MJD32C [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管
| 型号： | MJD32C |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD31B/31C
MJD32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
STMicroelectronics PREFERRED
SALESTYPES
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
■
ELECTRICALLY SIMILAR TO TIP31B/C AND
TIP32B/C
3
APPLICATIONS
1
■
GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
The MJD31B and MJD31C and the MJD32B and
MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effectiveperformance.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
MJD31B
MJD32B
80
MJD31C
MJD32C
100
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
80
100
5
3
V
A
ICM
IB
Collector Peak Current
Base Current
5
A
1
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc = 25 C
15
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
For PNP types the values are intented negative.
1/5
May 1999
MJD31B/31C - MJD32B/32C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
8.33
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = Max Rating
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
20
µA
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
VCE = 60 V
50
µA
Emitter Cut-off Current VEB = 5 V
(IC = 0)
0.1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 30 mA
for MJD31B/32B
for MJD31C/32C
80
100
V
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 3 A
IC = 3 A
IB = 375 mA
1.2
1.8
50
V
VBE(on)
hFE
Base-Emitter Voltage
DC Current Gain
VCE = 4 V
V
IC = 1 A
IC = 3 A
VCE = 4 V
VCE = 4 V
25
10
hfe
Dynamic Current Gain IC = 0.5 A
IC = 0.5 A
VCE = 10 V f = 1 KHz
VCE = 10 V f = 1 MHz
20
3
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curves
2/5
MJD31B/31C - MJD32B/32C
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector-Emitter SaturationVoltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Collector-BaseCapacitance (PNP type)
3/5
MJD31B/31C - MJD32B/32C
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
4/5
MJD31B/31C - MJD32B/32C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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5/5
相关型号：
MJD32CQ-13
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
DIODES
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