STP3481 [STANSON]
P Channel Enhancement Mode MOSFET; P沟道增强型MOSFET
| 型号： | STP3481 |
| 厂家： | 
STANSON TECHNOLOGY |
| 描述： | P Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
The STP3481 is the P-Channel logic enhancement mode power field effect transistors
are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
TSOP-6P
z
z
z
z
z
-30V/-5.2A, RDS(ON) = 55m-ohm
@VGS = -10V
-30V/-4.2A, RDS(ON) = 75m-ohm
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
TSOP-6P package design
1.2.5.6.Drain 3.Gate 4.Source
PART MARKING
TSOP-6P
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STP3481S6RG
TSOP-6P
81YA
※ Process Code : A ~ Z ; a ~ z
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
※ STP3481S6RG
S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
Unit
V
-30
±
20
V
TA=25℃
-5.2
-4.2
℃
Continuous Drain CurrentTJ=150 )
A
℃
TA=70
Pulsed Drain Current
IDM
-20
A
Continuous Source Current (Diode Conduction)
IS
-1.7
A
TA=25℃
2.0
1.3
Power Dissipation
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
90
TSTG
℃
/W
Rθ
Thermal Resistance-Junction to Ambient
JA
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
-30
V
V
Gate Threshold Voltage
VDS=VGS,ID=-250uA -1.0
-3.0
±
±
VDS=0V,VGS= 20V
100
-1
Gate Leakage Current
Na
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
UA
-10
℃
TJ=55
≦-
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
ID(on)
RDS(on)
gfs
VDS 5V,VGS=-10V
-10
A
VGS=-10.0V,ID=-5.2A
VGS=-4.5V,ID=-4.2A
0.041 0.055
0.058 0.075
Ω
VDS=-5.0V,ID=-4.0A
IS=-1.0A,VGS=0V
10
S
V
VSD
-0.8 -1.2
Dynamic
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Qgd
14
1.9
3.7
21
VDS=-15V
VGS=-10V
ID -4.0A
nC
pF
≣
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
540
131
VDS=-15V
VGS=0V
F=1MHz
Crss
105
10
16
VDD=-15V
td(on)
Turn-On Time
Turn-Off Time
Ω
RL=15
tr
15
32
21
25
50
32
ID=-1.0A
VGEN=-10V
nS
td(off)
tf
Ω
RG=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
℃
TYPICAL CHARACTERICTICS (25 Unless noted)
4
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
℃
TYPICAL CHARACTERICTICS (25 Unless noted)
5
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
TSOP-6P PACKAGE OUTLINE
6
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
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