SM4T6V8_技术文档

SM4T6V8,A/220,A

SM4T6V8C,CA/220C,CA

TRANSIL

FEATURES

.

PEAK PULSE POWER= 400 W @ 1ms.

BREAKDOWN VOLTAGE RANGE :

From 6V8 to 220 V.

UNI AND BIDIRECTIONAL TYPES.

LOW CLAMPING FACTOR.

FAST RESPONSE TIME:

.

T

: 1ps (0 V to V ).

clamping

JEDEC REGISTRED.

BR

.

SOD 6

(Plastic)

DESCRIPTION

MECHANICAL CHARACTERISTICS

Transil diodes provide high overvoltage

.

Body marked with : Logo, Date Code, Type

Code and Cathode Band (for unidirectional

types only).

Full compatibility with both gluing and paste

soldering technologies.

Excellent on board stability.

Tinned copper leads.

High temperature resistant resin.

protection

by

clamping

action.

Their

instantaneous reponse to transients makes them

praticularly suited to protect voltage sensitive

devices such as MOS Technology and low

voltage supplied IC’s.

.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

P

p

Peak pulse power dissipation

See note 1 and derating curve Fig 1.

Tamb = 25°C

400

W

P

Power dissipation on infinite heatsink

See note 1 and derating curve Fig 1.

Tlead = 50°C

5

W

A

I

Non repetitive surge peak forward current.

For unidirectional types.

Tamb = 25°C

t =10 ms

50

FSM

T

Storage and junction temperature range

- 65 to + 175

150

°C

stg

j

T

L

Maximum lead temperature for soldering

during 10 s.

260

°C

1/7

November 1992

SM4Txx

THERMAL RESISTANCES

Symbol

Parameter

Value

20

Unit

°C/W

R

th

(j-l)

Junction-leads on infinite heatsink

R

th

(j-a)

Junction to ambiant. on printed circuit.

With standard footprint dimensions.

100

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Stand-off voltage.

I

F

V

RM

V

BR

Breakdown voltage.

V

BR

CL

V

I

Clamping voltage.

CL

V

F

RM

Leakage current @ VRM.

Surge current.

V

RM

I

RM

I

PP

Voltage temperature coefficient.

αT

V

F

Forward Voltage drop

I

PP

V

< 3.5V @ I = 25 A.

F

I

@ V

V

@

I

V

@ I

V

@ I

PP

αT

C

RM

BR

R

CL

max

10/1000µs

PP CL

TYPES

max

min nom max

note2

max

typ

8/20µs

note3 note4

-4

10 /°C ( F)

P

Uni

directional

Bi

directional

QD SM4T6V8C VD

µA

V

mA

V

A

V

A

*

SM4T6V8

1000 5.8 6.45 6.8 7.48

1000 5.8 6.45 6.8 7.14

500 6.4 7.13 7.5 8.25

500 6.4 7.13 7.5 7.88

10 8.55 9.5 10 11

10 8.55 9.5 10 10.5

10 10.5 38 13.4 174

10 11.3 35.4 14.5 160

5.7

6.1

7.3

7.8

8.4

8.8

9.2

9.4

9.6

9.7

9.8

9.9

10.0

3500

3100

2000

1550

1200

975

800

725

625

575

SM4T6V8A QE SM4T6V8CA VE

SM4T7V5 QF SM4T7V5C VF

SM4T7V5A QG SM4T7V5CA VG

QN SM4T10C

VN

QP SM4T10CA VP

QS SM4T12C

VS

QT SM4T12CA VT

QW SM4T15C

VW

QX SM4T15CA VX

RD SM4T18C

UD

RE SM4T18CA UE

RH SM4T22C

UH

RK SM4T22CA UK

RL SM4T24C

UL

RM SM4T24CA UM

RN SM4T27C

UN

RP SM4T27CA UP

RQ SM4T30C

UQ

RR SM4T30C4 UR

RS SM4T33C

US

RT SM4T33CA UT

RU SM4T36C

UU

RV SM4T36CA UV

SM4T10

SM4T10A

SM4T12

SM4T12A

SM4T15

SM4T15A

SM4T18

SM4T18A

SM4T22

SM4T22A

SM4T24

SM4T24A

SM4T27

SM4T27A

SM4T30

SM4T30A

SM4T33

SM4T33A

SM4T36

SM4T36A

SM4T39

1

14.5 27.6 18.6 124

16.7 24 21.7 106

21.2 19 27.2 85

25.2 16 32.5 71

30.6 13 39.3 59

33.2 12 42.8 54

37.5 10.7 48.3 48

41.5 9.6 53.5 43

45.7 8.8 59.0 39

5

10.2 11.4 12 13.2

10.2 11.4 12 12.6

12.8 14.3 15 16.5

12.8 14.3 15 15.8

15.3 17.1 18 19.8

15.3 17.1 18 18.9

18.8 20.9 22 24.2

18.8 20.9 22 23.1

20.5 22.8 24 26.4

20.5 22.8 24 25.2

23.1 25.7 27 29.7

23.1 25.7 27 28.4

25.6 28.5 30 33

25.6 28.5 30 31.5

28.2 31.4 33 36.3

28.2 31.4 33 34.7

30.8 34.2 36 39.6

30.8 34.2 36 37.8

33.3 37.1 39 42.9

33.3 37.1 39 41.0

575

510

480

450

49.9

8

64.3 36

RW SM4T39C

RX SM4T39

UW

UX

53.9 7.4 69.7 33

2/7

142

SM4Txx

TYPES

I

@ V

V

@

I

V

@ I

V

@ I

PP

αT

max

C

RM

BR

R

CL

max

10/1000µs

PP CL

max

min nom max

note2

max

typ

8/20µs

note3 note4

-4

10 /°C ( F)

P

Uni

directional

Bi

directional

SN SM4T68C

µA

V

mA

V

A

V

A

*

SM4T68

WN

5

58.1 64.6 68 74.8

58.1 64.6 68 71.4

85.5 95.0 100 110

85.5 95.0 100 105

128 143 150 165

128 143 150 158

171 190 200 220

171 190 200 210

188 209 220 242

188 209 220 231

1

92

4.3 121

19

13

9

10.4

10.6

10.8

270

200

145

120

110

SM4T68A SP SM4T68CA WP

SM4T100 SW SM4T100C WW

SM4T100A SX SM4T100CA WX

SM4T150 TH SM4T150C XH

SM4T150A TK SM4T150CA XK

SM4T200 TS SM4T200C XS

SM4T200A TT SM4T200CA XT

SM4T220 TU SM4T220C XU

SM4T220A TV SM4T220CA XV

137 2.9 178

207 2.0 265

274 1.5 353 6.5

9

328 1.4 388

6

All parameters tested at 25 °C, except where indicated.

* = Marking

Figure 1: Power dissipation derating versus

ambient temperature

% I

PP

100 %

10

s

100

50

0

Peak Power

(on printed circuit).

80 %

PULSE WAVEFORM 10/1000

s

60 %

40 %

Average Power

(on infinite heatsink).

t

20 %

0%

1000

s

Tamb (˚c)

0

20

40 60 80 100 120 140 160 180 200

Note 1 :

For surges greater than the maximum values,

the diode will present a short-circuit Anode - Cathode.

Note 2 :

Note 3 :

Note 4 :

Pulse test: T_P< 50 ms.

∆V_BR= αT _*(Ta - 25) _*V_BR(25°C)

.

VR = 0 V, F = 1 MHz. For bidirectional types,

capacitance value is divided by 2.

3/7

143

SM4Txx

Figure 2 : Peak pulse power versus exponential pulse duration.

Pp (W)

100000

10000

1000

100

Tj initial = 25˚C

tp (mS ) EXPO.

10

0.001

0.01

0.1

1

100

Figure 3 : Clamping voltage versus peak pulse current.

exponential waveform t = 20 µs ________

t = 1 ms ——————-

t =10 ms ...............

V

(V)

CL

1000

% Ipp

100

Tj initial = 25˚C

SM4T 220A

SM4T 150A

50

0

t

r

t

< 10

s

r

100

SM4T 68A

SM4T 39A

SM4T 22A

SM4T 10A

10

SM4T 6V8A

Ipp (A)

1

0.1

1

10

100

1000

Note : The curves of the figure 3 are specified for a junction temperature of 25 °C before surge.

The given results may be extrapolated for other junction temperatures by using the following formula :

∆V

= αT

[T -25]

a

V

.

(BR)

(V(BR)) *

*

For intermediate voltages, extrapolate the given results.

4/7

SM4Txx

Figure 4a : Capacitance versus reverse applied

Figure 4b : Capacitance versus reverse applied

voltage for unidirectional types (typical values).

voltage for bidirectional types (typical values)

C (pF)

10000

C (pF)

10000

Tj = 25˚C

f = 1 MHz

Tj = 25˚C

f = 1 MHz

SM

4

T

6

V8

A

S

M

4

T

6

V

1

8

C

A

SM

4

T 1

T 3

5

1000

100

10

1000

100

10

A

S

M

4

T

5

C

A

4

0

A

S

M

4

T

3

6

0

8

C

A

SM

4

T 6

8

SM

4

T 2

2

0

A

S

M

4

T

2

0

C

A

V

(V)

V

(V)

R

1

10

100

1

10

100

Figure 6 : Transient thermal impedance

junction-ambient versus pulse duration. For a

mounting on PC Board with standard footprint

dimensions.

Figure 5 : Peak forward voltage drop versus

peak forward current (typical values for

unidirectional types).

ZTH j-a ( ˚C/W )

100

10

1

0.01

0.1

1

10

100

1000

5/7

SM4Txx

ORDER CODE

SM 4 T 100 C A

TOLERANCE :

A= +/- 5%

= +/- 10%

SURFACE MOUNT

400 WATT

BIDIRECTIONAL

BREAKDOWN VOLTAGE

MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).

PACKAGE MECHANICAL DATA

SOD 6 (Plastic).

Ref

Millimeters

Inches

E

min

max

2.61

0.20

2.11

3.93

5.59

4.30

1.27

min

max

A

a1

B

2.48

0.10

1.96

3.65

5.39

4.15

1.00

0.096

0.004

0.077

0.143

0.212

0.163

0.039

0.103

0.008

0.083

0.155

0.220

0.170

0.050

B

A

C

D

E

F

Weight = 0.12 g.

a

1

D

FOOTPRINT DIMENSIONS (Millimeter).

SOD 6 Plastic.

Ref

Millimeters

a

b

c

2.75

1.52

2.30

b

a

b

c

Packaging : standard packaging is in film.

6/7

SM4Txx

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express

written approval of SGS-THOMSON Microelectonics.

Purchase of I²C Components by SGS-THOMSON Microelectronics, conveys a licence under the Philips

I²C Patent. Rights to use these components in an I²C system, is grantede provided that the system conforms to

the I²C Standard Specification as defined by Philips.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

7/7


型号：	SM4T6V8
厂家：	ST
描述：	TRANSIL TRANSIL 瞬态抑制器二极管光电二极管局域网
文件：	总7页 (文件大小：128K)
中文：	中文翻译
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SM4T6V8 [STMICROELECTRONICS]

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