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BYT230Y-400 [STMICROELECTRONICS]

FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管
BYT230Y-400
型号： BYT230Y-400
厂家： ST    ST
描述：

FAST RECOVERY RECTIFIER DIODES
快恢复整流二极管

整流二极管 快速恢复二极管
文件： 总5页 (文件大小：63K)
中文：  中文翻译
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BYT230Y-400  
FAST RECOVERY RECTIFIER DIODES  
PRELIMINARY DATASHHET  
MAIN PRODUCT CHARACTERISTICS  
IF(AV) 2 x 30 A  
VRRM  
A1  
K
A2  
400 V  
150°C  
1.3 V  
Tj (max)  
VF (max)  
FEATURES AND BENEFITS  
VERY LOW REVERSE RECOVERY TIME  
VERY LOW SWITCHING LOSSES  
LOW NOISE TURN-OFF SWITCHING  
A2  
K
A1  
Max247  
DESCRIPTION  
Dual 400V rectifiers suited for Switch Mode Power  
Suppliesand other converters.  
Packaged in Max247, this device is also intended  
for use in welding equipment and telecom power  
supplies.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
Unit  
VRRM  
IFRM  
IF(RMS)  
IF(AV)  
400  
V
Repetitive peak reverse voltage  
380  
50  
A
A
A
Repetitive peak forward current  
RMS forward current  
tp=5 µs F=5kHz  
30  
Average forward current  
Tc = 105°C Per diode  
δ = 0.5  
60  
Per device  
IFSM  
Tstg  
Tj  
300  
A
Surge non repetitiveforward current  
Storagetemperature range  
tp = 10 ms Sinusoidal  
- 55 to + 150  
150  
°C  
°C  
Maximum operating junction temperature  
October 1999 - Ed: 3A  
1/5  
BYT230Y-400  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth (j-c)  
Rth(c)  
When the diodes 1 and 2 are used simultaneously:  
0.95  
0.55  
°C/W  
Junction to case  
Per diode  
Total  
0.15  
°C/W  
Coupling  
∆ Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS (per diode)  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max.  
Unit  
IR *  
35  
µA  
Reverse leakage  
current  
Tj = 25°C  
Tj = 125°C  
VR = VRRM  
3
12  
1.5  
1.3  
1.7  
1.6  
mA  
V
VF **  
Forward voltage drop Tj = 25°C  
Tj = 125°C  
IF = 30 A  
IF = 30 A  
IF = 60 A  
IF = 60 A  
0.9  
1.1  
Tj = 25°C  
Tj = 125°C  
Pulse test : * tp = 5 ms, < 2%  
δ
** tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation:  
2
P = 1.0 x IF(AV) + 0.01 IF (RMS)  
RECOVERY CHARACTERISTICS  
Symbol  
Test Conditions  
Min.  
Typ. Max. Unit  
trr  
50  
ns  
Tj = 25°C  
IF = 0.5A IR = 1A Irr = 0.25A  
IF = 1A VR = 30V dIF/dt = - 15A/µs  
100  
TURN-OFF SWITCHING CHARACTERISTICS (without serie inductance)  
Symbol  
Test Conditions  
Min.  
Typ. Max. Unit  
tIRM  
75  
ns  
dIF/dt = - 120A/µs  
dIF/dt = - 240A/µs  
dIF/dt = - 120A/µs  
dIF/dt = - 240A/µs  
VCC = 200 V  
IF = 30A  
Lp = 0.05µH  
Tj = 100°C  
50  
12  
IRM  
9
A
TURN-OFF OVERVOLTAGE CORFFICIENT (withserie inductance)  
Symbol  
Test Conditions  
VCC = 60V IF = IF (AV)  
Lp = 1µH  
Min.  
Typ.  
3.3  
Max.  
Unit  
/
Tj = 100°C  
dIF/dt = - 30A/µs  
VRP  
C =  
VCC  
2/5  
BYT230Y-400  
Fig. 1: Average forward power dissipation versus  
average forward current (per diode).  
Fig. 2: Peakcurrent versusform factor(per diode).  
IM(A)  
250  
PF(av)(W)  
T
P=40W  
60  
δ = 0.5  
δ = 0.2  
200  
δ = 0.1  
=tp/T  
tp  
50  
40  
30  
20  
10  
0
δ
δ = 0.05  
δ = 1  
150  
100  
50  
P=60W  
P=80W  
P=20W  
T
0
tp  
=tp/T  
δ
IF(av) (A)  
20  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
0
5
10  
15  
25  
30  
35  
40  
Fig. 3: Average forward current versus ambient  
temperature(δ=0.5, perdiode).  
Fig. 4: Non repetitive surge peak forward current  
versusoverloadduration( per diode).  
IF(av)(A)  
35  
IM(A)  
250  
Rth(j-a)=Rth(j-c)  
30  
200  
25  
20  
150  
Tc=50°C  
Rth(j-a)=5°C/W  
15  
100  
Tc=75°C  
10  
T
IM  
50  
0
Tc=110°C  
t
5
δ=0.5  
t(s)  
=tp/T  
δ
tp  
Tamb(°C)  
0
1E-3  
1E-2  
1E-1  
1E+0  
0
25  
50  
75  
100  
125  
150  
Fig. 6:  
Forward voltage drop versus forward  
Fig. 5: Relative variation of thermal impedance  
junction to case versus pulse duration (per diode).  
current (maximum values, per diode).  
IFM(A)  
K=[Zth(j-c)/Rth(j-c)]  
200.0  
1.0  
100.0  
Typicalvalues  
Tj=125°C  
δ = 0.5  
10.0  
Tj=25°C  
δ = 0.2  
δ = 0.1  
Tj=125°C  
T
1.0  
Single pulse  
=tp/T  
tp  
δ
tp(s)  
VFM(V)  
0.1  
1E-3  
0.1  
1E-2  
1E-1  
1E+0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3/5  
BYT230Y-400  
Fig. 7:  
Fig. 8:  
Recoverychargesversus dIF/dt (perdiode).  
Junction capacitance versus reverse  
voltage applied (typical values, per diode).  
C(pF)  
Qrr(nC)  
1000  
100  
10  
100  
IF=IF(av)  
90% confidence  
Tj=100°C  
F=1MHz  
Tj=25°C  
50  
20  
dIF/dt(A/µs)  
VR(V)  
10  
10  
20  
50  
100  
200  
500  
1
10  
100  
200  
Fig. 9:  
Fig. 10:  
diode).  
Recoverycurrentversus dIF/dt (perdiode).  
Transient peak forward versus dIF/dt (per  
IRM(A)  
VFP(V)  
30  
50  
10  
IF=IF(av)  
90% confidence  
Tj=100°C  
IF=IF(av)  
90% confidence  
Tj=100°C  
25  
20  
15  
10  
5
dIF/dt(A/µs)  
dIF/dt(A/µs)  
0
1
0
100  
200  
300  
400  
500  
10  
20  
50  
100  
200  
500  
Fig. 11:  
diode).  
Fig. 12:  
temperature.  
Forward recovery time versus dIF/dt (per  
Dynamic parameters versus junction  
tfr(µs)  
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
IF=IF(av)  
90% confidence  
Tj=100°C  
IRM  
Qrr  
dIF/dt(A/µs)  
Tj(°C)  
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
4/5  
BYT230Y-400  
PACKAGE MECHANICAL DATA  
Max247  
DIMENSIONS  
Millimeters Inches  
Min. Max.  
4.70 5.30  
REF.  
Min.  
Max.  
E
A
A
A1  
b
0.185  
0.087  
0.038  
0.079  
0.118  
0.016  
0.776  
0.211  
0.602  
0.559  
0.146  
0.209  
0.102  
0.055  
0.094  
0.133  
0.031  
0.799  
0.219  
0.626  
0.598  
0.169  
2.20  
1.00  
2.60  
1.40  
b1  
b2  
c
2.00  
2.40  
D
3.00  
3.40  
0.40  
0.80  
L1  
D
19.70  
5.35  
10.30  
5.55  
A1  
e
b1  
L
E
15.30  
14.20  
3.70  
15.90  
15.20  
4.30  
b2  
L
L1  
e
c
b
Orderingtype  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
BYT230Y-400 BYT230Y-400  
Epoxy meets UL94,V0  
Max247  
5 g.  
30  
Tube  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1999 STMicroelectronics - Printed inItaly - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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