MJD32C(TO-251) [JCST]
Transistor;
| 型号： | MJD32C(TO-251) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/252-2L Plastic-Encapsulate Transistors
TO-251
TO-252-2L
MJD32C
TRANSISTOR (PNP)
FEATURES
1.BASE
z
z
z
z
z
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
2.COLLECTOR
3.EMITTER
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
MAX
-100
-100
-5
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V
V
-3
A
PC
1.25
150
W
℃
℃
TJ
Tstg
-65-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test
conditions
MIN
-100
-100
-5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cut-off current
IC= -1mA, IE=0
IC= -30mA, IB=0
IE= -1mA, IC=0
V
V
ICES
ICEO
-20
-50
-1
μA
μA
mA
VCE=-100V, VEB=0
VCE= -60V, IB= 0
VEB=-5V, IC=0
Collector cut-off current
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
fT
VCE= -4V, IC=-1A
VCE=-4 V, IC=-3A
IC=-3A, IB=-0.375A
VCE= -4V, IC=-3A
25
10
DC current gain
50
Collector-emitter saturation voltage
Base-emitter voltage
-1.2
-1.8
V
V
Transition frequency
VCE=-10V , IC=-0.5A,fT=1KHz
3
MHZ
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Typical Characteristics
MJD32C
相关型号：
MJD32CQ-13
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
DIODES
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