B100NF04 [STMICROELECTRONICS]
N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET; N沟道40V - 0.0043ohm - 120A - TO- 220 - D2PAK的STripFET TM II功率MOSFET
| 型号： | B100NF04 |
| 厂家： | 
ST |
| 描述： | N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET |
| 文件： | 总17页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP100NF04
STB100NF04
N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK
STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
Pw
STP100NF04
STB100NF04
40V
40V
< 0.0046Ω 120A 300W
< 0.0046Ω 120A 300W
■ Standard threshold drive
■ 100% avalanche tested
3
3
2
1
1
TO-220
D²PAK
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB100NF04
STP100NF04
B100NF04
P100NF04
D²PAK
Tape & Reel
Tube
TO-220
February 2007
Rev5
1/17
www.st.com
17
Contents:
STB100NF04 - STP100NF04
Contents:
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Spice Thermal Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STB100NF04 - STP100NF04
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
Drain-source Voltage (VGS=0)
VDS
VGS
40
20
V
V
Gate-source Voltage
(1)
ID
Drain-current (continuous) at Tc=25°C
Drain-current (continuous) at Tc=100°C
Drain-current (pulsed)
120
120
480
300
2
A
(1)
ID
A
(2)
IDM
A
PTOT
Total dissipation at Tc=25°C
W
Derating factor
W/°C
V/ns
J
dv/dt(3) Peak Diode Recovery voltage slope
6
(4)
EAS
Single Pulse Avalanche Energy
1.2
Tj
Operating Junction Temperature
Storage Temperature
-55 to 175
°C
Tstg
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD ≤120A, di/dt ≤300A/µs, VDD < V(BR)DSS. Tj < Tjmax
4. Starting Tj=25°C, ID=60A, VDD=30V
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal Resistance Junction-case Max
Rthj-pcb Thermal Resistance Junction-pcb Max
Rthj-amb Thermal Resistance Junction-ambient (Free Air) Max
Tl
0.5
(see Figure 13)
62.5
°C/W
°C/W
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
300
3/17
Electrical characteristics
STB100NF04 - STP100NF04
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off
Parameter
Test conditions
ID=250µA, VGS=0
Min. Typ.
Max. Unit
Drain-sourceBreakdown
Voltage
V(BR)DSS
40
V
V
DS=Max Rating
DS=Max Rating Tc=125°C
1
µA
µA
Zero Gate Voltage Drain
Current (VGS=0)
IDSS
V
10
Gate-body Leakage
Current (VDS=0)
VGS= 20V
DS=VGS, ID=250µA
VGS=10V, ID=50A
IGSS
100
4
nA
V
V
VGS(th)
RDS(on)
Gate Threshold Voltage
2
Static Drain-source On
Resistance
0.0043 0.0046
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min Typ.
Max. Unit
Forward Transconductance
VDS=15V, ID=50A
150
S
gfs
Ciss
Coss
Crss
Input Capacitance
5100
1300
160
pF
pF
pF
VDS=25V, f=1MHz,VGS=0
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
110
35
150
nC
nC
nC
V
DD=32V, ID=120A
VGS=10V
70
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise time
35
220
80
ns
ns
ns
ns
VDD=20V, ID=60A
RG=4.7Ω, VGS=10V
(see Figure 21)
Turn-off delay Time
Fall Time
50
4/17
STB100NF04 - STP100NF04
Electrical characteristics
Min. Typ. Max. Unit
Table 5.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain Current
120
480
A
A
(1)
ISDM
Source-drain Current (pulsed)
(2)
VSD
Forward on Voltage
ISD=120A, VGS=0
1.3
V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse recovery Current
75
185
5
ns
nC
A
ISD=120A, VDD=20V,
di/dt=100A/µs, Tj=150°C
Qrr
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/17
Electrical characteristics
STB100NF04 - STP100NF04
2.1
Electrical characteristics (curves)
Figure 1. Power Derating vs. Tc
Figure 2. Max Id Current vs. Tc
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
Figure 5. Transconductance
Figure 6. Static Drain-source on Resistance
6/17
STB100NF04 - STP100NF04
Electrical characteristics
Figure 7. Gate Charge vs. Gate-source
Voltage
Figure 8. Capacitance Variations
Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs.
vs. Temperature
Temperature
Figure 11. Source-Drain Diode Forward
Characteristics
Figure 12. Normalized BVdss vs. Temperature
7/17
Electrical characteristics
STB100NF04 - STP100NF04
Figure 13. Thermal Resistance Rthj-pcb vs.
PCB Copper Area
Figure 14. Thermal Impedance
Figure 15. Max Power Dissipation vs. PCB
Copper Area
Figure 16. Safe Operating Area
8/17
STB100NF04 - STP100NF04
Figure 17. Allowable Iav vs. Time in Avalanche
Electrical characteristics
The previous curve give the safe operating area for unclamped inductive loads, single pulse
or repetitive, under the following conditions:
P
E
= 0.5*(1.3*BV
*I
)
D(AVE)
AS(AR)
DSS AV
= P
* t
D(AVE) AV
Where:
is the Allowable Current in Avalanche
I
AV
P
is the Average Power Dissipation in Avalanche (Single Pulse)
D(AVE)
t
is the Time in Avalanche
AV
To de rate above 25°C, at fixed I , the following equation must be applied:
AV
I
=2*(T
- T
) / (1.3*BV
* Z )
DSS th
AV
jmax
CASE
Where:
Z = K*R is the value coming from Normalized Thermal Response at fixed pulse width
th
th
equal to T
AV
9/17
Electrical characteristics
STB100NF04 - STP100NF04
2.2
Spice thermal model
Table 6.
Spice parameter
Parameter
Node
Value
CTHERM1
CTHERM1
CTHERM3
CTHERM4
5 - 4
4 - 3
3 - 2
2 - 1
0.011
0.0012
0.05
0.1
RTHERM1
RTHERM2
RTHERM3
RTHERM4
5 - 4
4 - 3
3 - 2
2 - 1
0.09
0.02
0.11
0.17
Figure 18. Spice model schematic
10/17
STB100NF04 - STP100NF04
Test circuit
3
Test circuit
Figure 19. Unclamped inductive load test
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching times test circuit for
resistive load
Figure 22. Gate charge test circuit
Figure 23. Test circuit for inductive load
switching
Figure 24. Switching time waveform
11/17
Package mechanical data
STB100NF04 - STP100NF04
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
12/17
STB100NF04 - STP100NF04
Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
13/17
Package mechanical data
STB100NF04 - STP100NF04
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
14/17
STB100NF04 - STP100NF04
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
15/17
Revision history
STB100NF04 - STP100NF04
6
Revision history
Table 7.
Date
Revision history
Revision
Changes
23-Mar-2005
01-Mar-2006
04-Sep-2006
20-Feb-2007
2
3
4
5
New template
Removed I²PAK and inserted D²PAK.
New template, no content change
Typo mistake on page 1
16/17
STB100NF04 - STP100NF04
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