SSR05C60GTX [SSDI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon Carbide, HERMETIC SEALED, CERPACK-2;
| 型号： | SSR05C60GTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon Carbide, HERMETIC SEALED, CERPACK-2 |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSR05C60 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
5 AMP / 600V
SILICON CARBIDE
SCHOTTKY RECTIFIER
SSR05C __ __ __
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening: __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Features:
Package: D1 = TO-252 (D-Pack)
G = Cerpack
600V Silicon Carbide Schottky Rectifier
New Semiconductor Material
Switching Behavior Benchmark
No Reverse Recovery
S.5 = SMD.5
S.22 = SMD.22
No Forward Recovery
No Switching Time Change Over Temperature
Hermetic Packages Available
Voltage 50 = 500 V
60 = 600 V
Maximum Ratings
Symbol
Value
Units
Volts
Peak Repetitive Reverse and
Peak Surge Reverse Voltage
SSR05C50
SSR05C60
VRRM
VRSM
500
600
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Io
5
Amps
Amps
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave)
IFSM
20
I2t Value
I2t
PD
0.78
36.5
A2s
Watts
°C
Power Dissipation
Operating & Storage Temperature
Top & Tstg
-55 to +175
Maximum Thermal Resistance
Junction to Case
4.1
°C/W
RJC
1
TO-252 (D1)
Cerpack (G)
SMD.5 (S.5)
SMD.22 (S.22)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0016H
DOC
SSR05C60 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol Min
Typ
1.7
2.0
15
Max Units
Instantaneous Forward Voltage Drop
(IF = 5A, TJ = 25°C, 300 sec pulse)
Instantaneous Forward Voltage Drop
(IF = 5A, TJ = 150°C, 300 sec pulse)
Reverse Leakage Current
(VR = Rated VR, TJ = 25°C, 300 sec pulse min)
Reverse Leakage Current
(VR = Rated VR, TJ = 100°C, 300 sec pulse min)
Junction Capacitance
(VR =10 VDC, TC = 25°C, f = 1MHz)
Total Capacitive Charge
(VR = 400V, IF = 5A, di/dt = 200A/s, TJ = 150°C)
––
––
––
––
––
––
VF1
VF2
IR1
2.0
2.7
200
1000
––
Volts
Volts
A
IR2
40
A
CJ
50
pF
––
QC
13
nC
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ For Package Outlines Contact Factory.
o
3/ All Electrical Characteristics @25 C Unless Otherwise Specified.
PIN ASSIGNMENT
Available Part Numbers:
SSR05C50D1 SSR05C50G SSR05C50S.5
SSR05C50S.22
SSR05C60D1 SSR05C60G SSR05C60S.5
SSR05C60S.22
Package
Pin 1
N/C
Pin 2
Cathode
Anode
Anode
Anode
Pin 3
Anode
N/A
Tab
Cathode
Cathode
N/A
TO-252 (D1)
Cerpack (G)
SMD.5 (S.5)
Anode
Cathode
Cathode
Anode
Anode
SMD.22 (S.22)
N/A
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0016H
DOC
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