M74HCT30B1R [STMICROELECTRONICS]
8 INPUT NAND GATE; 8输入与非门
| 型号： | M74HCT30B1R |
| 厂家： | 
ST |
| 描述： | 8 INPUT NAND GATE |
| 文件： | 总9页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54HCT30
M74HCT30
8 INPUT NAND GATE
.
.
.
.
.
.
.
HIGH SPEED
tPD = 15 ns (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 1 µA (MAX.) AT TA = 25 °C
COMPATIBLE WITH TTL OUTPUTS
VIH = 2V (MIN.) VIL = 0.8V (MAX)
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
IOH = IOL = 4 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
PIN AND FUNCTION COMPATIBLE WITH
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
54/74LS30
ORDER CODES :
DESCRIPTION
M54HCT30F1R
M74HCT30M1R
M74HCT30B1R
M74HCT30C1R
The M54/74HCT30 is a high speed CMOS 8-INPUT
NAND GATE fabricated with silicon gate C2MOS
technology.
PIN CONNECTIONS (top view)
It has the same high speed performance of LSTTL
combined with true CMOS low power consumption.
The internal circuit is composed of 5 stages includ-
ing buffer output, which gives high noise immunity
and stable output. All inputs are equipped with pro-
tectioncircuits against static discharge and transient
excess voltage.This integrated circuit has input and
output characteristics that are fully compatible with
54/74 LSTTL logic families. M54/74HCT devices
are designed to directly interface HSC2MOS sys-
tems with TTL and NMOS components. They are
also plug in replacements for LSTTL devices giving
a reduction of power consumption.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
NC =
No Internal
Connection
February 1993
1/9
M54/M74HCT30
TRUTH TABLE
IEC LOGIC SYMBOL
A
L
B
X
L
X
X
X
X
X
X
H
C
X
X
L
D
X
X
X
L
X
X
X
X
H
E
X
X
X
X
L
X
X
X
H
F
X
X
X
X
X
L
G
X
X
X
X
X
X
L
H
X
X
X
X
X
X
X
L
Y
H
H
H
H
H
H
H
H
L
X
X
X
X
X
X
X
H
X
X
X
X
X
H
X
X
H
X
H
H
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 2, 3, 4,
A, B, C, D, Data Inputs
5, 6, 11, 12 E, F, G, H
9, 10, 13
NC
Y
GND
VCC
Not connected
Data Outputs
Ground (0V)
8
7
14
Positive Supply Voltage
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
± 20
DC Input Voltage
V
VO
DC Output Voltage
V
IIK
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
mA
mA
mA
mA
mW
oC
IOK
± 20
IO
± 25
ICC or IGND DC VCC or Ground Current
± 50
PD
Tstg
TL
Power Dissipation
500 (*)
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
oC
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
2/9
M54/M74HCT30
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
4.5 to 5.5
0 to VCC
0 to VCC
Unit
V
Supply Voltage
Input Voltage
Output Voltage
V
VO
V
Top
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
oC
oC
tr, tf
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
0 to 500
ns
DC SPECIFICATIONS
Test Conditions
VCC
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
VIH
Parameter
Unit
V
(V)
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
4.5
to
2.0
2.0
2.0
5.5
VIL
Low Level Input
Voltage
4.5
to
0.8
0.8
0.8
V
5.5
VOH
High Level
VI = IO=-20 µA
4.4
4.5
4.4
4.4
Output Voltage
VIH
or
VIL
4.5
V
V
IO=-4.0 mA 4.18 4.31
4.13
4.10
VOL
Low Level Output
Voltage
VI = IO= 20 µA
VIH
or
VIL
0.0
0.1
0.1
0.33
±1
0.1
0.4
±1
4.5
5.5
IO= 4.0 mA
0.17 0.26
II
Input Leakage
Current
VI = VCC or GND
±0.1
1
µA
µA
ICC
Quiescent Supply 5.5 VI = VCC or GND
Current
10
20
∆ICC
Additional worst
case supply
current
5.5
Per Input pin
VI = 0.5V or
VI = 2.4V
2.0
2.9
3.0
mA
Other Inputs at
VCC or GND
IO= 0
3/9
M54/M74HCT30
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Test Conditions
Value
TA = 25 oC
54HC and 74HC
-40 to 85 oC -55 to 125 oC
Symbol
Parameter
Unit
VCC
74HC
54HC
(V)
4.5
Min. Typ. Max. Min. Max. Min. Max.
tTLH
tTHL
tPLH
tPHL
Output Transition
Time
8
15
28
10
19
35
10
22
42
10
ns
Propagation
Delay Time
4.5
18
ns
pF
pF
CIN
Input Capacitance
5
CPD (*) Power Dissipation
Capacitance
34
(*) CPD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC
SWITCHING CHARACTERISTICS TEST CIRCUIT
TEST CIRCUIT ICC (Opr.)
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICSTEST.
4/9
M54/M74HCT30
Plastic DIP14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.51
1.39
TYP.
MAX.
MIN.
0.020
0.055
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
15.24
0.335
0.100
0.600
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
5/9
M54/M74HCT30
Ceramic DIP14/1 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
20
MIN.
MAX.
0.787
0.276
A
B
7.0
D
E
3.3
0.130
0.600
0.38
0.015
e3
F
15.24
2.29
0.4
2.79
0.55
1.52
0.31
2.54
10.3
8.05
5.08
0.090
0.016
0.046
0.009
0.060
0.110
0.022
0.060
0.012
0.100
0.406
0.317
0.200
G
H
L
1.17
0.22
1.52
M
N
P
7.8
0.307
Q
P053C
6/9
M54/M74HCT30
SO14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.2
MIN.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.003
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
8.55
5.8
8.75
6.2
0.336
0.228
0.344
0.244
E
e
1.27
7.62
0.050
0.300
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.026
G
L
1.27
0.68
M
S
8° (max.)
P013G
7/9
M54/M74HCT30
PLCC20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
9.78
8.89
4.2
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
MAX.
0.395
0.356
0.180
A
B
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
8/9
M54/M74HCT30
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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9/9
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