![](http://pdffile.icpdf.com/pdf_file_D/20230711/pdf_img/pdf10/INFINEON/S6E2C38L0AGL_datasheet_383936/S6E2C38L0AGL_datasheet_ic_pdf_1.jpg)
![](http://pdffile.icpdf.com/pdf_file_D/20230711/pdf_img/pdf10/INFINEON/S6E2C38L0AGL_datasheet_383936/S6E2C38L0AGL_datasheet_ic_pdf_2.jpg)
S6E2CC9H0AGV2000A
FM4 S6E2C High Performance Arm® Cortex®-M4 Microcontroller (MCU) Family
微控制器
INFINEON
![](http://pdffile.icpdf.com/pdf_file_D/20220411/pdf_img/pdf8/NANYA/NT6TL256T32B_datasheet_9088179/NT6TL256T32B_datasheet_ic_pdf_1.jpg)
![](http://pdffile.icpdf.com/pdf_file_D/20220411/pdf_img/pdf8/NANYA/NT6TL256T32B_datasheet_9088179/NT6TL256T32B_datasheet_ic_pdf_2.jpg)
NT6TL256T32BA-G0IE
Commercial and Industrial Mobile LPDDR2 4Gb / 8Gb(DDP) SDRAM
动态存储器 双倍数据速率 光电二极管
NANYA
![](http://pdffile.icpdf.com/pdf_file_D/20230721/pdf_img/pdf10/INFINEON/2ED1322S12M_datasheet_623365/2ED1322S12M_datasheet_ic_pdf_1.jpg)
![](http://pdffile.icpdf.com/pdf_file_D/20230721/pdf_img/pdf10/INFINEON/2ED1322S12M_datasheet_623365/2ED1322S12M_datasheet_ic_pdf_2.jpg)
2ED1322S12M
EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.
驱动 双极性晶体管
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