SM4T6V220 [STMICROELECTRONICS]
TRANSIL; TRANSIL型号: | SM4T6V220 |
厂家: | ST |
描述: | TRANSIL |
文件: | 总7页 (文件大小:128K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM4T6V8,A/220,A
SM4T6V8C,CA/220C,CA
TRANSIL
FEATURES
.
.
PEAK PULSE POWER= 400 W @ 1ms.
BREAKDOWN VOLTAGE RANGE :
From 6V8 to 220 V.
UNI AND BIDIRECTIONAL TYPES.
LOW CLAMPING FACTOR.
FAST RESPONSE TIME:
.
.
.
T
: 1ps (0 V to V ).
clamping
JEDEC REGISTRED.
BR
.
SOD 6
(Plastic)
DESCRIPTION
MECHANICAL CHARACTERISTICS
Transil diodes provide high overvoltage
.
.
Body marked with : Logo, Date Code, Type
Code and Cathode Band (for unidirectional
types only).
Full compatibility with both gluing and paste
soldering technologies.
Excellent on board stability.
Tinned copper leads.
High temperature resistant resin.
protection
by
clamping
action.
Their
instantaneous reponse to transients makes them
praticularly suited to protect voltage sensitive
devices such as MOS Technology and low
voltage supplied IC’s.
.
.
.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
P
p
Peak pulse power dissipation
See note 1 and derating curve Fig 1.
Tamb = 25°C
400
W
P
Power dissipation on infinite heatsink
See note 1 and derating curve Fig 1.
Tlead = 50°C
5
W
A
I
Non repetitive surge peak forward current.
For unidirectional types.
Tamb = 25°C
t =10 ms
50
FSM
T
T
Storage and junction temperature range
- 65 to + 175
150
°C
°C
stg
j
T
L
Maximum lead temperature for soldering
during 10 s.
260
°C
1/7
November 1992
SM4Txx
THERMAL RESISTANCES
Symbol
Parameter
Value
20
Unit
°C/W
°C/W
R
th
(j-l)
Junction-leads on infinite heatsink
R
th
(j-a)
Junction to ambiant. on printed circuit.
With standard footprint dimensions.
100
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Stand-off voltage.
I
I
F
V
RM
V
BR
Breakdown voltage.
V
V
BR
CL
V
I
Clamping voltage.
CL
V
V
F
RM
Leakage current @ VRM.
Surge current.
V
RM
I
RM
I
PP
Voltage temperature coefficient.
αT
V
F
Forward Voltage drop
I
PP
V
< 3.5V @ I = 25 A.
F
F
I
@ V
V
@
I
V
@ I
V
@ I
PP
αT
C
RM
RM
BR
R
CL
max
10/1000µs
PP CL
TYPES
max
min nom max
note2
max
max
typ
8/20µs
note3 note4
-4
10 /°C ( F)
P
Uni
directional
Bi
directional
QD SM4T6V8C VD
µA
V
V
V
V
mA
V
A
V
A
*
*
SM4T6V8
1000 5.8 6.45 6.8 7.48
1000 5.8 6.45 6.8 7.14
500 6.4 7.13 7.5 8.25
500 6.4 7.13 7.5 7.88
10 8.55 9.5 10 11
10 8.55 9.5 10 10.5
10 10.5 38 13.4 174
10 10.5 38 13.4 174
10 11.3 35.4 14.5 160
10 11.3 35.4 14.5 160
5.7
5.7
6.1
6.1
7.3
7.3
7.8
7.8
8.4
8.4
8.8
8.8
9.2
9.2
9.4
9.4
9.6
9.6
9.7
9.7
9.8
9.8
9.9
9.9
10.0
10.0
3500
3500
3100
3100
2000
2000
1550
1550
1200
1200
975
975
800
800
725
725
625
625
575
SM4T6V8A QE SM4T6V8CA VE
SM4T7V5 QF SM4T7V5C VF
SM4T7V5A QG SM4T7V5CA VG
QN SM4T10C
VN
QP SM4T10CA VP
QS SM4T12C
VS
QT SM4T12CA VT
QW SM4T15C
VW
QX SM4T15CA VX
RD SM4T18C
UD
RE SM4T18CA UE
RH SM4T22C
UH
RK SM4T22CA UK
RL SM4T24C
UL
RM SM4T24CA UM
RN SM4T27C
UN
RP SM4T27CA UP
RQ SM4T30C
UQ
RR SM4T30C4 UR
RS SM4T33C
US
RT SM4T33CA UT
RU SM4T36C
UU
RV SM4T36CA UV
SM4T10
SM4T10A
SM4T12
SM4T12A
SM4T15
SM4T15A
SM4T18
SM4T18A
SM4T22
SM4T22A
SM4T24
SM4T24A
SM4T27
SM4T27A
SM4T30
SM4T30A
SM4T33
SM4T33A
SM4T36
SM4T36A
SM4T39
SM4T39
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
14.5 27.6 18.6 124
14.5 27.6 18.6 124
16.7 24 21.7 106
16.7 24 21.7 106
21.2 19 27.2 85
21.2 19 27.2 85
25.2 16 32.5 71
25.2 16 32.5 71
30.6 13 39.3 59
30.6 13 39.3 59
33.2 12 42.8 54
33.2 12 42.8 54
37.5 10.7 48.3 48
37.5 10.7 48.3 48
41.5 9.6 53.5 43
41.5 9.6 53.5 43
45.7 8.8 59.0 39
45.7 8.8 59.0 39
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
10.2 11.4 12 13.2
10.2 11.4 12 12.6
12.8 14.3 15 16.5
12.8 14.3 15 15.8
15.3 17.1 18 19.8
15.3 17.1 18 18.9
18.8 20.9 22 24.2
18.8 20.9 22 23.1
20.5 22.8 24 26.4
20.5 22.8 24 25.2
23.1 25.7 27 29.7
23.1 25.7 27 28.4
25.6 28.5 30 33
25.6 28.5 30 31.5
28.2 31.4 33 36.3
28.2 31.4 33 34.7
30.8 34.2 36 39.6
30.8 34.2 36 37.8
33.3 37.1 39 42.9
33.3 37.1 39 41.0
575
510
510
480
480
450
450
49.9
49.9
8
8
64.3 36
64.3 36
RW SM4T39C
RX SM4T39
UW
UX
53.9 7.4 69.7 33
53.9 7.4 69.7 33
2/7
142
SM4Txx
TYPES
I
@ V
V
@
I
V
@ I
V
@ I
PP
αT
max
C
RM
RM
BR
R
CL
max
10/1000µs
PP CL
max
min nom max
note2
max
typ
8/20µs
note3 note4
-4
10 /°C ( F)
P
Uni
directional
Bi
directional
SN SM4T68C
µA
V
V
V
V
mA
V
A
V
A
*
*
SM4T68
WN
5
5
5
5
5
5
5
5
5
5
58.1 64.6 68 74.8
58.1 64.6 68 71.4
85.5 95.0 100 110
85.5 95.0 100 105
128 143 150 165
128 143 150 158
171 190 200 220
171 190 200 210
188 209 220 242
188 209 220 231
1
1
1
1
1
1
1
1
1
1
92
92
4.3 121
4.3 121
19
19
13
13
9
10.4
10.4
10.6
10.6
10.8
10.8
10.8
10.8
10.8
10.8
270
270
200
200
145
145
120
120
110
110
SM4T68A SP SM4T68CA WP
SM4T100 SW SM4T100C WW
SM4T100A SX SM4T100CA WX
SM4T150 TH SM4T150C XH
SM4T150A TK SM4T150CA XK
SM4T200 TS SM4T200C XS
SM4T200A TT SM4T200CA XT
SM4T220 TU SM4T220C XU
SM4T220A TV SM4T220CA XV
137 2.9 178
137 2.9 178
207 2.0 265
207 2.0 265
274 1.5 353 6.5
274 1.5 353 6.5
9
328 1.4 388
328 1.4 388
6
6
All parameters tested at 25 °C, except where indicated.
* = Marking
Figure 1: Power dissipation derating versus
ambient temperature
% I
PP
100 %
10
s
100
50
0
Peak Power
(on printed circuit).
80 %
PULSE WAVEFORM 10/1000
s
60 %
40 %
Average Power
(on infinite heatsink).
t
20 %
0%
1000
s
Tamb (˚c)
0
20
40 60 80 100 120 140 160 180 200
Note 1 :
For surges greater than the maximum values,
the diode will present a short-circuit Anode - Cathode.
Note 2 :
Note 3 :
Note 4 :
Pulse test: TP < 50 ms.
∆VBR = αT * (Ta - 25) * VBR(25°C)
.
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
3/7
143
SM4Txx
Figure 2 : Peak pulse power versus exponential pulse duration.
Pp (W)
100000
10000
1000
100
Tj initial = 25˚C
tp (mS ) EXPO.
10
10
0.001
0.01
0.1
1
100
Figure 3 : Clamping voltage versus peak pulse current.
exponential waveform t = 20 µs ________
t = 1 ms ——————-
t =10 ms ...............
V
(V)
CL
1000
% Ipp
100
Tj initial = 25˚C
SM4T 220A
SM4T 150A
50
0
t
t
t
r
t
< 10
s
r
100
SM4T 68A
SM4T 39A
SM4T 22A
SM4T 10A
10
SM4T 6V8A
Ipp (A)
1
0.1
1
10
100
1000
Note : The curves of the figure 3 are specified for a junction temperature of 25 °C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆V
= αT
[T -25]
a
V
.
(BR)
(BR)
(V(BR)) *
*
For intermediate voltages, extrapolate the given results.
4/7
SM4Txx
Figure 4a : Capacitance versus reverse applied
Figure 4b : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
voltage for bidirectional types (typical values)
C (pF)
10000
C (pF)
10000
Tj = 25˚C
f = 1 MHz
Tj = 25˚C
f = 1 MHz
SM
4
T
6
V8
A
S
M
4
T
6
V
1
8
C
A
SM
SM
4
T 1
T 3
5
1000
100
10
1000
100
10
A
S
M
4
T
5
C
A
4
0
A
A
S
S
M
M
4
4
T
T
3
6
0
8
C
C
A
A
SM
4
T 6
8
SM
4
T 2
2
0
A
S
M
4
T
2
2
0
C
A
V
(V)
V
(V)
R
R
1
10
100
1
10
100
Figure 6 : Transient thermal impedance
junction-ambient versus pulse duration. For a
mounting on PC Board with standard footprint
dimensions.
Figure 5 : Peak forward voltage drop versus
peak forward current (typical values for
unidirectional types).
ZTH j-a ( ˚C/W )
100
10
1
0.01
0.1
1
10
100
1000
5/7
SM4Txx
ORDER CODE
SM 4 T 100 C A
TOLERANCE :
A= +/- 5%
= +/- 10%
SURFACE MOUNT
400 WATT
BIDIRECTIONAL
BREAKDOWN VOLTAGE
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
PACKAGE MECHANICAL DATA
SOD 6 (Plastic).
Ref
Millimeters
Inches
E
min
max
2.61
0.20
2.11
3.93
5.59
4.30
1.27
min
max
A
a1
B
2.48
0.10
1.96
3.65
5.39
4.15
1.00
0.096
0.004
0.077
0.143
0.212
0.163
0.039
0.103
0.008
0.083
0.155
0.220
0.170
0.050
B
A
C
C
D
E
F
F
Weight = 0.12 g.
a
1
D
FOOTPRINT DIMENSIONS (Millimeter).
SOD 6 Plastic.
Ref
Millimeters
a
b
c
2.75
1.52
2.30
b
a
b
c
Packaging : standard packaging is in film.
6/7
SM4Txx
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components by SGS-THOMSON Microelectronics, conveys a licence under the Philips
I2C Patent. Rights to use these components in an I2C system, is grantede provided that the system conforms to
the I2C Standard Specification as defined by Philips.
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7/7
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