SSR05C60S.5HR [SSDI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon Carbide, HERMETIC SEALED, SMD0.5, 3 PIN;
| 型号： | SSR05C60S.5HR |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon Carbide, HERMETIC SEALED, SMD0.5, 3 PIN 二极管 |
| 文件： | 总3页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSR05C60
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
5 AMP
600 VOLTS
SILICON CARBIDE
SCHOTTKY RECTIFIER
DESIGNER'S DATA SHEET
1/
Part Number /Ordering Information
SSR05C 60 D1 HR
Screening: _ = Not Screened
HR = High Rel
Package: D1 = TO-252 (D-Pack)
FEATURES:
• 600V Silicon Carbide Schottky Rectifier
• New Semiconductor Material
• Switching Behavior Benchmark
• No Reverse Recovery
2/
G
= Cerpack
S.5 = SMD .5
Voltage: 50 = 500V
60 = 600V
• No Forward Recovery
• No Switching Time Change over Temperature
• Hermetic Packages Available
Maximum Ratings 3/
SYMBOL
VALUE
UNITS
Volts
Peak Repetitive Reverse and
Peak Surge Reverse Voltage
V
RRM
SSR05C50
SSR05C60
500
600
V
RSM
Average Rectified Forward Current.
(Resistive load, 60Hz, Sine Wave)
Io
5
Amps
Amps
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io)
I
12.5
FSM
I2t Value
I2t
0.78
36.5
A2s
W
Power Dissipation
Pd
Operating and Storage Temperature
TOP & Tstg
-55 TO +175
oC
Maximum Thermal Resistance
Junction to Case
R
2JC
4.1
oC/W
TO-252 (D1)
Cerpack (G)
SMD.5 (S.5)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0016B
SSR05C60
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SYMBOL
MIN
TYP
MAX
UNITS
Electrical Characteristics
Instantaneous Forward Voltage Drop
V
--
1.7
1.9
VDC
F1
F4
(I = 5A, T = 25oC, 300µsec Pulse )
F
J
Instantaneous Forward Voltage Drop
V
--
--
--
--
--
2.0
15
40
50
13
2.4
200
1000
-
VDC
µA
µA
pF
(I = 5A, T = 150oC, 300µsec pulse )
F
J
Reverse Leakage Current
I
I
R1
(V = Rated V , T = 25oC, 300µs pulse min.)
R
R
J
Reverse Leakage Current
R2
(V = Rated V , T = 100oC, 300µs pulse min.)
R
R
J
Junction Capacitance
C
J
(V = 10V , T = 25oC, f = 1MHz)
R
DC
C
Total Capasitive Charge
Q
-
nC
C
(V = 400V, I = 5A, di/dt = 200A/µs, T = 150oC)
R
F
J
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ For Package Outlines Contact Factory.
3/ All Electrical Characteristics @25oC, Unless Otherwise Specified.
Available Part Numbers:
PIN ASSIGNMENT
SCR05S50D1 SCR05S50G SCR05S50S.5
SCR05S60D1 SCR05S60G SCR05S60S.5
PACKAGE
Pin 1
N/C
Pin 2
Cathode
Anode
Anode
Pin 3
Anode
N/A
Tab
TO-252 (D1)
CERPACK (G)
SMD.5 (S.5)
Cathode
Cathode
N/A
Anode
Cathode
Anode
SSR05C60
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Power Dissipation
Typical Forward Characteristic
TC [C]
VF
Typical Reverse Current Characteristics
Typical Capacitance vs. Reverse Voltage
VR
VR
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