BYT231PIV-1000 [STMICROELECTRONICS]
FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管![BYT231PIV-1000](http://pdffile.icpdf.com/pdf1/p00027/img/icpdf/BYT231_143372_icpdf.jpg)
型号: | BYT231PIV-1000 |
厂家: | ![]() |
描述: | FAST RECOVERY RECTIFIER DIODES |
文件: | 总5页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BYT230PIV-1000
BYT231PIV-1000
FAST RECOVERY RECTIFIER DIODES
K2
A2
A2
K1
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 30 A
1000 V
1.8 V
K1
A1
K2
A1
VF (max)
trr (max)
BYT231PIV-1000
BYT230PIV-1000
80 ns
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATEDPACKAGE: ISOTOP
Insulationvoltage: 2500 VRMS
Capacitance= 45 pF
ISOTOPTM
(Plastic)
Inductance< 5 nH
DESCRIPTION
Dual high voltage rectifier devices are suited for
free-wheeling function in converters and motor
control circuits.
Packaged in ISOTOP,they are intended for use in
Switch Mode Power Supplies.
ABSOLUTE RATINGS
Symbol
(limiting values, per diode)
Parameter
Value
Unit
VRRM
IFRM
IF(RMS)
IF(AV)
1000
V
Repetitivepeak reverse voltage
700
50
A
A
A
Repetitivepeak forward current
RMS forward current
tp=5 µs F=1kHz
30
Average forward current
Tc = 55°C
δ = 0.5
IFSM
Tstg
Tj
200
- 40 to + 150
150
A
Surge non repetitiveforward current
Storage temperaturerange
tp = 10 ms Sinusoidal
°C
°C
Maximum operating junction temperature
TM: ISOTOP is a registeredtrademark of STMicroelectronics.
October 1999 - Ed: 3B
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BYT230PIV-1000 / BYT231PIV-1000
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
1.5
0.8
°C/W
Junction to case
Per diode
Total
Rth(c)
0.1
Coupling
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Test Conditions
Symbol
Parameter
Min. Typ. Max.
Unit
VF *
1.9
V
Forward voltage drop Tj = 25°C
Tj = 100°C
IF = 30 A
1.8
100
5
IR **
µA
Reverse leakage
current
Tj = 25°C
VR = VRRM
mA
Tj = 100°C
Pulse test : * tp = 380 s, < 2%
µ
δ
** tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation:
2
P = 1.47 x IF(AV) + 0.010 IF (RMS)
RECOVERY CHARACTERISTICS (per diode)
Symbol
Test Conditions
Min.
Typ. Max. Unit
trr
165
80
ns
Tj = 25°C
IF = 1A VR = 30V dIF/dt = - 15A/µs
IF = 0.5A IR = 1A Irr = 0.25A
TURN-OFF SWITCHING CHARACTERISTICS (per diode)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tIRM
200 ns
Maximum reverse
recovery time
dIF/dt = - 120 A/µs
dIF/dt = - 240 A/µs
dIF/dt = - 120 A/µs
dIF/dt = - 240 A/µs
VCC = 200 V
IF = 30 A
Lp ≤ 0.05 µH
Tj = 100°C
(see fig. 11)
120
IRM
19.5
4.5
A
/
Maximum reverse
recovery current
22
Turn-off overvoltage
coefficient
Tj = 100°C VCC = 200V
dIF/dt = - 30A/µs
(see fig. 12)
IF = IF(AV)
Lp = 5µH
VRP
C =
VCC
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BYT230PIV-1000 / BYT231PIV-1000
Fig. 1: Low frequency power losses versus
average current.
Fig. 2: Peakcurrent versus form factor.
P
F(av)(W)
70
=1
=0.2
=0.5
65
60
55
50
45
40
35
30
25
20
15
10
5
=0.1
=0.05
T
I
=tp/T
tp
F(av)(A)
0
0
5
10
15
20
25
30
35
Fig. 3: Non repetitive peak surge current versus
overload duration.
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5: Voltage drop versus forward current.
Fig. 6: Recoverycharge versus diF/dt.
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BYT230PIV-1000 / BYT231PIV-1000
Fig. 7: Recoverytime versus dIF/dt.
Fig. 8: Peakreverse current versus dIF/dt.
Fig. 9: Peakforward voltage versus dIF/dt.
Fig. 10: Dynamic parameters versus junction
temperature.
Fig. 12: Turn-off switching characteristics (with
serie inductance).
Fig. 11: Turn-off switching characteristics (without
serie inductance).
IF
IF
DUT
DUT
diF/dt
diF/dt
LC
LC
LP
VCC
VCC
VF
VF
VCC
VRP
IRM
VCC
tIRM
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BYT230PIV-1000 / BYT231PIV-1000
DIMENSIONS
PACKAGE MECHANICAL DATA
ISOTOP
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
11.80
8.90
7.8
0.75
1.95
37.80
31.50
25.15
23.85
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
24.15
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
24.80 typ.
0.976 typ.
14.90
12.60
3.50
4.10
4.60
4.00
4.00
30.10
15.10
12.80
4.30
4.30
5.00
4.30
4.40
30.30
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.594
0.504
0.169
0.169
0.197
0.69
P1
S
0.173
1.193
Delivery
mode
Orderingtype
Marking
Package
Weight
Base qty
BYT230PIV-1000 BYT230PIV-1000 ISOTOP
BYT231PIV-1000 BYT231PIV-1000 ISOTOP
Cooling method: by conduction(C)
28 g. (without screws)
28 g. (without screws)
10
10
Tube
Tube
Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-
mended for mounting the package on the heatsink and the 4 screws given with the screw version).The
screwssupplied with the packageare adapted for mounting on a board (or other types of terminals) with
a thicknessof 0.6 mm min and2.2 mm max.
Epoxymeets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed inItaly - All rights reserved.
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