BYT231PIV-1000 [STMICROELECTRONICS]

FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管
BYT231PIV-1000
型号: BYT231PIV-1000
厂家: ST    ST
描述:

FAST RECOVERY RECTIFIER DIODES
快恢复整流二极管

整流二极管 测试 局域网 快速恢复二极管
文件: 总5页 (文件大小:77K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYT230PIV-1000  
BYT231PIV-1000  
FAST RECOVERY RECTIFIER DIODES  
K2  
A2  
A2  
K1  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 30 A  
1000 V  
1.8 V  
K1  
A1  
K2  
A1  
VF (max)  
trr (max)  
BYT231PIV-1000  
BYT230PIV-1000  
80 ns  
FEATURES AND BENEFITS  
VERY LOW REVERSE RECOVERY TIME  
VERY LOW SWITCHING LOSSES  
LOW NOISE TURN-OFF SWITCHING  
INSULATEDPACKAGE: ISOTOP  
Insulationvoltage: 2500 VRMS  
Capacitance= 45 pF  
ISOTOPTM  
(Plastic)  
Inductance< 5 nH  
DESCRIPTION  
Dual high voltage rectifier devices are suited for  
free-wheeling function in converters and motor  
control circuits.  
Packaged in ISOTOP,they are intended for use in  
Switch Mode Power Supplies.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
Unit  
VRRM  
IFRM  
IF(RMS)  
IF(AV)  
1000  
V
Repetitivepeak reverse voltage  
700  
50  
A
A
A
Repetitivepeak forward current  
RMS forward current  
tp=5 µs F=1kHz  
30  
Average forward current  
Tc = 55°C  
δ = 0.5  
IFSM  
Tstg  
Tj  
200  
- 40 to + 150  
150  
A
Surge non repetitiveforward current  
Storage temperaturerange  
tp = 10 ms Sinusoidal  
°C  
°C  
Maximum operating junction temperature  
TM: ISOTOP is a registeredtrademark of STMicroelectronics.  
October 1999 - Ed: 3B  
1/5  
BYT230PIV-1000 / BYT231PIV-1000  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth(j-c)  
1.5  
0.8  
°C/W  
Junction to case  
Per diode  
Total  
Rth(c)  
0.1  
Coupling  
When the diodes 1 and 2 are used simultaneously:  
Tj(diode1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS  
(per diode)  
Test Conditions  
Symbol  
Parameter  
Min. Typ. Max.  
Unit  
VF *  
1.9  
V
Forward voltage drop Tj = 25°C  
Tj = 100°C  
IF = 30 A  
1.8  
100  
5
IR **  
µA  
Reverse leakage  
current  
Tj = 25°C  
VR = VRRM  
mA  
Tj = 100°C  
Pulse test : * tp = 380 s, < 2%  
µ
δ
** tp = 5 ms, δ < 2%  
To evaluate the conduction losses use the following equation:  
2
P = 1.47 x IF(AV) + 0.010 IF (RMS)  
RECOVERY CHARACTERISTICS (per diode)  
Symbol  
Test Conditions  
Min.  
Typ. Max. Unit  
trr  
165  
80  
ns  
Tj = 25°C  
IF = 1A VR = 30V dIF/dt = - 15A/µs  
IF = 0.5A IR = 1A Irr = 0.25A  
TURN-OFF SWITCHING CHARACTERISTICS (per diode)  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Unit  
tIRM  
200 ns  
Maximum reverse  
recovery time  
dIF/dt = - 120 A/µs  
dIF/dt = - 240 A/µs  
dIF/dt = - 120 A/µs  
dIF/dt = - 240 A/µs  
VCC = 200 V  
IF = 30 A  
Lp 0.05 µH  
Tj = 100°C  
(see fig. 11)  
120  
IRM  
19.5  
4.5  
A
/
Maximum reverse  
recovery current  
22  
Turn-off overvoltage  
coefficient  
Tj = 100°C VCC = 200V  
dIF/dt = - 30A/µs  
(see fig. 12)  
IF = IF(AV)  
Lp = 5µH  
VRP  
C =  
VCC  
2/5  
BYT230PIV-1000 / BYT231PIV-1000  
Fig. 1: Low frequency power losses versus  
average current.  
Fig. 2: Peakcurrent versus form factor.  
P
F(av)(W)  
70  
=1  
=0.2  
=0.5  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
=0.1  
=0.05  
T
I
=tp/T  
tp  
F(av)(A)  
0
0
5
10  
15  
20  
25  
30  
35  
Fig. 3: Non repetitive peak surge current versus  
overload duration.  
Fig. 4: Relative variation of thermal impedance  
junction to case versus pulse duration.  
Fig. 5: Voltage drop versus forward current.  
Fig. 6: Recoverycharge versus diF/dt.  
3/5  
BYT230PIV-1000 / BYT231PIV-1000  
Fig. 7: Recoverytime versus dIF/dt.  
Fig. 8: Peakreverse current versus dIF/dt.  
Fig. 9: Peakforward voltage versus dIF/dt.  
Fig. 10: Dynamic parameters versus junction  
temperature.  
Fig. 12: Turn-off switching characteristics (with  
serie inductance).  
Fig. 11: Turn-off switching characteristics (without  
serie inductance).  
IF  
IF  
DUT  
DUT  
diF/dt  
diF/dt  
LC  
LC  
LP  
VCC  
VCC  
VF  
VF  
VCC  
VRP  
IRM  
VCC  
tIRM  
4/5  
BYT230PIV-1000 / BYT231PIV-1000  
DIMENSIONS  
PACKAGE MECHANICAL DATA  
ISOTOP  
REF.  
Millimeters  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
B
C
C2  
D
D1  
E
E1  
E2  
G
G1  
G2  
F
F1  
P
11.80  
8.90  
7.8  
0.75  
1.95  
37.80  
31.50  
25.15  
23.85  
12.20  
9.10  
8.20  
0.85  
2.05  
38.20  
31.70  
25.50  
24.15  
0.465  
0.350  
0.307  
0.030  
0.077  
1.488  
1.240  
0.990  
0.939  
0.480  
0.358  
0.323  
0.033  
0.081  
1.504  
1.248  
1.004  
0.951  
24.80 typ.  
0.976 typ.  
14.90  
12.60  
3.50  
4.10  
4.60  
4.00  
4.00  
30.10  
15.10  
12.80  
4.30  
4.30  
5.00  
4.30  
4.40  
30.30  
0.587  
0.496  
0.138  
0.161  
0.181  
0.157  
0.157  
1.185  
0.594  
0.504  
0.169  
0.169  
0.197  
0.69  
P1  
S
0.173  
1.193  
Delivery  
mode  
Orderingtype  
Marking  
Package  
Weight  
Base qty  
BYT230PIV-1000 BYT230PIV-1000 ISOTOP  
BYT231PIV-1000 BYT231PIV-1000 ISOTOP  
Cooling method: by conduction(C)  
28 g. (without screws)  
28 g. (without screws)  
10  
10  
Tube  
Tube  
Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-  
mended for mounting the package on the heatsink and the 4 screws given with the screw version).The  
screwssupplied with the packageare adapted for mounting on a board (or other types of terminals) with  
a thicknessof 0.6 mm min and2.2 mm max.  
Epoxymeets UL94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1999 STMicroelectronics - Printed inItaly - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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