BTB24B [STMICROELECTRONICS]
STANDARD TRIACS; 标准双向可控硅
| 型号： | BTB24B |
| 厂家： | 
ST |
| 描述： | STANDARD TRIACS |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
BTB24 B
STANDARD TRIACS
FEATURES
HIGH SURGE CURRENT CAPABILITY
.
µ
COMMUTATION : (dV/dt)c > 10V/ s
.
DESCRIPTION
A1
A2
The BTB24 B triac family are high performance
glass passivated PNPN devices.
G
These parts are suitables for general purpose ap-
plications where high surge current capability is re-
quired. Application such as phase control and
static switching on inductive or resistive load.
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(360° conduction angle)
Tc = 90 °C
25
A
T(RMS)
I
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
260
250
312
50
A
TSM
2
I t
2
2
A s
I t value
dI/dt
Critical rate of rise of on-state current
Repetitive
A/µs
Gate supply : I = 2 . I
tr ≤ 100ns
F = 100 Hz
G
GT
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
Symbol
Parameter
BTB24-... B
600 700
600 700
Unit
400
800
V
V
Repetitive peak off-state voltage
400
800
V
DRM
RRM
Tj = 125 °C
October 1998 - Ed: 2A
1/4
BTB24 B
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
°C/W
Rth (j-a)
Junction to ambient
Rth (j-c) DC Junction to case for DC
1.5
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
1.1
GATE CHARACTERISTICS (maximum values)
P
= 1W
P
= 10W (tp = 20 µs)
I
= 4A (tp = 20 µs)
V = 16V (tp = 20 µs).
GM
G (AV)
GM
GM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
V =12V (DC) R =33Ω
Quadrant
Suffix
Unit
I
Tj=25°C
I-II-III-IV
I-II-III
IV
MIN
MAX
MAX
MAX
MIN
5
mA
GT
D
L
50
100
1.3
0.2
70
V
V =12V (DC) R =33Ω
Tj=25°C
Tj=125°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-III-IV
II
V
V
GT
GD
D
L
V
V =V R =3.3kΩ
DRM L
D
I
L
I =1.2 I
G
MAX
mA
GT
150
50
I
*
I = 500mA gate open
T
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
MAX
MAX
MAX
MAX
MIN
mA
V
H
V
TM
*
I
= 35A tp= 380µs
TM
1.6
5
I
I
V
DRM
V
RRM
Rated
Rated
µA
DRM
RRM
2
mA
V/µs
dV/dt *
Linear slope up to V =67%V
D
gate open
750
DRM
(dV/dt)c * (dI/dt)c = 11.1A/ms
Tj=125°C
MIN
10
V/µs
* For either polarity of electrode A voltage with reference to electrode A .
2
1
Fig. 1: Maximum power dissipation versus RMS
Fig. 2: Correlation between maximum power dissipation
on-state current.
and maximum allowable temperatures (T
and
amb
T
) for different thermal resistances heatsink +
case
contact.
P(W)
Tcase (°C)
P(W)
35
35
α = 180°
30
Rth=3°C/W
90
30
25
20
15
10
5
Rth=2°C/W
Rth=0°C/W
Rth=1°C/W
α = 120°
25
100
110
20
α = 90°
15
α = 60°
10
180°
α
α = 180°
α = 30°
120
125
α
5
Tamb(°C)
IT(rms)(A)
0
0
0
20
40
60
80
100
120
140
0
5
10
15
20
25
2/4
BTB24 B
Fig. 3: RMS on-state current versus case temperature.
Fig. 4: Relative variation of thermal impedance versus
pulse duration.
IT(rms)(A)
K=[Zth/Rth]
30
1.00
α = 180°
25
20
15
10
Zth(j-c)
Zth(j-a)
0.10
5
tp(s)
Tcase(°C)
0.01
0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
25
50
75
100
125
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature (typical
values).
Fig. 6: Non Repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj] / IGT,IH[Tj=25°C]
ITSM(A)
2.5
220
Tj initial=25°C
F=50Hz
200
IGT
180
160
140
120
100
80
2.0
1.5
IH
1.0
60
40
0.5
20
0
Tj(°C)
Number of cycles
10 100
0.0
1
1000
-40 -20
0
20
40
60
80 100 120 140
Fig. 7: Non repetitive surge peak on-state current for a
Fig. 8: On-state characteristics (maximum values).
sinusoidal pulse with width
corresponding value of I t.
:
t
≤
10ms, and
2
ITM(A)
300
ITSM(A),I²t(A²s)
1000
Tj initial=25°C
Tj=25°C
100
ITSM
Tj=Tj max.
500
I²t
10
200
100
Tj max.:
Vto=0.95V
tp(ms)
Rt=19mΩ
VTM(V)
1
1
2
5
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
3/4
BTB24 B
PACKAGE MECHANICAL DATA
TO220AB Plastic
C
B
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
14.23 15.87 0.560 0.625
4.50 0.177
b2
I
L
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
L
I1
l2
l3
F
12.70 14.70 0.500 0.579
10.20 10.45 0.402 0.411
A
l1
0.64
1.15
4.48
0.35
2.10
2.29
5.85
3.55
2.54
1.30
1.45
0.80
0.96 0.025 0.038
1.39 0.045 0.055
4.82 0.176 0.190
0.65 0.020 0.026
2.70 0.083 0.106
2.79 0.090 0.110
6.85 0.230 0.270
4.00 0.140 0.157
3.00 0.100 0.118
0.051
a1
l3
l2
b1
a2
b1
c1
c2
1.75 0.057 0.069
1.20 0.031 0.047
e
e
Cooling method : C
Marking : type number
Weight : 2.25 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces
all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
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