BTB24BW [STMICROELECTRONICS]
600V, 25A, SNUBBERLESS TRIAC, TO-220AB, PLASTIC, TO-220AB, 3 PIN;![BTB24BW](http://pdffile.icpdf.com/pdf2/p00306/img/icpdf/BTB24BW_1846766_icpdf.jpg)
型号: | BTB24BW |
厂家: | ![]() |
描述: | 600V, 25A, SNUBBERLESS TRIAC, TO-220AB, PLASTIC, TO-220AB, 3 PIN 局域网 三端双向交流开关 |
文件: | 总5页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BTA24BW/CW
BTB24BW/CW
®
SNUBBERLESS TRIACS
FEATURES
HIGH COMMUTATION : (dI/dt)c > 22A/ms
without snubber
.
HIGH SURGE CURRENT : I
= 250A
.
.
.
TSM
V
DRM
UP TO 800V
BTA family:
Insulated voltage = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
G
The BTA/BTB24 BW/CW triac family are high per-
formance glass passivated chips technology.
The SNUBBERLESS concept offers suppression
of RC network and it is suitable for application
such as phase control and static switching on in-
ductive or resistive load.
A2
A1
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
25
Unit
A
I
RMS on-state current
(360° conduction angle)
BTA
BTB
Tc = 75 °C
Tc = 95 °C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
T(RMS)
25
A
I
Non repetitive surge peak on-state current
260
250
312
20
A
TSM
( Tj initial = 25°C )
2
I t
2
2
A s
I t value
dI/dt
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
A/µs
Gate supply : I = 500mA di /dt = 1A/µs
G
G
Non
100
Repetitive
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
Symbol
Parameter
BTA/BTB24-... BW/CW
Unit
600
700
800
V
V
Repetitive peak off-state voltage
Tj = 125 °C
600
700
800
V
DRM
RRM
1/5
August 1998 Ed : 2A
BTA/BTB24 BW/CW
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
Rth (j-a)
Junction to ambient
Rth (j-c) DC Junction to case for DC
BTA
BTB
BTA
BTB
2.3
1.3
Rth (j-c) AC Junction to case for 360° conduction angle
1.7
( F= 50 Hz)
1.0
GATE CHARACTERISTICS (maximum values)
P
= 1W
P
= 10W (tp = 20 µs)
I
= 4A (tp = 20 µs).
G (AV)
GM
GM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
BW
4
CW
2
I
V =12V (DC) R =33Ω
Tj=25°C
I-II-III
MIN
MAX
MAX
MIN
mA
GT
D
L
50
35
V
V =12V (DC) R =33Ω
Tj=25°C
Tj=125°C
Tj=25°C
I-II-III
I-II-III
I-III
1.3
0.2
V
V
GT
D
L
V
V =V R =3.3kΩ
D DRM L
GD
I
L
I =1.2 I
G GT
MAX
MAX
MAX
MAX
MAX
MAX
MIN
60
120
75
50
80
50
mA
II
I
*
I = 250mA gate open
T
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
mA
V
H
V
*
I
= 35A tp= 380µs
TM
1.5
5
TM
I
I
V
DRM
V
RRM
Rated
Rated
µA
DRM
RRM
3
mA
V/µs
dV/dt *
Linear slope up to V =67%V
D
gate open
1000
22
500
13
DRM
(dI/dt)c *
Without snubber
Tj=125°C
MIN
A/ms
* For either polarity of electrode A voltage with reference to electrode A .
2
1
2/5
BTA/BTB24 BW/CW
ORDERING INFORMATION
Package
I
V
/ V
RRM
Sensitivity Specification
T(RMS)
A
DRM
V
BW
X
CW
X
BTA
25
600
700
800
600
700
800
(Insulated)
X
X
X
X
BTB
25
X
X
(Uninsulated)
X
X
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current.
P(W)
30
α
25
α
20
α
15
α
10
180°
α
α
5
0
α
I
T(RMS)(A)
0
5
10
15
20
25
Fig.3 : Correlation between maximum power dissipation
Fig.2 : Correlation between maximum power dissipation
and maximum allowable temperatures (T
and
and maximum allowable temperatures (T
and
amb
amb
T
) for different thermal resistances heatsink +
case
T
) for different thermal resistances heatsink +
case
contact.(BTB)
contact. (BTA)
Tcase (°C)
P(W)
30
Tcase (°C)
P(W)
30
95
75
Rth=0°C/W
Rth=0°C/W
25
25
100
105
110
115
120
125
Rth=3°C/W
85
Rth=3°C/W
20
20
Rth=2°C/W
95
Rth=2°C/W
15
10
5
15
Rth=1°C/W
105
10
Rth=1°C/W
115
125
5
α
Tamb(°C)
Tamb(°C)
α
0
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
3/5
BTA/BTB24 BW/CW
Fig.4 : RMS on-state current versus case temperature.
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
IT(rms)(A)
K=[Zth/Rth]
30
1.00
25
α
Zth(j-c)
20
BTB
Zth(j-a)
15
0.10
BTA
10
5
tp(s)
Tcase(°C)
0.01
0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
25
50
75
100
125
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature (typical
values).
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
I
GT,IH[Tj]/IG,IH[Tj=25°C]
I
TSM(A)
2.5
2.0
1.5
1.0
0.5
0.0
220
200
180
160
140
120
100
80
60
40
20
0
Tj initial=25°C
F=50Hz
I
GT
I
H
Tj(°C)
40
Number of cycles
10 100
-40 -20
0
20
60
80 100 120 140
1
1000
Fig.8 : Non repetitive surge peak on-state current for a
Fig.9 : On-state characteristics (maximum values).
sinusoidal pulse with width
corresponding value of I t.
:
tp
≤
10ms, and
2
I
TM(A)
I
TSM(A)
,
I²t(A²s)
300
100
1000
500
Tj initial=25°C
I
TSM
Tj max.:
Tj=Tj max.
Vto=0.85V
Rt=16mΩ
I²t
10
Tj=25°C
200
100
tp(ms)
V
TM(V)
1
1
2
5
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
4/5
BTA/BTB24 BW/CW
DIMENSIONS
PACKAGE MECHANICAL DATA
TO220AB Plastic
B
REF.
C
b2
Millimeters
Min. Max.
15.20 15.90 0.598 0.625
3.50 4.20 0.137 0.165
Inches
Min. Max.
A
a1
a2
B
L
F
I
13.00 14.00 0.511 0.551
10.00 10.40 0.393 0.409
A
b1
b2
C
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
0.024 0.034
0.048 0.051
0.173 0.181
0.019 0.027
0.094 0.107
0.094 0.106
0.244 0.259
0.147 0.151
0.646 Typ.
l4
c1
c2
e
c2
a1
l3
F
l2
I
a2
I4
L
16.40 Typ.
2.65
1.14
1.14
2.95
1.70
1.70
0.104 0.116
0.044 0.066
0.044 0.066
0.102 Typ.
l2
l3
M
b1
M
c1
2.60 Typ.
e
Cooling method : C
Marking : type number
Weight : 2.1 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and re-
places all information previously supplied. STMicroelectronics products are not authorized for use as critical components
in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
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