M40Z300MQ6E [STMICROELECTRONICS]
5V or 3V NVRAM supervisor for up to 8 LPSRAMs; 5V或3V NVRAM主管长达8 LPSRAMs
| 型号： | M40Z300MQ6E |
| 厂家： | 
ST |
| 描述： | 5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| 文件： | 总25页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M40Z300
M40Z300W
5V or 3V NVRAM supervisor for up to 8 LPSRAMs
Features
■ Converts low power SRAM into NVRAMs
■ Precision power monitoring and power
switching circuitry
■ Automatic WRITE-protection when V is out-
CC
16
of-tolerance
1
■ Two-input decoder allows control for up to 8
SRAMs (with 2 devices active in parallel)
■ Choice of supply voltages and power-fail
SO16 (MQ)
deselect voltages:
– M40Z300:
V
= 4.5V to 5.5V
CC
THS = V : 4.5V ≤ V
≤ 4.75V
≤ 4.5V
SS
PFD
THS = V
: 4.2V ≤ V
OUT
PFD
– M40Z300W:
= 3.0V to 3.6V
SNAPHAT (SH)
crystal/battery
V
CC
THS = V : 2.8V ≤ V
CC
≤ 3.0V
≤ 2.7V
SS
PFD
V
= 2.7V to 3.3V
THS = V
: 2.5 ≤ V
OUT
PFD
■ Reset output (RST) for power on reset
■ Battery low pin (BL)
■ Less than 12ns chip enable access
propagation delay (for 5.0V device)
■ Packaging includes a 28-lead SOIC and
28
®
SNAPHAT top (to be ordered separately), or
1
A 16-lead SOIC
■ SOIC package provides direct connection for a
SOH28 (MH)
SNAPHAT top which contains the battery
■ RoHS compliant
– Lead-free second level interconnect
November 2007
Rev 4
1/25
www.st.com
1
Contents
M40Z300, M40Z300W
Contents
1
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1
2.2
2.3
2.4
2.5
Two to four decode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Data retention lifetime calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Power-on reset output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Battery low pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2/25
M40Z300, M40Z300W
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
DC and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Power down/up mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SOH28 – 28-lead plastic small outline, battery SNAPHAT, package mechanical data . . . 19
SH – 4-pin SNAPHAT housing for 48mAh battery, package mechanical data. . . . . . . . . . 20
SH – 4-pin SNAPHAT housing for 120mAh battery, package mechanical data. . . . . . . . . 21
SO16 – 16-lead plastic small outline, 150 mils body width, package mechanical data . . . 22
Ordering information example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SNAPHAT® battery table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3/25
List of figures
M40Z300, M40Z300W
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
28-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
M40Z300 16-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
M40Z300W 16-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Hardware hookup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Address-decode time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC testing load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Power down timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 10. Power up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 11. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT, package outline . . . . 18
Figure 12. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline. . . . . . . . . . . . . . . . . . 20
Figure 13. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline. . . . . . . . . . . . . . . . . 21
Figure 14. SO16 – 16-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . 22
4/25
M40Z300, M40Z300W
Description
1
Description
The M40Z300/W NVRAM SUPERVISOR is a self-contained device which converts a
standard low-power SRAM into a non-volatile memory. A precision voltage reference and
comparator monitors the V input for an out-of-tolerance condition.
CC
When an invalid V condition occurs, the conditioned chip enable outputs (E1
to
CC
CON
E4
) are forced inactive to write-protect the stored data in the SRAM. During a power
CON
®
failure, the SRAM is switched from the V pin to the lithium cell within the SNAPHAT to
CC
provide the energy required for data retention. On a subsequent power-up, the SRAM
remains write protected until a valid power condition returns.
The 28-pin, 330mil SOIC provides sockets with gold plated contacts for direct connection to
a separate SNAPHAT housing containing the battery. The SNAPHAT housing has gold
plated pins which mate with the sockets, ensuring reliable connection. The housing is keyed
to prevent improper insertion. This unique design allows the SNAPHAT battery package to
be mounted on top of the SOIC package after the completion of the surface mount process
which greatly reduces the board manufacturing process complexity of either directly
soldering or inserting a battery into a soldered holder. Providing non-volatility becomes a
“SNAP.” The 16-pin SOIC provides battery pins for an external user-supplied battery.
Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the
high temperatures required for device surface-mounting. The SNAPHAT housing is also
keyed to prevent reverse insertion.
The 28-pin SOIC and battery packages are shipped separately in plastic anti-static tubes or
in tape & reel form. For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part
number is “M4ZXX-BR00SH” (see Table 13 on page 23).
Caution:
Do not place the SNAPHAT battery top in conductive foam, as this will drain the lithium
button-cell battery.
5/25
Description
M40Z300, M40Z300W
Figure 1.
Logic diagram
(1)
V
B +
CC
THS
V
OUT
E
B
A
BL
E1
E2
E3
E4
CON
CON
CON
CON
M40Z300
M40Z300W
RST
(1)
V
SS
B –
AI02242
1. For 16-pin SOIC package only.
Table 1.
Signal names
THS
Threshold select input
Chip enable input
E
E1CON - E4CON
Conditioned chip enable output
Decoder inputs
A, B
RST
BL
Reset output (open drain)
Battery low output (open drain)
Supply voltage output
Supply voltage
VOUT
VCC
VSS
B +
Ground
Positive battery pin
B –
Negative battery pin(1)
Not connected internally
NC
1. For M40Z300W, B– must be connected to the negative battery terminal only (not to Pin 8, VSS).
6/25
M40Z300, M40Z300W
Figure 2.
Description
28-pin SOIC connections
V
1
28
V
E
OUT
NC
CC
2
27
NC
RST
NC
A
3
26
NC
NC
NC
E1
4
25
5
24
23
6
CON
NC
B
7
M40Z300 22
E2
CON
M40Z300W
8
21
20
19
18
17
16
15
NC
E3
NC
BL
9
CON
10
11
12
13
14
NC
NC
NC
E4
NC
NC
THS
CON
V
NC
SS
AI02243
Figure 3.
M40Z300 16-pin SOIC connections
V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC
B +
OUT
NC
RST
A
E
E1
CON
M40Z300
B
E2
E3
E4
CON
CON
CON
BL
THS
V
B –
SS
AI03624
Figure 4.
M40Z300W 16-pin SOIC connections
V
V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
CC
OUT
NC
(1)
B –
RST
A
E
E1
CON
CON
CON
CON
M40Z300W
B
E2
E3
E4
BL
THS
V
B +
SS
AI06350
1. For M40Z300W, B– must be connected to the negative battery terminal only (not to pin 8, VSS).
7/25
Description
Figure 5.
M40Z300, M40Z300W
Hardware hookup
3.0V, 3.3V or 5V
V
V
OUT
CC
V
V
V
V
CC
(1)
CC
(1)
CC
(1)
CC
0.1μF
(1)
E2
E2
E2
E2
M40Z300
M40Z300W
CMOS
SRAM
CMOS
SRAM
CMOS
SRAM
CMOS
SRAM
0.1μF
0.1μF
0.1μF
0.1μF
E
E
E
E
E1
CON
A
B
E
E2
E3
E4
CON
CON
CON
Threshold
THS
RST
BL
To Microprocessor
V
To Battery Monitor Circuit
SS
AI02395
1. If the second chip enable pin (E2) is unused, it should be tied to VOUT
.
8/25
M40Z300, M40Z300W
Operation
2
Operation
The M40Z300/W, as shown in Figure 5 on page 8, can control up to four (eight, if placed in
parallel) standard low-power SRAMs. These SRAMs must be configured to have the chip
enable input disable all other input signals. Most slow, low-power SRAMs are configured like
this, however many fast SRAMs are not. During normal operating conditions, the
conditioned chip enable (E1
to E4
) output pins follow the chip enable (E) input pin
CON
CON
with timing shown in Figure 6 on page 10 and Table 7 on page 17. An internal switch
connects V to V . This switch has a voltage drop of less than 0.3V (I ).
CC
OUT
OUT1
When V degrades during a power failure, E1
to E4
are forced inactive
CON
CC
CON
independent of E. In this situation, the SRAM is unconditionally write protected as V falls
CC
below an out-of-tolerance threshold (V
). For the M40Z300 the power fail detection value
PFD
associated with V
is selected by the Threshold Select (THS) pin and is shown in Table 6
PFD
on page 15. For the M40Z300W, the THS pin selects both the supply voltage and V
shown in Table 6 on page 15).
(also
PFD
Note:
In either case, THS pin must be connected to either V or V
.
SS
OUT
If chip enable access is in progress during a power fail detection, that memory cycle
continues to completion before the memory is write protected. If the memory cycle is not
terminated within time t , E1 to E4 are unconditionally driven high, write
WPT
CON
CON
protecting the SRAM. A power failure during a WRITE cycle may corrupt data at the
currently addressed location, but does not jeopardize the rest of the SRAM's contents. At
voltages below V
(min), the user can be assured the memory will be write protected
PFD
within the Write Protect Time (t
) provided the V fall time exceeds t (see Figure 6 on
WPT
CC F
page 10).
As V continues to degrade, the internal switch disconnects V and connects the internal
CC
CC
battery to V
. This occurs at the switchover voltage (V ). Below the V , the battery
OUT
SO SO
provides a voltage V
to the SRAM and can supply current I
(see Table 6 on
OHB
OUT2
page 15).
When V rises above V , V
is switched back to the supply voltage. Outputs E1
CON
to
CC
SO OUT
E4
are held inactive for t
(120ms maximum) after the power supply has reached
CON
CER
V
, independent of the E input, to allow for processor stabilization (see Figure 10 on
PFD
page 16).
9/25
Operation
M40Z300, M40Z300W
2.1
Two to four decode
The M40Z300/W includes a 2 input (A, B) decoder which allows the control of up to 4
independent SRAMs. The Truth Table for these inputs is shown in Table 2.
Table 2.
E
Truth table
Inputs
Outputs
B
A
E1CON
E2CON
E3CON
E4CON
H
L
L
L
L
X
L
X
L
H
L
H
H
L
H
H
H
L
H
H
H
H
L
L
H
L
H
H
H
H
H
H
H
H
H
Figure 6.
Address-decode time
A, B
tAS
E
tEDL
tEDH
E1
- E4
CON
CON
AI02551
Note:
During system design, compliance with the SRAM timing parameters must comprehend the
propagation delay between E1 - E4
.
CON
CON
2.2
Data retention lifetime calculation
Most low power SRAMs on the market today can be used with the M40Z300/W NVRAM
SUPERVISOR. There are, however some criteria which should be used in making the final
choice of which SRAM to use. The SRAM must be designed in a way where the chip enable
input disables all other inputs to the SRAM. This allows inputs to the M40Z300/W and
SRAMs to be “Don't Care” once V falls below V
(min). The SRAM should also
CC
PFD
guarantee data retention down to V = 2.0V. The chip enable access time must be
CC
sufficient to meet the system needs with the chip enable propagation delays included. If the
SRAM includes a second chip enable pin (E2), this pin should be tied to V
.
OUT
If data retention lifetime is a critical parameter for the system, it is important to review the
data retention current specifications for the particular SRAMs being evaluated. Most SRAMs
specify a data retention current at 3.0V. Manufacturers generally specify a typical condition
for room temperature along with a worst case condition (generally at elevated
temperatures). The system level requirements will determine the choice of which value to
use.
The data retention current value of the SRAMs can then be added to the I
value of the
BAT
M40Z300/W to determine the total current requirements for data retention. The available
10/25
M40Z300, M40Z300W
Operation
®
battery capacity for the SNAPHAT of your choice can then be divided by this current to
determine the amount of data retention available (see Table 13 on page 23).
Caution:
Take care to avoid inadvertent discharge through V
been attached.
and E1
- E4
after battery has
CON
OUT
CON
For a further more detailed review of lifetime calculations, please see Application Note
AN1012.
2.3
Power-on reset output
All microprocessors have a reset input which forces them to a known state when starting.
The M40Z300/W has a reset output (RST) pin which is guaranteed to be low within t
of
WPT
V
(see Table 7). This signal is an open drain configuration. An appropriate pull-up
PFD
resistor should be chosen to control the rise time. This signal will be valid for all voltage
conditions, even when V equals V
.
SS
CC
Once V exceeds the power failure detect voltage V
, an internal timer keeps RST low
CC
PFD
for t
to allow the power supply to stabilize.
REC
2.4
Battery low pin
The M40Z300/W automatically performs battery voltage monitoring upon power-up, and at
factory-programmed time intervals of at least 24 hours. The Battery Low (BL) pin will be
asserted if the battery voltage is found to be less than approximately 2.5V. The BL pin will
remain asserted until completion of battery replacement and subsequent battery low
monitoring tests, either during the next power-up sequence or the next scheduled 24-hour
interval.
If a battery low is generated during a power-up sequence, this indicates that the battery is
below 2.5V and may not be able to maintain data integrity in the SRAM. Data should be
considered suspect, and verified as correct. A fresh battery should be installed.
If a battery low indication is generated during the 24-hour interval check, this indicates that
the battery is near end of life. However, data is not compromised due to the fact that a
nominal V is supplied. In order to insure data integrity during subsequent periods of
CC
®
battery back-up mode, the battery should be replaced. The SNAPHAT top should be
replaced with valid V applied to the device.
CC
The M40Z300/W only monitors the battery when a nominal V is applied to the device.
CC
Thus appli-cations which require extensive durations in the battery back-up mode should be
powered-up periodically (at least once every few months) in order for this technique to be
beneficial. Additionally, if a battery low is indicated, data integrity should be verified upon
power-up via a checksum or other technique. The BL pin is an open drain output and an
appropriate pull-up resistor to V should be chosen to control the rise time.
CC
2.5
VCC noise and negative going transients
I
transients, including those produced by output switching, can produce voltage
CC
fluctuations, resulting in spikes on the V bus. These transients can be reduced if
CC
capacitors are used to store energy which stabilizes the V bus. The energy stored in the
CC
bypass capacitors will be released as low going spikes are generated or energy will be
11/25
Operation
M40Z300, M40Z300W
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in
Figure 7) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V that drive it to values below V by as much as
CC
SS
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a schottky diode from V to V (cathode connected to V , anode to V ).
CC
SS
CC
SS
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
Figure 7.
Supply voltage protection
V
CC
V
V
CC
0.1μF
DEVICE
SS
AI00622
12/25
M40Z300, M40Z300W
Maximum rating
3
Maximum rating
Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 3.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
Grade 1
Grade 6
SNAPHAT®
SOIC
0 to 70
–40 to 85
–40 to 85
–55 to 125
260
°C
°C
°C
°C
°C
V
TA
Ambient operating temperature
Storage temperature
TSTG
(1)
TSLD
VIO
Lead solder temperature for 10 seconds
Input or output voltage
–0.3 to VCC + 0.3
–0.3 to 7.0
–0.3 to 4.6
20
M40Z300
M40Z300W
V
VCC
Supply voltage
V
IO
Output current
mA
W
PD
Power dissipation
1
1. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260°C (total thermal
budget not to exceed 245°C for greater than 30 seconds).
Caution:
Caution:
Negative undershoots below –0.3V are not allowed on any pin while in the battery back-up
mode.
Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
13/25
DC and AC parameters
M40Z300, M40Z300W
4
DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC Characteristic
tables are derived from tests performed under the Measurement Conditions listed in Table 4:
DC and AC measurement conditions. Designers should check that the operating conditions
in their projects match the measurement conditions when using the quoted parameters.
Table 4.
DC and AC measurement conditions
Parameter
M40Z300
M40Z300W
VCC supply voltage
4.5 to 5.5V
0 to 70°C
–40 to 85°C
100pF
2.7 to 3.6V
0 to 70°C
–40 to 85°C
50pF
Grade 1
Grade 6
Ambient operating temperature
Load capacitance (CL)
Input rise and fall times
Input pulse voltages
≤ 5ns
≤ 5ns
0 to 3V
0 to 3V
Input and output timing ref. voltages
1.5V
1.5V
Note:
Output High Z is defined as the point where data is no longer driven.
Figure 8.
AC testing load circuit
333Ω
DEVICE
UNDER
TEST
1.73V
C
= 100pF
or 50pF
L
C
includes JIG capacitance
L
AI02393
Note:
50pF for M40Z300W.
Table 5.
Symbol
CIN
Capacitance
Parameter(1)(2)
Input capacitance
Min
Max
Unit
8
pF
pF
(3)
COUT
Input/output capacitance
10
1. Sampled only, not 100% tested.
2. At 25°C, f = 1MHz.
3. Outputs deselected.
14/25
M40Z300, M40Z300W
DC and AC parameters
Table 6.
DC characteristics
M40Z300
Typ
M40Z300W
Unit
Sym
Parameter
Test condition(1)
Min
Max
Min Typ
Max
(2)
ILI
Input leakage current
0V ≤ VIN ≤ VCC
1
6
1
4
µA
mA
V
ICC Supply current
Outputs open
3
2
VIL Input low voltage
VIH Input high voltage
Output low voltage
–0.3
2.2
0.8
–0.3
2.0
0.8
VCC + 0.3
0.4
VCC + 0.3
0.4
V
IOL = 4.0mA
IOL = 10mA
V
VOL
Output low voltage
(open drain)(3)
0.4
0.4
V
VOH Output high voltage
VOHB VOH battery back-up(4)
IOH = –2.0mA
IOUT2 = –1.0µA
VOUT > VCC –0.3
VOUT > VCC –0.2
2.4
2.0
2.4
2.0
V
2.9
3.6
250
150
2.9
3.6
150
100
V
mA
mA
IOUT1 VOUT current (active)
VOUT current (battery
back-up)
IOUT2
VOUT > VBAT –0.3
100
100
µA
nA
V
Data retention mode
ICCDR
100
VOUT
4.75
4.5
100
VOUT
3.0
current(5)
Threshold select
voltage
THS
VSS
4.5
4.2
VSS
2.8
2.5
Power-fail deselect
4.6
2.9
2.6
V
voltage (THS = VSS
)
VPFD
Power-fail deselect
4.35
2.7
V
voltage (THS = VOUT
)
Battery back-up
switchover voltage
VSO
3.0
2.9
2.5
2.9
V
V
VBAT Battery voltage
2.0
3.6
2.0
3.6
1. Valid for ambient operating temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to 5.5V (except where
noted).
2. Outputs deselected.
3. For RST & BL pins (open drain).
4. Chip enable outputs (E1CON - E4CON) can only sustain CMOS leakage currents in the battery back-up mode.
Higher leakage currents will reduce battery life.
5. Measured with VOUT and E1CON - E4CON open.
15/25
DC and AC parameters
Figure 9. Power down timing
M40Z300, M40Z300W
V
V
CC
(max)
(min)
PFD
V
V
V
PFD
PFD
SO
tF
tFB
E
tWPT
V
OHB
E1
E4
CON
CON
-
RST
AI02398B
Figure 10. Power up timing
V
CC
V
V
V
(max)
(min)
PFD
PFD
PFD
V
SO
tR
tRB
tCER
E
tEDH
tEDL
V
OHB
E1
E4
CON
CON
-
tREC
RST
AI02399B
16/25
M40Z300, M40Z300W
DC and AC parameters
Table 7.
Symbol
Power down/up mode AC characteristics
Parameter(1)
Min
Max
Unit
(2)
tF
VPFD (max) to VPFD (min) VCC fall time
300
10
µs
µs
µs
µs
ns
ns
ns
ns
ns
ms
ms
µs
µs
µs
M40Z300
(3)
tFB
VPFD (min) to VSS VCC fall time
M40Z300W
150
10
tR
VPFD(min) to VPFD (max) VCC rise time
Chip enable propagation delay low
M40Z300
M40Z300W
M40Z300
12
20
10
20
tEDL
tEDH
Chip enable propagation delay high
M40Z300W
tAS
A, B set up to E
0
tCER
Chip enable recovery
VPFD (max) to RST high
40
40
40
40
1
120
120
150
250
(4)
tREC
M40Z300
tWPT
Write protect time
M40Z300W
tRB
VSS to VPFD (min) VCC rise time
1. Valid for ambient operating temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to
5.5V(except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring
until 200 µs after VCC passes VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
4. tREC (min) = 20ms for industrial temperature Grade 6 device.
17/25
Package mechanical data
M40Z300, M40Z300W
5
Package mechanical data
®
In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect. The category of
second Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Figure 11. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT,
package outline
A2
A
C
eB
B
e
CP
D
N
E
H
A1
α
L
1
SOH-A
Note:
Drawing is not to scale.
18/25
M40Z300, M40Z300W
Table 8.
Package mechanical data
SOH28 – 28-lead plastic small outline, battery SNAPHAT, package
mechanical data
mm
Min
inches
Min
Symbol
Typ
Max
Typ
Max
A
A1
A2
B
3.05
0.36
2.69
0.51
0.32
18.49
8.89
–
0.120
0.014
0.106
0.020
0.012
0.728
0.350
–
0.05
2.34
0.36
0.15
0.002
0.092
0.014
0.006
0.697
0.324
–
C
D
17.71
8.23
–
E
e
1.27
0.050
eB
H
3.20
11.51
0.41
0°
3.61
12.70
1.27
8°
0.126
0.453
0.016
0°
0.142
0.500
0.050
8°
L
a
N
28
28
CP
0.10
0.004
19/25
Package mechanical data
M40Z300, M40Z300W
Figure 12. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline
A2
A1
A
A3
L
eA
D
B
eB
E
SHZP-A
Note:
Drawing is not to scale.
Table 9. SH – 4-pin SNAPHAT housing for 48mAh battery, package mechanical data
Symbol
mm
Min
inches
Min
Typ
Max
Typ
Max
A
A1
A2
A3
B
9.78
7.24
0.385
0.285
0.275
0.015
0.022
0.860
0.590
0.628
0.142
0.090
6.73
6.48
0.265
0.255
6.99
0.38
0.46
21.21
14.22
15.55
3.20
0.56
21.84
14.99
15.95
3.61
0.018
0.835
0.560
0.612
0.126
0.080
D
E
eA
eB
L
2.03
2.29
20/25
M40Z300, M40Z300W
Package mechanical data
Figure 13. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline
A2
A1
A
A3
L
eA
D
B
eB
E
SHZP-A
Note:
Drawing is not to scale.
Table 10. SH – 4-pin SNAPHAT housing for 120mAh battery, package mechanical data
mm
inches
Symbol
Typ
Min
Max
Typ
Min
Max
A
A1
A2
A3
B
10.54
8.51
0.415
.0335
0.315
0.015
0.022
0.860
0.710
0.628
0.142
0.090
8.00
7.24
0.315
0.285
8.00
0.38
0.46
21.21
17.27
15.55
3.20
0.56
0.018
0.835
0.680
0.612
0.126
0.080
D
21.84
18.03
15.95
3.61
E
eA
eB
L
2.03
2.29
21/25
Package mechanical data
M40Z300, M40Z300W
Figure 14. SO16 – 16-lead plastic small outline, 150 mils body width, package
outline
A2
A
C
B
CP
e
D
N
1
E
H
A1
α
L
SO-b
Note:
Drawing is not to scale.
Table 11. SO16 – 16-lead plastic small outline, 150 mils body width, package
mechanical data
mm
inches
Min.
Symbol
Typ.
Min.
Max.
Typ.
Max.
A
A1
A2
B
1.75
0.25
1.60
0.46
0.25
10.00
4.00
–
0.069
0.010
0.063
0.018
0.010
0.394
0.158
–
0.10
0.004
0.35
0.19
9.80
3.80
–
0.014
0.007
0.386
0.150
–
C
D
E
e
1.27
0.050
H
5.80
0.40
0°
6.20
1.27
8°
0.228
0.016
0°
0.244
0.050
8°
L
a
N
16
16
CP
0.10
0.004
22/25
M40Z300, M40Z300W
Part numbering
6
Part numbering
Table 12. Ordering information example
Example:
M40Z
300W
MH
1
E
Device type
M40Z
Supply and write protect voltage
300 = VCC = 4.5 to 5.5V
THS = VSS = 4.5V ≤ VPFD ≤ 4.75V
THS = VOUT = 4.2V ≤ VPFD ≤ 4.5V
300W = VCC = 3.0 to 3.6V
THS = VSS = 2.8V ≤ VPFD ≤ 3.0V
VCC = 2.7V to 3.3V
THS = VOUT = 2.5V ≤ VPFD ≤ 2.7V
Package
MH (1) = SOH28
MQ = SO16
Temperature range
1 = 0 to 70°C
6 = –40 to 85°C
Shipping method for SOIC
E = Lead-free package (ECOPACK®), tubes
F = Lead-free package (ECOPACK®), tape & reel
1. The SOIC package (SOH28) requires the battery package (SNAPHAT®) which is ordered separately under
the part number “M4Zxx-BR00SH” in plastic tubes or “M4Zxx-BR00SHTR” in tape & reel form.
Caution:
Do not place the SNAPHAT battery package “M4Zxx-BR00SH” in conductive foam as it will
drain the lithium button-cell battery.
For other options, or for more information on any aspect of this device, please contact the
ST sales office nearest you.
®
Table 13. SNAPHAT battery table
Part number
Description
Package
M4Z28-BR00SH1
M4Z32-BR00SH1
Lithium battery (48mAh) SNAPHAT
Lithium battery (120mAh) SNAPHAT
SH
SH
23/25
Revision history
M40Z300, M40Z300W
7
Revision history
Table 14. Document revision history
Date
Revision
Changes
Mar-1999
1.0
First Issue
Document Layout changed; SO16 package added; Battery Capacity
changed (Table 13)
08-Mar-2000
1.1
22-Sep-2000
23-Feb-2001
30-May-2001
1.2
1.3
1.4
SO16 package measures change
Added information for Industrial Temperature (Table 3, 7, 12)
Change “Controller” references to “SUPERVISOR”
Reformatted; added temp/voltage info. to tables (Table 6, 7); Figures
changed (Figure 1, 3, 5, 8, 6)
10-Jul-2001
01-Aug-2001
15-Jan-2002
2.0
2.1
2.2
E2 connections added to Hookup (Figure 5)
16-pin SOIC Connections split, graphic added (Figure 4); addition to
hardware hookup (Figure 5)
13-May-2002
31-Oct-2003
04-Nov-2003
23-Feb-2005
2.3
2.4
2.5
3.0
Modify reflow time and temperature footnote (Table 3)
Update DC Characteristics (Table 6)
Correct DC Characteristics (Table 6)
Reformatted; IR reflow, SO package updates (Table 3)
Reformatted; added lead-free second level interconnect to cover
page and Section 5: Package mechanical data; updated Figure 10
and Table 3, 12, 13.
05-Nov-2007
4.0
24/25
M40Z300, M40Z300W
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