BTB24BW [STMICROELECTRONICS]

600V, 25A, SNUBBERLESS TRIAC, TO-220AB, PLASTIC, TO-220AB, 3 PIN;
BTB24BW
型号: BTB24BW
厂家: ST    ST
描述:

600V, 25A, SNUBBERLESS TRIAC, TO-220AB, PLASTIC, TO-220AB, 3 PIN

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BTA24BW/CW  
BTB24BW/CW  
®
SNUBBERLESS TRIACS  
FEATURES  
HIGH COMMUTATION : (dI/dt)c > 22A/ms  
without snubber  
.
HIGH SURGE CURRENT : I  
= 250A  
.
.
.
TSM  
V
DRM  
UP TO 800V  
BTA family:  
Insulated voltage = 2500V  
(RMS)  
(UL RECOGNIZED : E81734)  
DESCRIPTION  
G
The BTA/BTB24 BW/CW triac family are high per-  
formance glass passivated chips technology.  
The SNUBBERLESS concept offers suppression  
of RC network and it is suitable for application  
such as phase control and static switching on in-  
ductive or resistive load.  
A2  
A1  
TO220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
25  
Unit  
A
I
RMS on-state current  
(360° conduction angle)  
BTA  
BTB  
Tc = 75 °C  
Tc = 95 °C  
tp = 8.3 ms  
tp = 10 ms  
tp = 10 ms  
T(RMS)  
25  
A
I
Non repetitive surge peak on-state current  
260  
250  
312  
20  
A
TSM  
( Tj initial = 25°C )  
2
I t  
2
2
A s  
I t value  
dI/dt  
Critical rate of rise of on-state current  
Repetitive  
F = 50 Hz  
A/µs  
Gate supply : I = 500mA di /dt = 1A/µs  
G
G
Non  
100  
Repetitive  
Tstg  
Tj  
Storage and operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
°C  
Tl  
Maximum lead temperature for soldering during 10 s at 4.5 mm  
from case  
260  
°C  
Symbol  
Parameter  
BTA/BTB24-... BW/CW  
Unit  
600  
700  
800  
V
V
Repetitive peak off-state voltage  
Tj = 125 °C  
600  
700  
800  
V
DRM  
RRM  
1/5  
August 1998 Ed : 2A  
BTA/BTB24 BW/CW  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Rth (j-a)  
Junction to ambient  
Rth (j-c) DC Junction to case for DC  
BTA  
BTB  
BTA  
BTB  
2.3  
1.3  
Rth (j-c) AC Junction to case for 360° conduction angle  
1.7  
( F= 50 Hz)  
1.0  
GATE CHARACTERISTICS (maximum values)  
P
= 1W  
P
= 10W (tp = 20 µs)  
I
= 4A (tp = 20 µs).  
G (AV)  
GM  
GM  
ELECTRICAL CHARACTERISTICS  
Symbol  
Test Conditions  
Quadrant  
Suffix  
Unit  
BW  
4
CW  
2
I
V =12V (DC) R =33Ω  
Tj=25°C  
I-II-III  
MIN  
MAX  
MAX  
MIN  
mA  
GT  
D
L
50  
35  
V
V =12V (DC) R =33Ω  
Tj=25°C  
Tj=125°C  
Tj=25°C  
I-II-III  
I-II-III  
I-III  
1.3  
0.2  
V
V
GT  
D
L
V
V =V R =3.3kΩ  
D DRM L  
GD  
I
L
I =1.2 I  
G GT  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MIN  
60  
120  
75  
50  
80  
50  
mA  
II  
I
*
I = 250mA gate open  
T
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=125°C  
Tj=125°C  
mA  
V
H
V
*
I
= 35A tp= 380µs  
TM  
1.5  
5
TM  
I
I
V
DRM  
V
RRM  
Rated  
Rated  
µA  
DRM  
RRM  
3
mA  
V/µs  
dV/dt *  
Linear slope up to V =67%V  
D
gate open  
1000  
22  
500  
13  
DRM  
(dI/dt)c *  
Without snubber  
Tj=125°C  
MIN  
A/ms  
* For either polarity of electrode A voltage with reference to electrode A .  
2
1
2/5  
BTA/BTB24 BW/CW  
ORDERING INFORMATION  
Package  
I
V
/ V  
RRM  
Sensitivity Specification  
T(RMS)  
A
DRM  
V
BW  
X
CW  
X
BTA  
25  
600  
700  
800  
600  
700  
800  
(Insulated)  
X
X
X
X
BTB  
25  
X
X
(Uninsulated)  
X
X
X
X
Fig.1 : Maximum RMS power dissipation versus RMS  
on-state current.  
P(W)  
30  
α
25  
α
20  
α
15  
α
10  
180°  
α
α
5
0
α
I
T(RMS)(A)  
0
5
10  
15  
20  
25  
Fig.3 : Correlation between maximum power dissipation  
Fig.2 : Correlation between maximum power dissipation  
and maximum allowable temperatures (T  
and  
and maximum allowable temperatures (T  
and  
amb  
amb  
T
) for different thermal resistances heatsink +  
case  
T
) for different thermal resistances heatsink +  
case  
contact.(BTB)  
contact. (BTA)  
Tcase (°C)  
P(W)  
30  
Tcase (°C)  
P(W)  
30  
95  
75  
Rth=0°C/W  
Rth=0°C/W  
25  
25  
100  
105  
110  
115  
120  
125  
Rth=3°C/W  
85  
Rth=3°C/W  
20  
20  
Rth=2°C/W  
95  
Rth=2°C/W  
15  
10  
5
15  
Rth=1°C/W  
105  
10  
Rth=1°C/W  
115  
125  
5
α
Tamb(°C)  
Tamb(°C)  
α
0
0
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
140  
3/5  
BTA/BTB24 BW/CW  
Fig.4 : RMS on-state current versus case temperature.  
Fig.5 : Relative variation of thermal impedance versus  
pulse duration.  
IT(rms)(A)  
K=[Zth/Rth]  
30  
1.00  
25  
α
Zth(j-c)  
20  
BTB  
Zth(j-a)  
15  
0.10  
BTA  
10  
5
tp(s)  
Tcase(°C)  
0.01  
0
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
25  
50  
75  
100  
125  
Fig.6 : Relative variation of gate trigger current and  
holding current versus junction temperature (typical  
values).  
Fig.7 : Non Repetitive surge peak on-state current  
versus number of cycles.  
I
GT,IH[Tj]/IG,IH[Tj=25°C]  
I
TSM(A)  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
220  
200  
180  
160  
140  
120  
100  
80  
60  
40  
20  
0
Tj initial=25°C  
F=50Hz  
I
GT  
I
H
Tj(°C)  
40  
Number of cycles  
10 100  
-40 -20  
0
20  
60  
80 100 120 140  
1
1000  
Fig.8 : Non repetitive surge peak on-state current for a  
Fig.9 : On-state characteristics (maximum values).  
sinusoidal pulse with width  
corresponding value of I t.  
:
tp  
10ms, and  
2
I
TM(A)  
I
TSM(A)  
,
I²t(A²s)  
300  
100  
1000  
500  
Tj initial=25°C  
I
TSM  
Tj max.:  
Tj=Tj max.  
Vto=0.85V  
Rt=16mΩ  
I²t  
10  
Tj=25°C  
200  
100  
tp(ms)  
V
TM(V)  
1
1
2
5
10  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
4/5  
BTA/BTB24 BW/CW  
DIMENSIONS  
PACKAGE MECHANICAL DATA  
TO220AB Plastic  
B
REF.  
C
b2  
Millimeters  
Min. Max.  
15.20 15.90 0.598 0.625  
3.50 4.20 0.137 0.165  
Inches  
Min. Max.  
A
a1  
a2  
B
L
F
I
13.00 14.00 0.511 0.551  
10.00 10.40 0.393 0.409  
A
b1  
b2  
C
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.85  
0.024 0.034  
0.048 0.051  
0.173 0.181  
0.019 0.027  
0.094 0.107  
0.094 0.106  
0.244 0.259  
0.147 0.151  
0.646 Typ.  
l4  
c1  
c2  
e
c2  
a1  
l3  
F
l2  
I
a2  
I4  
L
16.40 Typ.  
2.65  
1.14  
1.14  
2.95  
1.70  
1.70  
0.104 0.116  
0.044 0.066  
0.044 0.066  
0.102 Typ.  
l2  
l3  
M
b1  
M
c1  
2.60 Typ.  
e
Cooling method : C  
Marking : type number  
Weight : 2.1 g  
Recommended torque value : 0.8 m.N.  
Maximum torque value : 1 m.N.  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for  
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectron-  
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and re-  
places all information previously supplied. STMicroelectronics products are not authorized for use as critical components  
in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
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The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
5/5  

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