M74HCT30TTR [STMICROELECTRONICS]
8-INPUT NAND GATE; 8输入与非门型号: | M74HCT30TTR |
厂家: | ST |
描述: | 8-INPUT NAND GATE |
文件: | 总8页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M74HCT30
8-INPUT NAND GATE
■
■
■
■
■
■
HIGH SPEED:
= 18ns (TYP.) at V = 4.5V
t
PD
CC
LOW POWER DISSIPATION:
= 1µA(MAX.) at T =25°C
I
CC
A
COMPATIBLE WITH TTL OUTPUTS :
= 2V (MIN.) V = 0.8V (MAX)
V
IH
IL
DIP
SOP
TSSOP
T & R
BALANCED PROPAGATION DELAYS:
t
t
PLH
PHL
SYMMETRICAL OUTPUT IMPEDANCE:
|I | = I = 4mA (MIN)
ORDER CODES
PACKAGE
OH
OL
TUBE
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 30
DIP
SOP
M74HCT30B1R
M74HCT30M1R
M74HCT30RM13TR
M74HCT30TTR
TSSOP
DESCRIPTION
The M74HCT30 is an high speed CMOS 8-INPUT
2
NAND GATE fabricated with silicon gate C MOS
technology.
The M74HCT30 is designed to directly interface
HSC MOS systems with TTL and NMOS
2
The internal circuit is composed of 5 stages
including buffer output, which enables high noise
immunity and stable output.
components.All inputs are equipped with
protection circuits against static discharge and
transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
September 2001
1/8
M74HCT30
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 2, 3 ,4, 5, A, B, C, D, E,
Data Inputs
6, 11, 12
F, G, H,
9, 10, 13
NC
Not connected
Data Output
8
7
Y
GND
Ground (0V)
V
14
Positive Supply Voltage
CC
TRUTH TABLE
A
B
C
D
E
F
G
H
Y
L
X
X
X
X
X
X
X
H
X
L
X
X
L
X
X
X
L
X
X
X
X
L
X
X
X
X
X
L
X
X
X
X
X
X
L
X
X
X
X
X
X
X
L
H
H
H
H
H
H
H
H
L
X
X
X
X
X
X
H
X
X
X
X
X
H
X
X
X
X
H
X
X
X
H
X
X
H
X
H
H
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
V
V
CC
V
DC Input Voltage
-0.5 to V + 0.5
I
CC
V
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
-0.5 to V + 0.5
V
O
CC
I
± 20
± 20
mA
mA
mA
mA
mW
°C
IK
I
OK
I
± 25
O
I
or I
DC V
or Ground Current
CC
± 50
CC
GND
P
Power Dissipation
500(*)
-65 to +150
300
D
T
Storage Temperature
Lead Temperature (10 sec)
stg
T
°C
L
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
Supply Voltage
4.5 to 5.5
V
V
CC
V
Input Voltage
0 to V
I
CC
V
Output Voltage
0 to V
V
O
CC
T
Operating Temperature
-55 to 125
0 to 500
°C
ns
op
t , t
Input Rise and Fall Time (V = 4.5 to 5.5V)
CC
r
f
2/8
M74HCT30
DC SPECIFICATIONS
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
T
= 25°C
Symbol
Parameter
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
V
High Level Input
Voltage
4.5
to
IH
2.0
2.0
2.0
V
5.5
V
Low Level Input
Voltage
4.5
to
IL
0.8
0.1
0.8
0.8
V
V
5.5
V
High Level Output
Voltage
I =-20 µA
4.4
4.5
4.4
4.4
OH
O
4.5
I =-4.0 mA
4.18 4.31
0.0
4.13
4.10
O
V
Low Level Output
Voltage
I =20 µA
0.1
0.1
OL
O
4.5
5.5
V
I =4.0 mA
0.17 0.26
0.33
0.40
O
I
Input Leakage
Current
I
V = V
or GND
± 0.1
± 1
± 1
µA
I
CC
CC
I
Quiescent Supply
Current
CC
V = V
or GND
5.5
5.5
1
10
20
µA
I
∆ I
Additional Worst
Case Supply
Current
Per Input pin
V = 0.5V or
2.0
2.9
3.0
mA
CC
I
V = 2.4V
I
Other Inputs at
V
or GND
CC
I
= 0
O
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6ns)
L
r
f
Test Condition
Value
T
= 25°C
Symbol
Parameter
-40 to 85°C -55 to 125°C Unit
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
t
t
Output Transition
Time
TLH THL
4.5
4.5
8
15
28
19
35
22
42
ns
ns
t
t
Propagation Delay
Time
PLH PHL
18
CAPACITIVE CHARACTERISTICS
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
T
= 25°C
Symbol
Parameter
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
C
Input Capacitance
5
10
10
10
pF
pF
IN
C
Power Dissipation
Capacitance (note
1)
PD
34
1) C is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
PD
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= C x V x f + I
CC(opr)
PD CC IN CC
3/8
M74HCT30
TEST CIRCUIT
C
R
= 50pF or equivalent (includes jig and probe capacitance)
L
T
= Z
of pulse generator (typically 50Ω)
OUT
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
4/8
M74HCT30
Plastic DIP-14 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
0.51
1.39
TYP
MAX.
MIN.
0.020
0.055
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
15.24
0.335
0.100
0.600
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
5/8
M74HCT30
SO-14 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.2
MIN.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.003
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
8.55
5.8
8.75
6.2
0.336
0.228
0.344
0.244
E
e
1.27
7.62
0.050
0.300
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.026
G
L
1.27
0.68
M
S
8° (max.)
PO13G
6/8
M74HCT30
TSSOP14 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.2
MIN.
MAX.
0.047
0.006
0.041
0.012
0.0089
0.201
0.260
0.176
A
A1
A2
b
0.05
0.8
0.15
1.05
0.30
0.20
5.1
0.002
0.031
0.007
0.004
0.193
0.244
0.169
0.004
0.039
1
0.19
0.09
4.9
c
D
5
6.4
0.197
0.252
E
6.2
6.6
E1
e
4.3
4.4
4.48
0.173
0.65 BSC
0.0256 BSC
K
0°
8°
0°
8°
L
0.45
0.60
0.75
0.018
0.024
0.030
A2
A
K
L
b
e
A1
c
E
D
E1
PIN 1 IDENTIFICATION
1
0080337D
7/8
M74HCT30
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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