B100NH02L [STMICROELECTRONICS]
N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET; N沟道24V - 0.0052ohm - 60A D2PAK的STripFET TM III功率MOSFET
| 型号： | B100NH02L |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET |
| 文件： | 总13页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB100NH02L
N-channel 24V - 0.0052Ω - 60A - D2PAK
STripFET™ III Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB100NH02L
24V
<0.006Ω
60A(1)
1. Value limited by wire bonding
■ R
* Q industry’s benchmark
DS(ON)
g
3
1
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
D2PAK
Description
The STB100NH02L utilizes the latest advanced
design rules of ST’s proprietary STripFET™
technology. This is suitable fot the most
demanding DC-DC converter applications where
high efficiency is to be achieved.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB100NH02LT4
B100NH02L
D2PAK
Tape & reel
June 2006
Rev 4
1/13
www.st.com
13
Contents
STB100NH02L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB100NH02L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
(1)
Vspike
Drain-source voltage rating
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate- source voltage
30
24
24
20
V
V
V
V
VDS
VDGR
VGS
Drain current (continuous) at
TC = 25°C
(2)
ID
60
60
A
A
Drain current (continuous) at
TC = 100°C
(2)
ID
(3)
IDM
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
240
100
0.67
600
A
W
Ptot
W/°C
mJ
(4)
EAS
Single pulse avalanche energy
Storage temperature
Tstg
Tj
-55 to 175
°C
Max. operating junction
temperature
1. Garanted when external Rg=4.7Ω and tf < tfmax.
2. Value limited by wire bonding
3. Pulse width limited by safe operating area.
4. Starting Tj = 25 °C, ID = 30A, VDD = 15V
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
1.5
62.5
300
°C/W
°C/W
°C
TJ
Maximum lead temperature for soldering purpose
3/13
Electrical characteristics
STB100NH02L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
V(BR)DSS
ID = 25mA, VGS =0
24
V
breakdown voltage
Zero gate voltage
V
DS = 20V
1
µA
µA
IDSS
drain current (VGS = 0)
VDS = 20V, TC = 125°C
10
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
20V
100
nA
V
VGS(th)
RDS(on)
Gate threshold voltage
VDS = VGS, ID = 250µA
1
1.8
VGS = 10V, ID = 30A
VGS = 5V, ID = 15A
0.0052 0.006
Ω
Ω
Static drain-source on
resistance
0.007
0.011
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
gfs
VDS = 10V , ID = 30A
40
S
Input capacitance
Output capacitance
Ciss
Coss
Crss
2850
800
pF
pF
pF
VDS = 15V, f = 1MHz,
VGS = 0
Reverse transfer
capacitance
120
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
13
75
50
18
ns
ns
ns
ns
VDD = 10V, ID = 30A
RG = 4.7Ω VGS = 10V
(see Figure 13)
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 10V, ID = 30A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
47.5
10
7
64
nC
nC
nC
f=1 MHz gate DC
Bias=0
RG
Gate input resistance
1
Ω
test signal level =20 mV
open drain
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/13
STB100NH02L
Electrical characteristics
Table 5.
Source drain diode
Parameter
Symbol
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
ISD
60
A
A
Source-drain current
(pulsed)
(1)
ISDM
240
(2)
VSD
Forward on voltage
ISD = 30A, VGS = 0
1.3
V
trr
Reverse recovery time
ISD = 60A, di/dt = 100A/µs,
35
35
2
ns
nC
A
Qrr
Reverse recovery charge VDD = 16V, Tj = 150°C
IRRM
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/13
Electrical characteristics
STB100NH02L
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/13
STB100NH02L
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized B
vs temperature
VDSS
7/13
Test circuit
STB100NH02L
3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/13
STB100NH02L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB100NH02L
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
10/13
STB100NH02L
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/13
Revision history
STB100NH02L
6
Revision history
Table 6.
Date
Document revision history
Revision
Changes
21-Jun-2006
12-Jun-2006
3
4
Preliminary document
New template
12/13
STB100NH02L
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