ESDA18-1F2 [STMICROELECTRONICS]

Transient Voltage Suppressor; 瞬态电压抑制器
ESDA18-1F2
型号: ESDA18-1F2
厂家: ST    ST
描述:

Transient Voltage Suppressor
瞬态电压抑制器

文件: 总7页 (文件大小:91K)
中文:  中文翻译
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ESDA18-1F2  
®
ASD  
(Application Specific Devices)  
TRANSIL™: Transient Voltage Suppressor  
FEATURES AND BENEFITS:  
Stand-off voltage 16V  
Unidirectional device  
Low clamping factor VCL/VBR  
Fast response time  
Very thin package: 0.65 mm  
Flip-Chip  
(4 Bumps)  
DESCRIPTION  
The ESDA18-1F2 is a single line Transil diode  
designed specifically for the protection of  
integrated circuits into portable equipment and  
miniaturized electronics devices subject to ESD &  
EOS transient overvoltages.  
Table 1: Order Code  
Part Number  
Marking  
ESDA18-1F2  
EE  
COMPLIES WITH THE FOLLOWING STANDARDS:  
IEC61000-4-2  
Figure 1: Pin Configuration (ball side)  
Level 4  
15kV (air discharge)  
8kV (contact discharge)  
A
B
1
2
K
K
A
A
K
A
TM: TRANSIL is a trademark of STMicroelectronics.  
May 2005  
REV. 1  
1/7  
ESDA18-1F2  
Table 2: Absolute Ratings (limiting value, per diode)  
Symbol  
Parameter and test conditions  
Value  
Unit  
Peak pulse power dissipation  
10 / 1000 µs pulse  
100  
PPP  
Tj initial = Tamb  
W
Peak pulse power dissipation  
8 / 20 µs pulse  
700  
8
tp=10 ms  
IFSM  
Non repetitive surge peak forward current  
A
Tj initial = Tamb  
Tj  
Maximum operating junction temperature  
Storage temperature range  
125  
°C  
°C  
Tstg  
- 65 to + 175  
Table 3: Electrical Characteristics (Tamb = 25°C)  
Symbol  
Parameter  
Breakdown voltage  
I
IF  
VBR  
IRM  
VRM  
VCL  
Rd  
Leakage current  
Stand-off voltage  
Clamping voltage  
Dynamic impedance  
Peak pulse current  
Capacitance  
VF  
V
CLVBR VRM  
V
IRM  
IPP  
C
Slope: 1/Rd  
IPP  
(1)  
(2)  
IR  
VBR  
IRM  
VRM  
VCL  
IPP  
VF  
αT  
C
min.  
max.  
max.  
max.  
max.  
max.  
typ.  
Part Number  
IF = 850mA  
VR=0V  
10-4/°C  
8.5  
V
V
mA  
1
µA  
V
V
A
1
V
pF  
ESDA18-1F2  
(1) 8 / 20 µs pulse waveform.  
16  
18  
0.5  
10  
20  
1.3  
230  
(2) DC current not recommended for more than 5 sec. Even if Transil failure mode is short circuit the bumps could exceed melting temper-  
ature and the component disassembled from the board.  
2/7  
ESDA18-1F2  
Figure 2: Relative variation of peak pulse  
power versus initial junction temperature  
Figure 3: Peak pulse power versus exponen-  
tial pulse duration  
P
[T initial] / P [T initial=25°C)  
j PP j  
P (W)  
PP  
PP  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
10000  
1000  
100  
Tj initial=25°C  
T (°C)  
j
t (µs)  
p
10  
0
25  
50  
75  
100  
125  
150  
1
10  
100  
1000  
Figure 4: Clamping voltage versus peak pulse  
current (typical values, exponential waveform)  
Figure 5: Forward voltage drop versus peak  
forward current (typical values)  
I
(A)  
I
(A)  
FM  
PP  
100.0  
10.0  
1.0  
1.E+01  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
8/20µs  
Tj initial=25°C  
Tj=125°C  
Tj=25°C  
V
(V)  
CL  
V
(V)  
FM  
0.1  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
Figure 6: Junction capacitance versus reverse  
voltage applied (typical values)  
Figure 7: Relative variation of leakage current  
versus junction temperature (typical values)  
C(pF)  
I [T ] / I [T =25°C]  
R j R j  
300  
100  
10  
1
VR=10V  
F=1MHz  
VOSC=30mVRMS  
Tj=25°C  
250  
200  
150  
100  
50  
V (V)  
R
T (°C)  
j
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16  
25  
50  
75  
100  
125  
3/7  
ESDA18-1F2  
One major point is that the ESDA18-1F2 has to ensure the safety during reverse battery operation. Indeed,  
during this operation the device must clamp the DC reverse voltage below 1.3V @ 0.85A (max current).  
Thus reverse battery operation has been simulated by inverting the polatrity of the TRANSIL (please see  
figures 8 and 9)  
Figure 8: Reverse battery operation setup  
Equivalent  
mobile phone  
impedance  
PTC  
I
V
mains  
4.7k  
1nF  
V
ESDA18-1F2  
Figure 9: Reverse battery operation results  
A short calculation based on Reverse battery operation results figures clearly show that in such real phone  
application the ESDA18-1F2 clamp the DC voltage below 1.3V.  
Typically the ESDA18-1F2 can clamp the DC voltage @ 0.9V @0.76A DC current:  
2 × Vmax  
2 × 1.4  
---------------------- -----------------  
VDC  
=
0.9V  
Π
3.14  
2 × Imax  
2 × 1.2  
-------------------- -----------------  
IDC  
=
0.76A  
Π
3.14  
4/7  
ESDA18-1F2  
Figure 10: Ordering Information Scheme  
ESD Array  
ESDA 18 - 1 Fx  
Breakdown Voltage  
18 = 18 Volts max.  
Number of line  
1 = signle line  
Package  
F = Flip-Chip  
x = 2: Leadfree Pitch = 500µm, Bump = 315µm  
Figure 11: FLIP-CHIP Package Mechanical Data  
650µm 65  
500µm 50  
315µm 50  
0.95mm 50µm  
Figure 12: Foot Print Recommendations  
Figure 13: Marking  
365  
240  
Dot, ST logo  
xx = marking  
z = packaging location  
yww = datecode  
(y = year  
Copper pad Diameter :  
250µm recommended , 300µm max  
E
ww = week)  
Solder stencil opening : 330µm  
x x z  
Solder mask opening recommendation :  
340µm min for 315µm copper pad diameter  
y
w w  
All dimensions in µm  
5/7  
ESDA18-1F2  
Figure 14: FLIP-CHIP Tape and Reel Specification  
Dot identifying Pin A1 location  
Ø 1.5 +/- 0.1  
4 +/- 0.1  
ST  
ST  
ST  
0.73 +/- 0.05  
4 +/- 0.1  
User direction of unreeling  
All dimensions in mm  
Table 4: Ordering Information  
Ordering code  
Marking  
Package  
Weight  
Base qty  
5000  
Delivery mode  
ESDA18-1F2  
EE  
Flip-Chip  
1.25 mg  
Tape & reel 7”  
Note: More packing informations are available in the application note  
AN1235: “Flip-Chip: Package description and recommendations for use”  
Table 5: Revision History  
Date  
Revision  
Description of Changes  
09-May-2005  
1
First issue.  
6/7  
ESDA18-1F2  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2005 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
7/7  

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