAD
Storage Time
Fall Time
V
V
clamp
= 250 V
CC
t
15
1.5
ms
ms
s
L = 4 mH
I = 2 A
C
I = 20 mA
V
= -3 V
t
B
BE
f
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
2/5
ST901T
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
A
b
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
3/5
ST901T
Figure 5: Revision History
Version
Release Date
Change Designator
14-Oct-2004
15-Jan-2005
1
2
First Release.
DC current gain range has been modified.
4/5
ST901T
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2005 STMicroelectronics - All Rights Reserved
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5/5
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